Low temperature chemical vapor deposition of silicon dioxide films

Claim 1

A methyl of forming a SiO 2 based layer by chemical vapor deposition on a semiconductor structure, the method comprising the steps of: introducing the semiconductor substrate into a reactor chamber; heating the semiconductor structure to a predetermined temperature in the range of substantially 300° C.-500° C.; introducing a predetermined gas reactant into the reactor chamber, with the first gas reactant being selected from a trialkoxysilane having the formula ##STR9## where R is a method group, and ethyl gruop, or a propyl group; introducing a predetermined oxidizing gas reactant, consisting essentially of a mixture of oxygen and ozone, where the weight percentage of ozone present in the oxidizing gas reactant is greater than 0 percent but less than substantially 10 percent, into the reactor chamber, where the reactor chamber pressure is between substantially 0.5 Torr and one atmosphere; allowing the gas reactant and oxidizing gas reactant to thermally react to produce molecules of SiO 2 ; and allowing the SiO 2 molecules thus produced to be deposited on the semiconductor structure.