US5360646A
Expired / Lapsed
US
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Chemical vapor deposition method of silicon dioxide film
Assignee: Applied Materials Inc
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Filing: 1993-09-01
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Granted: 1994-11-01
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Expires: 2013-09-01
Abstract
Abstract A chemical vapor deposition method that utilizes conventional CVD equipment to deposit silicon dioxide films is provided. The method is capable of producing excellent step coverage on substrates with steep step portions. Tetra-ethoxy-ortho-silicate, acetic-acid, and water are independently gasified by gasifiers and are fed into a reaction chamber. The mixed vapor is heated in the chamber to activate a chemical reaction so that high-fluidity tetra-hydroxy-silicon can be uniformly deposited on a semiconductor substrate containing step portions. Subsequently, two water molecules are detached from tetra-hydroxy-silicon in a dehydration process thereby forming silicon dioxide.
Inventors
- 👤 Katsumi Morita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:38
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45519; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402; C23C16/45561; C23C16/45595
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
46 words
A method of depositing a silicon dioxide film on a substrate positioned in a chemical vapor deposition chamber comprising the step of flowing a mixture of tetra-ethoxy-ortho-silicate gas and gaseous acetic-acid together with water vapor into said chamber at a temperature higher than the ambient temperature.
Claim 2
Independent Claim
46 words
A method of depositing a silicon dioxide film on a substrate positioned in a chemical vapor deposition chamber comprising the step of flowing a mixture of tetra-ethoxy-ortho-silicate gas and gaseous acetic-acid together with water vapor into said chamber at a temperature higher than the ambient temperature.
Claim 3
Dependent Claim
23 words
A method according to claim 1, wherein said mixture of gases is flowed into the deposition chamber by a carrier gas of nitrogen.
Claim 4
Dependent Claim
14 words
A method of according to claim 2, wherein said substrate is a semiconductor wafer.
Claim 5
Dependent Claim
33 words
A method according to claim 3, wherein said chemical vapor deposition (CVD) chamber is selected from the group consisting of an atmospheric-pressure CVD chamber, a reduced-pressure CVD chamber and a plasma CVD chamber.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-31 | 1998-05-02 | 1998-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-31 | 2002-05-02 | 2002-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-31 | 2006-05-02 | 2006-11-01 | $7700.00 | Window Closed / Lapsed |