Abstract A liftoff process for selectively depositing additional metal layers on an existing metallurgy pattern supported on a dielectric substrate which includes the steps of (1) depositing a melt material on the dielectric substrate which material, after melting, has the characteristic of wetting the substrate surface, but not the existing metallurgy pattern, (2) heating the melt material to convert it to a liquid wherein the material is distributed to cover the dielectric substrate surface, but not the metallurgy pattern, (3) cooling the liquid material to solidify it, (4) depositing a blanket layer of metal over the solidified material and the metallurgy pattern, and (5) dissolving the solidified material in a suitable solvent thereby removing the material and the overlying metal layer portions.
A lift-off process for selectively depositing a metal layer over an existing metallurgy pattern supported on a dielectric substrate comprising: depositing a meltable material on the dielectric substrate which material, after melting, will wet the substrate surface but not the existing metallurgy pattern; melting the material to redistribute the material over the substrate to cover the dielectric substrate wettable areas, leaving the unwettable metallurgy pattern exposed; causing said material to solidify to thereby form a masking layer over the substrate surface but not over said existing metallurgy pattern; depositing a blanket layer of said metal over said masking layer and said metallurgy pattern; dissolving said masking layer resulting in the removal of said masking layer and the overlying areas of said blanket metal layer.
Claim 2
Dependent Claim
124 words
A lift-off process for selectively depositing a metal layer over an existing metallurgy pattern supported on a dielectric substrate comprising: depositing a meltable material on the dielectric substrate which material, after melting, will wet the substrate surface but not the existing metallurgy pattern; melting the material to redistribute the material over the substrate to cover the dielectric substrate wettable areas, leaving the unwettable metallurgy pattern exposed; causing said material to solidify to thereby form a masking layer over the substrate surface but not over said existing metallurgy pattern; depositing a blanket layer of said metal over said masking layer and said metallurgy pattern; dissolving said masking layer resulting in the removal of said masking layer and the overlying areas of said blanket metal layer.
Claim 3
Dependent Claim
14 words
The process of claim 1 wherein said substrate is formed of a ceramic material.
Claim 4
Dependent Claim
13 words
The process of claim 2 wherein said substrate is a multilayer ceramic substrate.