US4708884A
Expired / Lapsed
US
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Low temperature deposition of silicon oxides for device fabrication
Assignee: Nokia Bell Labs
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Filing: 1986-06-18
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Granted: 1987-11-24
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Expires: 2006-06-18
Abstract
Abstract Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C. through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures. More generally, lowered-temperature processing can be applied to the deposition of other materials which include silicon oxide. For example, borophosphosilicate glasses can be deposited by chemical vapor deposition processing involving flash-evaporation of a mixture of liquid precursor reagents.
Inventors
- 👤 Edwin A. Chandross
- 👤 Robert E. Dean
- 👤 Patrick K. Gallagher
- 👤 Roland A. Levy
- 👤 Frank Schrey
- 👤 Gerald Smolinsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:09
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/6922; H10P14/6923
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
108 words
A process for forming a device including a region of a material which comprises a silicon oxide, said process comprising the steps of subjecting a substrate to an environment into which a gas stream is introduced, and inducing a reaction that leads to deposition of said material n said substrate, said gas stream comprising (i) a composition selected from the group consisting of diacetoxyditertiarybutoxysilane (DADBS), diacetoxydiisopropoxysilane (DADIS), and tritertiarybutoxyethoxysilane (TBES), and (ii) an additive selected form the group consisting of organophosphites, organophosphates and organoborates, wherein said deposition is induced at a temperature less than 600 degrees C., and whereby said deposition has a conformance of at least 0.9.
Claim 2
Dependent Claim
108 words
A process for forming a device including a region of a material which comprises a silicon oxide, said process comprising the steps of subjecting a substrate to an environment into which a gas stream is introduced, and inducing a reaction that leads to deposition of said material n said substrate, said gas stream comprising (i) a composition selected from the group consisting of diacetoxyditertiarybutoxysilane (DADBS), diacetoxydiisopropoxysilane (DADIS), and tritertiarybutoxyethoxysilane (TBES), and (ii) an additive selected form the group consisting of organophosphites, organophosphates and organoborates, wherein said deposition is induced at a temperature less than 600 degrees C., and whereby said deposition has a conformance of at least 0.9.
Claim 3
Dependent Claim
13 words
The process of claim 1 in which said organoderivative is trimethyl phosphite (TMP).
Claim 4
Dependent Claim
13 words
The process of claim 1 in which said organoderivative is trimethyl borate (TMB).
Claim 5
Dependent Claim
25 words
The process of claim 1 in which said material is a silicate glass comprising silicon oxide in an amount of at least 50 weight percent.
Claim 6
Dependent Claim
13 words
The process of claim 4 in which said silicate glass comprises boron oxide.
Claim 7
Dependent Claim
13 words
The process of claim 4 in which said silicate glass comprises phosphorus oxide.
Claim 8
Dependent Claim
16 words
The process of claim 4 in which said silicate glass comprises boron oxide and phosphorus oxide.
Claim 9
Dependent Claim
51 words
The process of claim 7 in which said silicate glass comprises B 2 O 3 in an amount in the range of from 3 to 26 weight percent, and P 2 O 5 in an amount in the range of from 2 to 18 weight percent, remainder essentially SiO 2 .
Claim 10
Dependent Claim
17 words
The process of claim 1 in which making said gas stream comprises flash-evaporating a mixture of liquids.
Claim 11
Dependent Claim
15 words
The process of claim 1 in which making said gas stream comprises mixing of gases.
Claim 12
Dependent Claim
12 words
The process of claim 1 in which said substrate comprises lithium niobate.
Claim 13
Dependent Claim
11 words
The process of claim 1 in which said substrate comprises silicon.
Claim 14
Dependent Claim
19 words
The process of claim 1 in which inducing said reaction involves producing a discharge in said mixture of gases.
Claim 15
Dependent Claim
14 words
The process of claim 1 in which inducing said reaction involves heating said substrate.
Claim 16
Dependent Claim
11 words
The device made by the process in accordance with claim 1.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-11-23 | 1991-05-25 | 1991-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-23 | 1995-05-25 | 1995-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-23 | 1999-05-25 | 1999-11-24 | $7700.00 | Window Closed / Lapsed |