Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
123 words
A method of forming a photoresist pattern, comprising the steps of: forming a first layer, forming an anti-reflective layer of Si x O y N z having a thickness d with 15 nm≦d≦150 nm on said first layer, wherein X>0, Y>0 and Z>0, forming a photoresist layer on said anti-reflective layer, exposing said photoresist selectively by a monochromatic light having a wavelength of 150-450 nm to form exposed and non-exposed imagewise areas, developing said photoresist after said exposing and removing some of the imagewise areas to uncover the layer under the photoresist layer, said anti-reflective layer having a reflective refractive index n and absorption refractive index k with 1.78≦n≦3.0 and 0.1≦k≦1.15 so that standing wave effect in said photoresist during exposing is minimized.
Claim 2
Independent Claim
123 words
A method of forming a photoresist pattern, comprising the steps of: forming a first layer, forming an anti-reflective layer of Si x O y N z having a thickness d with 15 nm≦d≦150 nm on said first layer, wherein X>0, Y>0 and Z>0, forming a photoresist layer on said anti-reflective layer, exposing said photoresist selectively by a monochromatic light having a wavelength of 150-450 nm to form exposed and non-exposed imagewise areas, developing said photoresist after said exposing and removing some of the imagewise areas to uncover the layer under the photoresist layer, said anti-reflective layer having a reflective refractive index n and absorption refractive index k with 1.78≦n≦3.0 and 0.1≦k≦1.15 so that standing wave effect in said photoresist during exposing is minimized.
Claim 3
Dependent Claim
32 words
A method according to claim 1, which includes performing a step of forming a second layer between the step of forming the anti-reflective layer and the step of forming the photoresist layer.
Claim 4
Dependent Claim
15 words
A method according to claim 2, wherein said second layer is a silicon oxide layer.
Claim 5
Dependent Claim
46 words
A method of forming a photoresist pattern according to claim 1, wherein said first layer is selected from a group consisting of a refractory metal layer, a refractory metal silicide layer, a metal layer, a metal silicide layer, a metal alloy layer, and a silicon layer.
Claim 6
Dependent Claim
59 words
A method of forming a photoresist pattern according to claim 1, wherein said first layer is selected from a group consisting of a refractory metal layer and a refractory metal silicide layer, and said anti-reflective layer has a reflection refractive index n, an absorption refractive index k and a film thickness d, wherein 1.8≦n≦3.0; 0.5≦k≦0.9; and 15 nm≦d≦35 nm.
Claim 7
Dependent Claim
25 words
A method of forming a resist pattern according to claim 5, wherein said first layer is selected from a group consisting of W, Mo--Si, W--Si.
Claim 8
Dependent Claim
61 words
A method of forming a photoresist pattern according to claim 1, wherein said first layer is selected from a group consisting of a metal layer, a metal silicide layer, and a metal alloy layer, and said anti-reflective layer has a reflection refractive index n, an absorption refractive index k and a film thickness d, wherein 1.78≦n≦2.38; 0.55≦k≦1.15; and 20 nm≦d≦40 nm.
Claim 9
Dependent Claim
27 words
A method of forming a resist pattern according to claim 7, wherein said first layer is selected from a group consisting of Al, Al--Si, Al--Si--Cu and Cu.
Claim 10
Dependent Claim
46 words
A method of forming a photoresist pattern according to claim 1, wherein said first layer is a silicon layer, and said anti-reflective layer has a reflection refractive index n, an absorption refractive index k and a film thickness d, wherein 1.8≦n≦2.6; 0.1≦k≦0.8; and 20 nm≦d≦150 nm.
Claim 11
Dependent Claim
29 words
A method of forming a resist pattern according to claim 9, wherein said silicon is selected from a group consisting of single crystal silicon, polycrystalline silicon and amorphous silicon.