US4092442A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of depositing thin films utilizing a polyimide mask
Assignee: International Business Machines Corp
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Filing: 1976-12-30
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Granted: 1978-05-30
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Expires: 1996-12-30
Abstract
Abstract A polyimide mask is used as an undercoat for a standard resist material during the patterning of an underlying thin film layer by plasma etching. The polyimide mask can withstand the conditions of reactive ion (plasma) etching so that it can be used as a protective coating when the thin film is subtractively etched by the plasma etching. The polyimide is particularly useful in processes using either positive or negative electron beam lithography which require sensitive resists.
Inventors
- 👤 Ram Kumar Agnihotri
- 👤 II Herman Carl Kluge
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 00:50
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
81 words
A method of forming a patterned thin film on a substrate comprising: depositing said thin film onto said substrate; forming on said thin film a polyimide layer; forming a resist layer on said polyimide layer; forming openings through said resist and polyimide layers extending to said thin film, thereby exposing selected portions of said thin film; and removing the exposed thin film by plasma etching, using said polyimide as a mask, whereby the remaining thin film is in the desired pattern.
Claim 2
Independent Claim
81 words
A method of forming a patterned thin film on a substrate comprising: depositing said thin film onto said substrate; forming on said thin film a polyimide layer; forming a resist layer on said polyimide layer; forming openings through said resist and polyimide layers extending to said thin film, thereby exposing selected portions of said thin film; and removing the exposed thin film by plasma etching, using said polyimide as a mask, whereby the remaining thin film is in the desired pattern.
Claim 3
Dependent Claim
21 words
A method as in claim 1 further comprising the step of: removing the remaining portions of said polyimide layer by etching.
Claim 4
Dependent Claim
27 words
A method as in claim 2 wherein said polyimide removing step is conducted by plasma etching with a gas to which said thin film material is insensitive.
Claim 5
Dependent Claim
13 words
A method as in claim 1 wherein said thin film is a metal.
Claim 6
Dependent Claim
13 words
A method as in claim 1 wherein said thin film is a dielectric.
Claim 7
Dependent Claim
21 words
A method as in claim 1 wherein the step of forming openings in said polyimide layer is accomplished by plasma etching.
Claim 8
Dependent Claim
56 words
A method as in claim 1 further comprising the steps of: prior to forming said resist layer, forming on said polyimide layer a layer of polydimethylsiloxane resin material having a preponderance of Si--O bonds relative to the number of Si--O bonds; and after developing said resist layer, forming conformal openings in said resin by plasma etching.
Claim 9
Dependent Claim
35 words
A method as in claim 7 further comprising; ashing residue from said openings in said resist layer prior to plasma etching said resin, whereby said resin serves as a protective layer to the underlying polyimide.
Claim 10
Independent Claim
114 words
a method of making a patterned thin film on a semiconductor substrate comprising: covering at least a portion of said substrate with a dielectric material; depositing a film of metal on said dielectric material; covering said metal film with a polyamic acid; at least partially curing said polyamic acid to form an at least partially-cured polyimide; covering said polyimide with a layer of photoresist; exposing said photoresist with a masking pattern which defines a desired thin film pattern; removing said photoresist and underlying polyimide to expose portions of said metal; removing said exposed metal portions by plasma etching using the remaining polyimide as a mask, whereby the remaining metal is in said desired pattern.
Claim 11
Independent Claim
114 words
a method of making a patterned thin film on a semiconductor substrate comprising: covering at least a portion of said substrate with a dielectric material; depositing a film of metal on said dielectric material; covering said metal film with a polyamic acid; at least partially curing said polyamic acid to form an at least partially-cured polyimide; covering said polyimide with a layer of photoresist; exposing said photoresist with a masking pattern which defines a desired thin film pattern; removing said photoresist and underlying polyimide to expose portions of said metal; removing said exposed metal portions by plasma etching using the remaining polyimide as a mask, whereby the remaining metal is in said desired pattern.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-05-29 | 1981-11-28 | 1982-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-05-29 | 1985-11-28 | 1986-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-05-29 | 1989-11-28 | 1990-05-30 | $7700.00 | Window Closed / Lapsed |