US3614548A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a t{11 o{11 -s{11 o{11 {0 composite oxide layer
Assignee: Panasonic Holdings Corp
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Filing: 1970-06-11
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Granted: 1971-10-19
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Expires: 1990-06-11
Abstract
Abstract A surface protective layer or surface insulating layer of a composite oxide which is formed of silicon dioxide (SiO2) to which is added with less than 0.02 percent by weight of titanium dioxide (TiO2) stabilizes and improves the characteristics of the semiconductor device of a single layer formed of silicon oxide. The above-mentioned semiconductor device is provided by mixing small amount of gaseous organic compounds of titanium such as triisopropyl titanate with a gaseous organic compound of silicon such as tetraethoxysilane and leading the resultant gaseous mixture onto a predetermined semiconductor substrate which is heated and held at a temperature of from 300* to 500* C. to react therewith.
Inventors
- 👤 Morio Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:54
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D99/00
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
40 words
A semiconductor device comprising a semiconductor substrate having a composite oxide layer comprising titanium dioxide and silicon dioxide on the surface thereof, the titanium dioxide being in a range of 0.005 percent to 0.05 percent by weight of the layer.
Claim 2
Independent Claim
87 words
A method of manufacturing a semiconductor substrate having a TiO2-SiO2 composite layer on the surface with the TiO2 being less than 0.02 percent by weight of the layer, said method comprising mixing a gaseous organic compound of silicon and a gaseous organic compound of titanium with the organic compound of titanium being no more than 0.02 percent of the mixture by weight, and applying the gaseous mixture to a surface of said semiconductor substrate while maintaining the substrate at a temperature of from 300* to 500* C.
Claim 3
Dependent Claim
30 words
A method of manufacturing a semiconductor device as claimed in claim 7, in which tetraethoxysilane and triisopropyltitanate are the organic compound of silicon and the organic compound of titanium, respectively.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-10-18 | 1975-04-19 | 1975-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-10-18 | 1979-04-19 | 1979-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-10-18 | 1983-04-19 | 1983-10-19 | $7700.00 | Window Closed / Lapsed |