US5883011A
Expired / Lapsed
US
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Method of removing an inorganic antireflective coating from a semiconductor substrate
Assignee: VLSL TECHNOLOGY Inc
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Filing: 1997-06-18
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Granted: 1999-03-16
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Expires: 2017-06-18
Abstract
Abstract A method of removing an inorganic antireflective coating from a semiconductor substrate and a method of forming an integrated circuit (IC) are provided. In the former method, a sacrificial layer is formed over a semiconductor substrate, the layer being selectively removable from the substrate and compatible with photolithography. An inorganic antireflective coating such as SiON is then formed over the sacrificial layer. Thereafter, the sacrificial layer is removed from the substrate to lift the coating off the substrate. Preferred materials for the sacrificial layer include TiN, tetraethyl orthosilicate-based silicon oxide, spin-on-glass (SOG) such as hydrogen silsesquioxane and methyl silsesquioxane, and porous polymeric materials. In the latter method, a patterned layer of photoresist material is formed over the anitreflective coating. The portions of the antireflective coating, the sacrificial layer, and the semiconductor substrate which are not covered by the patterned layer of photoresist material are then removed to define features of an IC. After the patterning of IC features, the sacrificial layer is removed from the IC features to lift the antireflective coating off such features. IC devices formed in accordance with these methods also are provided.
Inventors
- 👤 Xi-Wei Lin
- 👤 Satyendra Sethi
- 👤 Henry Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 09:12
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01326; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/71; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
62 words
A method of removing an inorganic antireflective coating from a semiconductor substrate, comprising: forming a sacrificial layer over a semiconductor substrate, said layer being selectively removable from said substrate and compatible with photolithography; forming an inorganic antireflective coating over said sacrificial layer; and removing said sacrificial layer from said substrate, wherein removal of said sacrificial layer lifts said coating off said substrate.
Claim 2
Independent Claim
62 words
A method of removing an inorganic antireflective coating from a semiconductor substrate, comprising: forming a sacrificial layer over a semiconductor substrate, said layer being selectively removable from said substrate and compatible with photolithography; forming an inorganic antireflective coating over said sacrificial layer; and removing said sacrificial layer from said substrate, wherein removal of said sacrificial layer lifts said coating off said substrate.
Claim 3
Dependent Claim
31 words
The method of claim 1, wherein the sacrificial layer is comprised of a material selected from the group consisting of TiN, tetraethyl orthosilicate-based silicon oxide, spin-on glass, and porous polymeric materials.
Claim 4
Dependent Claim
13 words
The method of claim 1, wherein the sacrificial layer consists essentially of TiN.
Claim 5
Dependent Claim
17 words
The method of claim 1, wherein the spin-on glass is comprised of hydrogen silsesquioxane or methyl silsesquioxane.
Claim 6
Dependent Claim
24 words
The method of claim 2, wherein the antireflective layer is comprised of a material selected from the group consisting of SiON, Ge, and SiC.
Claim 7
Dependent Claim
32 words
The method of claim 5, wherein the semiconductor substrate is a layer of polycrystalline or amorphous silicon, the sacrificial layer consists essentially of TiN, and the antireflective coating consists essentially of SiON.
Claim 8
Dependent Claim
15 words
The method of claim 1, wherein the method is used to manufacture an integrated circuit.
Claim 9
Independent Claim
102 words
A method of forming features of an integrated circuit, comprising: forming a sacrificial layer over a semiconductor substrate, said layer being selectively removable from said substrate and having properties compatible with photolithography; forming an inorganic anitreflective coating over said sacrificial layer; forming a patterned layer of photoresist material over said anitreflective coating; removing portions of said coating, said sacrificial layer, and said semiconductor substrate which are not covered by said patterned layer of photoresist material to define features of an integrated circuit; and removing said sacrificial layer from said features, wherein removal of said sacrificial layer lifts said coating off said features.
Claim 10
Independent Claim
102 words
A method of forming features of an integrated circuit, comprising: forming a sacrificial layer over a semiconductor substrate, said layer being selectively removable from said substrate and having properties compatible with photolithography; forming an inorganic anitreflective coating over said sacrificial layer; forming a patterned layer of photoresist material over said anitreflective coating; removing portions of said coating, said sacrificial layer, and said semiconductor substrate which are not covered by said patterned layer of photoresist material to define features of an integrated circuit; and removing said sacrificial layer from said features, wherein removal of said sacrificial layer lifts said coating off said features.
Claim 11
Dependent Claim
21 words
The method of claim 8, wherein the sacrificial layer is removed by a wet etchant which is subjected to ultrasonic agitation.
Claim 12
Dependent Claim
21 words
The method of claim 9, wherein the wet etchant simultaneously attacks the patterned layer of photoresist material and the sacrificial layer.
Claim 13
Dependent Claim
24 words
The method of claim 8, wherein, before the sacrificial layer is removed, the patterned layer of photoresist material is stripped from the antireflective coating.
Claim 14
Dependent Claim
30 words
The method of claim 8, wherein the sacrificial layer is comprised of a material selected from the group consisting of TiN, tetraethyl orthosilicate-based silicon oxide, spin-on-glass, and porous polymeric materials.
Claim 15
Dependent Claim
24 words
The method of claim 8, wherein the antireflective coating is comprised of a material selected from the group consisting of SiON, Ge, and SiC.
Claim 16
Dependent Claim
32 words
The method of claim 8, wherein the semiconductor substrate is a layer of polycrystalline or amorphous silicon, the sacrificial layer consists essentially of TiN, and the antireflective coating consists essentially of SiON.
Claim 17
Dependent Claim
15 words
The method of claim 8, wherein the method is used to manufacture an integrated circuit.
Claim 18
Independent Claim
53 words
A method of removing an inorganic antireflective coating from a semiconductor substrate, comprising: forming a sacrificial layer comprised of TiN over a semiconductor substrate; forming an inorganic antireflective coating over said sacrificial layer; and removing said sacrificial layer from said substrate, wherein removal of said sacrificial layer lifts said coating off said substrate.
Claim 19
Independent Claim
53 words
A method of removing an inorganic antireflective coating from a semiconductor substrate, comprising: forming a sacrificial layer comprised of TiN over a semiconductor substrate; forming an inorganic antireflective coating over said sacrificial layer; and removing said sacrificial layer from said substrate, wherein removal of said sacrificial layer lifts said coating off said substrate.
Claim 20
Dependent Claim
17 words
The method of claim 16, wherein the semiconductor substrate is a layer of polycrystalline or amorphous silicon.
Claim 21
Dependent Claim
24 words
The method of claim 17, wherein the antireflective coating is comprised of a material selected from the group consisting of SiON, Ge, and SiC.
Claim 22
Dependent Claim
13 words
The method of claim 18, wherein the sacrificial layer consists essentially of TiN.
Claim 23
Dependent Claim
13 words
The method of claim 19, wherein the antireflective coating consists essentially of SiON.
Claim 24
Dependent Claim
15 words
The method of claim 20, wherein the method is used to manufacture an integrated circuit.
References Cited (Backward Citations)
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