Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
158 words
A method for selectively depositing a plurality of metal layers on a substrate, comprising the steps of: (a) providing a substrate; (b) depositing at least one layer of blanket metal on a surface of the substrate; (c) building a lift-off stencil over the blanket metal, said lift-off stencil having selected open areas through which the blanket metal is exposed; (d) depositing at least one layer of redundant metal over the lift-off stencil and in the selected open areas; (e) depositing a first etch-resistant barrier over the redundant metal; (f) removing the lift-off stencil and the overlying layers of redundant metal and the overlying first etch-resistant barrier; (g) depositing a second etch-resistant barrier over the blanket metal and the first etch-resistant barrier; (h) reactive ion etching the second etch-resistant barrier so as to expose the blanket metal and at least partially and selectively remove the second etch-resistant barrier from the first etch-resistant barrier; and (i) etching the blanket metal.
Claim 2
Independent Claim
158 words
A method for selectively depositing a plurality of metal layers on a substrate, comprising the steps of: (a) providing a substrate; (b) depositing at least one layer of blanket metal on a surface of the substrate; (c) building a lift-off stencil over the blanket metal, said lift-off stencil having selected open areas through which the blanket metal is exposed; (d) depositing at least one layer of redundant metal over the lift-off stencil and in the selected open areas; (e) depositing a first etch-resistant barrier over the redundant metal; (f) removing the lift-off stencil and the overlying layers of redundant metal and the overlying first etch-resistant barrier; (g) depositing a second etch-resistant barrier over the blanket metal and the first etch-resistant barrier; (h) reactive ion etching the second etch-resistant barrier so as to expose the blanket metal and at least partially and selectively remove the second etch-resistant barrier from the first etch-resistant barrier; and (i) etching the blanket metal.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein the first etch-resistant barrier comprises hexamethyldisilizane (HMDS).
Claim 4
Dependent Claim
16 words
The method of claim 1, wherein the second etch-resistant barrier comprises silicon dioxide (SiO 2 ).
Claim 5
Dependent Claim
24 words
The method of claim 1 further comprising the step of reactive ion etching the first etch-resistant barrier so as to expose the redundant metal.
Claim 6
Dependent Claim
24 words
The method of claim 1 further comprising the step of wet etching the second etch-resistant barrier so as to remove the remaining part thereof.
Claim 7
Dependent Claim
24 words
The method of claim 5 further comprising the step of reactive ion etching the first etch-resistant barrier so as to expose the redundant metal.
Claim 8
Dependent Claim
11 words
The method of claim 1, wherein the substrate is a ceramic.
Claim 9
Dependent Claim
15 words
The method of claim 7, wherein the ceramic is alumina (Al 2 O 3 ).
Claim 10
Dependent Claim
12 words
The method of claim 7, wherein the ceramic is a glass ceramic.
Claim 11
Dependent Claim
12 words
The method of claim 1, wherein the substrate is a polymeric material.
Claim 12
Dependent Claim
11 words
The method of claim 10, wherein the polymeric material is polyimide.
Claim 13
Dependent Claim
17 words
The method of claim 1, wherein the blanket metal comprises layers of chromium, copper and chromium, respectively.
Claim 14
Dependent Claim
13 words
The method of claim 1, wherein the blanket metal comprises an aluminum/copper alloy.
Claim 15
Dependent Claim
18 words
The method of claim 1, wherein the redundant metal comprises layers of chromium, copper, nickel and gold, respectively.