US3093507A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for coating with silicon dioxide
Assignee: AT&T Inc
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Filing: 1961-10-06
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Granted: 1963-06-11
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Expires: 1981-10-06
Abstract
No abstract record available.
Inventors
- 👤 James J Lander
- 👤 Morrison James
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 20:41
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; C; C23; C23C; C23C14/00; C23C14/0021; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/6326; H10P14/6328; Y; Y10; Y10S; Y10S148/00; Y10S148/118
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
116 words
THE METHOD OF COATING THE SURFACE OF A DIFFUSED JUNCTION SILICON DIODE WITH A PROTECTIVE COATING OF SILICON DIOXIDE WHICH COMPRISES HEATING A SILICON SOURCE HAVING A PURITY OF AT LEAST 99.9% TO A TEMPERATURE WITHIN THE RANGE OF 625 TO 1000*C. IN THE PRESENCE OF OXYGEN MANTAINED AT A PRESSURE WITHIN THE RANGE OF 10**10 TO 10**3 MILLIMETERS OF MERCURY, THE LOWER TEMPERATURE CORRESPONDING WITH THE LOWER PRESSURE, THEREBY VAPORIZING SILICON MONOXIDE FROM THE SURFACE OF SAID SILICON SOURCE, AND CONDENSING SAID SILICON MONOXIDE ON THE SURFACE OF SAID DIFFUSED JUNCTION SILICON DIODE WHICH IS MAINTAINED AT A TEMPERATURE APPROXIMATELY 50*C. BELOW THAT OF THE SOURCE SILICON, THEREBY RESULTING IN A COATING OF SILICON DIOXIDE.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-06-10 | 1966-12-10 | 1967-06-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-06-10 | 1970-12-10 | 1971-06-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-06-10 | 1974-12-10 | 1975-06-11 | $7700.00 | Window Closed / Lapsed |