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US4282268A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of depositing a silicon oxide dielectric layer

Assignee: RCA Corp
•
Filing: 1978-06-06
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Granted: 1981-08-04
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Expires: 1998-06-06
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Abstract

Abstract This invention pertains to a method of depositing a silicon oxide, such as silicon dioxide, dielectric layer on a substrate by utilizing a glow discharge and a dielectric precursor having the formula <IMAGE> wherein R1 is selected from the group consisting of H and -CH3, R2 and R3 are independently selected from the group consisting of H, -CH3, -OCH3 and -OC2H5 and R4 is selected from the group consisting of -OCH3 and -OC2H5.

Inventors

  • 👤 Eldon B. Priestley
  • 👤 Patrick J. Call

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 13:51
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 162 words
In a method for preparing a video disc comprising a substrate containing video information in the form of a surface relief pattern having a conductive layer thereon and dielectric layer thereover wherein the said dielectric layer is deposited by the steps comprising introducing the substrate into an evacuated chamber, introducing oxygen and a dielectric precursor into the chamber and activating the pecursor around the substrate by means of a glow discharge whereby a dielectric coating is deposited on the disc, wherein the improvement comprises preparing a silicon oxide dielectric layer wherein the dielectric precursor has the formula ##STR5## wherein R 1 is selected from the group consisting of H and --CH 3 , R 2 and R 3 are independently selected from the group consisting of H, --CH 3 , --OCH 3 and --OC 2 H 5 and R 4 is selected from the group consisting of --OCH 3 and --OC 2 H 5 whereby a silicon oxide dielectric layer is deposited.
Claim 2
Dependent Claim 162 words
In a method for preparing a video disc comprising a substrate containing video information in the form of a surface relief pattern having a conductive layer thereon and dielectric layer thereover wherein the said dielectric layer is deposited by the steps comprising introducing the substrate into an evacuated chamber, introducing oxygen and a dielectric precursor into the chamber and activating the pecursor around the substrate by means of a glow discharge whereby a dielectric coating is deposited on the disc, wherein the improvement comprises preparing a silicon oxide dielectric layer wherein the dielectric precursor has the formula ##STR5## wherein R 1 is selected from the group consisting of H and --CH 3 , R 2 and R 3 are independently selected from the group consisting of H, --CH 3 , --OCH 3 and --OC 2 H 5 and R 4 is selected from the group consisting of --OCH 3 and --OC 2 H 5 whereby a silicon oxide dielectric layer is deposited.
Claim 3
Dependent Claim 13 words
A method according to claim 1 wherein the silicon oxide is silicon dioxide.
Claim 4
Dependent Claim 14 words
A method according to claim 1 wherein the chamber pressure is below 12 microns.
Claim 5
Dependent Claim 31 words
A method according to claim 1 wherein the ratio of the partial pressure of the oxygen to the partial pressure of the precursor in the chamber is from 1:1 to 10:1.
Claim 6
Dependent Claim 29 words
A method according to claim 1 wherein the ratio of the partial pressure of the oxygen to the partial pressure of the precursor in the chamber is about 4:1.
Claim 7
Dependent Claim 13 words
A method according to claim 1 wherein the dielectric precursor is methyl dimethoxysilane.
Claim 8
Dependent Claim 21 words
A method according to claim 1 wherein the deposited silicon oxide film is from about 50 to about 250 angstroms thick.
Claim 9
Dependent Claim 17 words
A method according to claim 1 wherein the deposited silicon oxide film is about 150 angstroms thick.

References Cited (Backward Citations)

US3243363A Cited
US3158505A Cited
US3473959A Cited
JPS46534Y1 Cited
US3833408A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1984-08-03 1985-02-02 1985-08-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1988-08-03 1989-02-02 1989-08-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1992-08-03 1993-02-02 1993-08-04 $7700.00 Window Closed / Lapsed

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