US5744399A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming low dielectric constant layers using fullerenes
Assignee: Bell Semiconductor LLC
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Filing: 1995-11-13
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Granted: 1998-04-28
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Expires: 2015-11-13
Abstract
Abstract A process for lowering the dielectric constant of a layer on a semiconductor wafer is described. The presence of the fullerene in the composite layer changes its dielectric constant. The process forms, on the wafer, a composite layer comprising matrix-forming material and a fullerene. The fullerene may be removed from the composite layer to leave an open porous layer. Removing the fullerene may be accomplished, for example, by contacting the composite layer with a liquid which is a solvent for the fullerene but not for the insulation material or by oxidizing the fullerene. The processes and insulation layers described are particularly useful for integrated circuits.
Inventors
- 👤 Michael D. Rostoker
- 👤 Nicholas F. Pasch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:09
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/6534; H10P14/6548; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/072; H10W20/074; H10W20/075; H10W20/40; H10W20/45; H10W20/46; H10P14/6342; H10P14/66; H10P14/665
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
51 words
A process for lowering the dielectric constant of an insulation layer on a semiconductor wafer which comprises:, a) forming on the wafer a composite layer comprising matrix-forming insulation material and a fullerene; and b) removing the fullerene from the composite layer to leave an open porous structure comprising the insulation material.
Claim 2
Dependent Claim
51 words
A process for lowering the dielectric constant of an insulation layer on a semiconductor wafer which comprises:, a) forming on the wafer a composite layer comprising matrix-forming insulation material and a fullerene; and b) removing the fullerene from the composite layer to leave an open porous structure comprising the insulation material.
Claim 3
Dependent Claim
54 words
A process of claim 1, wherein said step of removing the fullerene further comprises: a) contacting said composite layer with a liquid which is a solvent for the fullerene but not for the insulation material to form a solution of the liquid and the fullerene; and b) removing the solution from the composite layer.
Claim 4
Dependent Claim
33 words
A process of claim 2, wherein the composite layer is formed as a spin-on glass, the matrix-forming insulation material comprises silicon oxide and the fullerene is a C 60 fullerene or derivative thereof.
Claim 5
Dependent Claim
16 words
A process of claim 1, wherein said step of removing the fullerene comprises oxidizing the fullerene.
Claim 6
Dependent Claim
33 words
A process of claim 4, wherein the composite layer is formed as a spin-on glass, the matrix-forming insulation material comprises silicon oxide and the fullerene is a C 60 fullerene or derivative thereof.
Claim 7
Dependent Claim
33 words
A process of claim 1, wherein the composite layer is formed as a spin-on glass, the matrix-forming insulation material comprises silicon oxide and the fullerene is a C 60 fullerene or derivative thereof.
Claim 8
Dependent Claim
61 words
A process for forming a low dielectric constant layer on an integrated circuit structure which comprises: a) providing an integrated circuit structure, b) forming over the integrated circuit structure a composite layer comprising matrix-forming material and a fullerene, and c) removing the fullerene from the composite layer to leave a porous structure comprising the matrix-forming material on the integrated circuit structure.
Claim 9
Dependent Claim
61 words
A process for forming a low dielectric constant layer on an integrated circuit structure which comprises: a) providing an integrated circuit structure, b) forming over the integrated circuit structure a composite layer comprising matrix-forming material and a fullerene, and c) removing the fullerene from the composite layer to leave a porous structure comprising the matrix-forming material on the integrated circuit structure.
Claim 10
Dependent Claim
54 words
A process of claim 7, wherein said step of removing the fullerene further comprises: a) contacting said composite layer with a liquid which is a solvent for the fullerene but not for the matrix-forming material to form a solution of the liquid and the fullerene; and b) removing the solution from the composite layer.
Claim 11
Dependent Claim
32 words
A process of claim 8, wherein the composite layer is formed as a spin-on glass, the matrix-forming material comprises silicon oxide and the fullerene is a C 60 fullerene or derivative thereof.
Claim 12
Dependent Claim
16 words
A process of claim 7, wherein said step of removing the fullerene comprises oxidizing the fullerene.
Claim 13
Dependent Claim
32 words
A process of claim 10, wherein the composite layer is formed as a spin-on glass, the matrix-forming material comprises silicon oxide and the fullerene is a C 60 fullerene or derivative thereof.
Claim 14
Independent Claim
42 words
A method of forming a protective layer on an integrated circuit which comprises: a) providing an integrated circuit, b) forming on the integrated circuit a composite layer comprising matrix-forming material and a fullerene, and c) removing the fullerene from the composite layer.
Claim 15
Independent Claim
42 words
A method of forming a protective layer on an integrated circuit which comprises: a) providing an integrated circuit, b) forming on the integrated circuit a composite layer comprising matrix-forming material and a fullerene, and c) removing the fullerene from the composite layer.
Claim 16
Dependent Claim
94 words
A process for insulating an integrated circuit comprising the steps of; providing semiconductor substrate, forming at least one first insulation layer upon the semiconductor substrate, forming at least one conductive layer upon the first insulation layer, forming at least one second insulation layer upon the conductive laey and forming at least one metallization layer upon the second insulation layer, wherein at least one of the first or second insulation layer is a composite layer comprising matrix-forming insulation material and a fullerene, and removing the fullerene from the composite layer to form the insulation layer.
Claim 17
Dependent Claim
94 words
A process for insulating an integrated circuit comprising the steps of; providing semiconductor substrate, forming at least one first insulation layer upon the semiconductor substrate, forming at least one conductive layer upon the first insulation layer, forming at least one second insulation layer upon the conductive laey and forming at least one metallization layer upon the second insulation layer, wherein at least one of the first or second insulation layer is a composite layer comprising matrix-forming insulation material and a fullerene, and removing the fullerene from the composite layer to form the insulation layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-27 | 2001-10-27 | 2002-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-27 | 2005-10-27 | 2006-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-27 | 2009-10-27 | 2010-04-28 | $7700.00 | Window Closed / Lapsed |