US5376591A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing semiconductor device
Assignee: Alcan Tech Co Inc
•
Filing: 1992-06-08
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Granted: 1994-12-27
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Expires: 2012-06-08
Abstract
Abstract A, method for forming semiconductor device, includes forming an insulating film on a body by chemical vapor deposition, at low temperature raising the temperature of, the body, and exposing the body to plasma gas.
Inventors
- 👤 Kazuo Maeda
- 👤 Noboru Tokumasu
- 👤 Yuko Nishimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:49
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P95/00; H10P14/6336; H10P14/6922; H10P14/6923; Y; Y10; Y10S; Y10S148/00; Y10S148/118
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
80 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on a substrate by chemical vapor deposition, said insulating film containing H 2 O in its interior; heating said insulating film; and contacting said heated insulating film with a plasma consisting of at least one gas selected from the group consisting of inert gases and gaseous oxygen, to drive said H 2 O out of said film, thereby densifying said film throughout its entire thickness.
Claim 2
Independent Claim
80 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on a substrate by chemical vapor deposition, said insulating film containing H 2 O in its interior; heating said insulating film; and contacting said heated insulating film with a plasma consisting of at least one gas selected from the group consisting of inert gases and gaseous oxygen, to drive said H 2 O out of said film, thereby densifying said film throughout its entire thickness.
Claim 3
Dependent Claim
24 words
A method in accordance with claim 1 wherein said contacting is conducted with said film at a temperature of 350° C. to 450° C.
Claim 4
Dependent Claim
30 words
A method in accordance with claim 1 wherein said insulating film further contains SiOH groups and wherein said contacting with a plasma eliminates said SiOH groups from said insulating film.
Claim 5
Dependent Claim
21 words
A method in accordance with claim 1 wherein said contacting induces ultraviolet radiation at the surface and interior of said film.
Claim 6
Dependent Claim
15 words
A method in accordance with claim 1 wherein said insulating film is SiO 2 .
Claim 7
Dependent Claim
39 words
A method in accordance with claim 1 wherein said forming of an insulating film is by reaction of a silane and oxygen, in gaseous phase at 350° C. to 450° C., to deposit SiO 2 as said insulating film.
Claim 8
Dependent Claim
41 words
A method for manufacturing a semiconductor device according to claim 1, wherein the chemical vapor deposition for forming said insulating film is effected with a mixed gas of mono-silane (SiH 4 )/oxygen (O 2 ) at 350° C. to 450° C.
Claim 9
Dependent Claim
40 words
A method for manufacturing a semiconductor device according to claim 1, wherein the chemical vapor deposition for forming said insulating film is effected with a mixed gas of organic silane (TEOS)/ozone (O 3 ) at 350° C. to 450° C.
Claim 10
Dependent Claim
28 words
A method for manufacturing a semiconductor device according to claim 1, wherein the insulating film formed by said chemical vapor deposition is an insulating film doped with impurities.
Claim 11
Dependent Claim
32 words
A method for manufacturing a semiconductor device according to claim 9, wherein said insulating film doped with impurities is any one of a PSG film, a BSG film and a BPSG film.
Claim 12
Dependent Claim
22 words
A method for manufacturing a semiconductor device according to claim 1, wherein the recited steps are repeated at least one more time.
Claim 13
Independent Claim
66 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on a substrate by chemical vapor deposition, said insulating film containing H 2 O in its interior; heating said insulating film; and contacting said heated insulating film with a plasma consisting of ammonia to drive said H 2 O out of said film, thereby densifying said film throughout its entire thickness.
Claim 14
Independent Claim
66 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film on a substrate by chemical vapor deposition, said insulating film containing H 2 O in its interior; heating said insulating film; and contacting said heated insulating film with a plasma consisting of ammonia to drive said H 2 O out of said film, thereby densifying said film throughout its entire thickness.
Claim 15
Dependent Claim
24 words
A method in accordance with claim 12 wherein said contacting is conducted with said film at a temperature of 350° C. to 450° C.
Claim 16
Dependent Claim
30 words
A method in accordance with claim 12 wherein said insulating film further contains SiOH groups and wherein said contact with a plasma eliminates said SiOH groups from said insulating film.
Claim 17
Dependent Claim
21 words
A method in accordance with claim 12 wherein said contacting induces ultraviolet radiation at the surface and interior of said film.
Claim 18
Dependent Claim
15 words
A method in accordance with claim 12 wherein said insulating film is SiO 2 .
Claim 19
Dependent Claim
39 words
A method in accordance with claim 12 wherein said forming of an insulating film is by reaction of a silane and oxygen, in gaseous phase at 350° C. to 450° C., to deposit SiO 2 as said insulating film.
Claim 20
Dependent Claim
18 words
A method in accordance with claim 1 wherein said plasma is formed of a gas consisting of oxygen.
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