US5874367A
Expired / Lapsed
US
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Method of treating a semi-conductor wafer
Assignee: Tokyo Electron Ltd
•
Filing: 1993-06-30
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Granted: 1999-02-23
•
Expires: 2013-06-30
Abstract
Abstract A wafer processing method relates to treating a semi-conductor wafer and in particular, but not exclusively, to planarization. The method consists of depositing a liquid short-chain polymer formed from a silicon containing gas or vapor. Subsequently water and OH are removed and the layer is stabilised.
Inventors
- 👤 Christopher David Dobson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:13
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; B; B05; B05D; B05D1/00; B05D1/60; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6536; H10P14/6538; H10P14/6548; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6684; H10P14/6686; H10P14/69; H10P14/6903; H10P14/6905; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; Y; Y10; Y10S; Y10S438/00; Y10S438/935
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
61 words
A method of treating a semi-conductor wafer, said method steps consisting essentially of: positioning the wafer in a chamber; introducing into the chamber silicon-containing gas or vapour and a compound, containing peroxide bonding, in vapour form; and spontaneously reacting the silicon-containing gas or vapour with the compound to form a short-chain polymer on the wafer to form a generally planar layer.
Claim 2
Independent Claim
61 words
A method of treating a semi-conductor wafer, said method steps consisting essentially of: positioning the wafer in a chamber; introducing into the chamber silicon-containing gas or vapour and a compound, containing peroxide bonding, in vapour form; and spontaneously reacting the silicon-containing gas or vapour with the compound to form a short-chain polymer on the wafer to form a generally planar layer.
Claim 3
Dependent Claim
19 words
A method as claimed in claim 1 wherein the silicon-containing gas or vapour is a silane or higher silane.
Claim 4
Dependent Claim
15 words
A method as claimed in claim 1 wherein the compound is hydrogen peroxide or ethandiol.
Claim 5
Dependent Claim
16 words
A method as claimed in claim 1, further comprising removing water and/or OH from the layer.
Claim 6
Dependent Claim
22 words
A method as claimed in claim 4 wherein the water and/or OH removing step includes exposing the layer to a reduced pressure.
Claim 7
Dependent Claim
21 words
A method as claimed in claim 5 wherein the layer is exposed to reduced pressure for between 1.5 and 2.5 minutes.
Claim 8
Dependent Claim
22 words
A method as claimed claim 4 wherein water and/or OH removing step includes exposing the layer to a low power density plasma.
Claim 9
Dependent Claim
19 words
A method as claimed in claim 7 wherein the plasma heats the layer to between 40° to 120° C.
Claim 10
Dependent Claim
23 words
A method as claimed in claim 1, further comprising forming or depositing an under layer prior to the deposition of the polymer layer.
Claim 11
Dependent Claim
17 words
A method as claimed in claim 9 wherein the under layer is deposited by chemical vapour deposition.
Claim 12
Dependent Claim
18 words
A method as claimed in claim 10 wherein the wafer is preheated prior to the under layer deposition.
Claim 13
Dependent Claim
31 words
A method as claimed in claim 4, further comprising depositing a capping layer on the polymer layer after substantially all the water and/or OH has been removed from the polymer layer.
Claim 14
Dependent Claim
15 words
A method as claimed in claim 12 wherein the capping layer is SiO 2 .
Claim 15
Dependent Claim
19 words
A method as claimed in claim 12 including heat treating the wafer after the capping layer has been deposited.
Claim 16
Independent Claim
26 words
A method as claimed in claimed 1 wherein the wafer is located on a platen maintained at or below the dew point of the silicon-containing vapour.
Claim 17
Dependent Claim
25 words
A method as claimed in claim 15 wherein the wafer is lifted from platen for any processing step involving or causing heating of the wafer.
Claim 18
Dependent Claim
20 words
A method as claimed in claim 16 wherein the lifted position lies between the platen and a wafer load/unloaded position.
Claim 19
Dependent Claim
19 words
A method as claimed in claim 1 wherein the compound is hydrogen peroxide of between 45% and 55% concentration.
Claim 20
Dependent Claim
16 words
A method as claimed in claim 18 wherein the concentration of the hydrogen peroxide is 50%.
Claim 21
Dependent Claim
24 words
A method as claimed in claim 1 wherein the silicon-containing gas or vapour and the compound are reacted in a chemical vapour deposition process.
Claim 22
Dependent Claim
34 words
A method as claimed in claim 20 wherein the reaction takes place between electrodes and wherein the silicon-containing gas or vapour and the compound are kept apart until they are introduced between the electrodes.
Claim 23
Dependent Claim
33 words
A method as claimed in claim 1 wherein the gas is SiH 4 and the compound is H 2 O 2 and there is more H 2 O 2 than SiH 4 .
Claim 24
Dependent Claim
22 words
A method as claimed in claim 22 wherein the H 2 O 2 :SiH 4 ratio is of the order of 3:1.
Claim 25
Dependent Claim
22 words
A method as claimed in claim 1 wherein the chamber is washed through with the compound between at least two processing steps.
Claim 26
Independent Claim
76 words
A method of treating a semi-conductor wafer, said method steps consisting essentially of: positioning the wafer in a chamber; introducing into the chamber silicon-containing gas or vapour and a compound containing peroxide bonding, in vapour form, which gas or vapour and compound are capable of reacting spontaneously to form a short-chain polymer; and reacting the silicon-containing gas or vapour with the compound to form the short-chain polymer on the wafer to form a generally planar layer.
Claim 27
Independent Claim
76 words
A method of treating a semi-conductor wafer, said method steps consisting essentially of: positioning the wafer in a chamber; introducing into the chamber silicon-containing gas or vapour and a compound containing peroxide bonding, in vapour form, which gas or vapour and compound are capable of reacting spontaneously to form a short-chain polymer; and reacting the silicon-containing gas or vapour with the compound to form the short-chain polymer on the wafer to form a generally planar layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-22 | 2002-08-24 | 2003-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-22 | 2006-08-24 | 2007-02-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-22 | 2010-08-24 | 2011-02-23 | $7700.00 | Window Closed / Lapsed |