US4597985A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low temperature deposition of silicon oxides for device fabrication
Assignee: Nokia Bell Labs
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Filing: 1985-04-15
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Granted: 1986-07-01
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Expires: 2005-04-15
Abstract
Abstract Conformal layers of a silicon oxide, such as silicon dioxide, are deposited at temperatures below 600 degrees C. through the decomposition of compounds such as diacetoxyditertiarybutoxysilane. The required temperatures do not significantly affect temperature-sensitive structures. Therefore, it is possible to form silicon oxide regions in the processing of devices having these structures.
Inventors
- 👤 Edwin A. Chandross
- 👤 Robert E. Dean
- 👤 Gerald Smolinsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 04:17
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
89 words
A process for forming a device including a region of a silicon oxide comprising the steps of subjecting a substrate to an environment into which a gas is introduced and inducing a reaction that leads to deposition of said silicon oxide on said substrate characterized in that said gas comprises a composition chosen from the group consisting of diacetoxyditertiarybutoxysilane (DADBS), diacetoxydiisopropoxysilane (DADIS), and tritertiarybutoxyethoxysilane (TBES), wherein said deposition is induced at a temperature less than 600 degrees C. and whereby said deposition has a conformance of at least 0.9.
Claim 2
Dependent Claim
89 words
A process for forming a device including a region of a silicon oxide comprising the steps of subjecting a substrate to an environment into which a gas is introduced and inducing a reaction that leads to deposition of said silicon oxide on said substrate characterized in that said gas comprises a composition chosen from the group consisting of diacetoxyditertiarybutoxysilane (DADBS), diacetoxydiisopropoxysilane (DADIS), and tritertiarybutoxyethoxysilane (TBES), wherein said deposition is induced at a temperature less than 600 degrees C. and whereby said deposition has a conformance of at least 0.9.
Claim 3
Dependent Claim
12 words
The process of claim 1 wherein said substrate includes LiNbO 3 .
Claim 4
Dependent Claim
10 words
The process of claim 1 wherein said substrate includes silicon.
Claim 5
Dependent Claim
17 words
The process of claim 3 wherein said reaction is induced by producing a discharge in said gas.
Claim 6
Dependent Claim
14 words
The process of claim 3 wherein said reaction is induced by heating said substrate.
Claim 7
Dependent Claim
18 words
The process of claim 5 wherein said substrate is heated to a temperature less than 600 degrees C.
Claim 8
Dependent Claim
17 words
The process of claim 1 wherein said reaction is induced by producing a discharge in said gas.
Claim 9
Dependent Claim
14 words
The process of claim 1 wherein said reaction is induced by heating said substrate.
Claim 10
Dependent Claim
18 words
The process of claim 8 wherein said substrate is heated to a temperature less than 600 degrees C.
References Cited (Backward Citations)
US2566956A
Cited
US3655438A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-06-30 | 1989-12-30 | 1990-07-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-30 | 1993-12-30 | 1994-07-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-30 | 1997-12-30 | 1998-07-01 | $7700.00 | Window Closed / Lapsed |