US5618745A
Expired / Lapsed
US
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Method of manufacturing a one transistor one-capacitor memory cell structure with a trench containing a conductor penetrating a buried insulating film
Assignee: Lapis Semiconductor Co Ltd
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Filing: 1994-12-30
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Granted: 1997-04-08
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Expires: 2014-12-30
Abstract
Abstract A method of manufacturing a one-transistor one-capacitor memory cell structure. In a first step, a buried insulating film layer is formed in a semiconductor substrate and a semiconductor layer is formed on the buried insulating film layer. In a second step, a capacitor trench is formed in the substrate by penetrating through the buried layer and a dielectric film layer is formed on an inner side wall surface of the trench. Then, a conductive material is filled into the trench to form a capacitor. Finally, an MIS transistor is formed in the semiconductor layer adjacent to the trench capacitor such that either the drain or the source makes contact with the conductive material.
Inventors
- 👤 Akio Kita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:11
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/30; H10B12/37; H10D; H10D86/00; H10D86/201; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
165 words
A method for manufacturing a one-transistor, one-capacitor memory cell, comprising the steps of: (a) forming a buried insulating film layer on a semiconductor substrate; (b) forming a semiconductor layer on the buried insulating film layer; (c) forming a trench in the semiconductor substrate by etching through the buried insulating film layer; (d) forming a dielectric film layer for a capacitor directly contacting an inner side wall surface of a lower portion of the trench; (e) filling a conductive material into the trench from a bottom of the trench up to a top edge of said dielectric film layer; (f) forming a conductive plug in an upper portion of the trench, from the top edge of the dielectric film layer, in contact with the conductive material, up to a top edge of said trench; and (g) forming a MIS transistor, having drain and source impurity regions, in the semiconductor layer in such a manner that one of the impurity regions makes contact with the conductive plug.
Claim 2
Independent Claim
165 words
A method for manufacturing a one-transistor, one-capacitor memory cell, comprising the steps of: (a) forming a buried insulating film layer on a semiconductor substrate; (b) forming a semiconductor layer on the buried insulating film layer; (c) forming a trench in the semiconductor substrate by etching through the buried insulating film layer; (d) forming a dielectric film layer for a capacitor directly contacting an inner side wall surface of a lower portion of the trench; (e) filling a conductive material into the trench from a bottom of the trench up to a top edge of said dielectric film layer; (f) forming a conductive plug in an upper portion of the trench, from the top edge of the dielectric film layer, in contact with the conductive material, up to a top edge of said trench; and (g) forming a MIS transistor, having drain and source impurity regions, in the semiconductor layer in such a manner that one of the impurity regions makes contact with the conductive plug.
Claim 3
Dependent Claim
75 words
A method for manufacturing the one-transistor, one-capacitor memory cell set forth in claim 1, wherein the steps (a) and (b) are performed in such a manner that two semiconductor substrates, a surface of at least one of which is covered by the insulating film layer, are securely affixed to each other by holding the insulating film layer therebetween and that either one of the semiconductor substrates is polished so as to make the semiconductor layer.
Claim 4
Dependent Claim
27 words
A method for manufacturing the one-transistor, one-capacitor memory cell set forth in claim 2, wherein a conductivity type of each of the two semiconductor substrates is different.
Claim 5
Dependent Claim
27 words
A method for manufacturing the one-transistor, one-capacitor memory cell set forth in claim 1, wherein the semiconductor layer is higher in doping concentration than the semiconductor substrate.
Claim 6
Dependent Claim
30 words
A method for manufacturing the one-transistor, one-capacitor memory cell set forth in claim 1, wherein an impurity concentration of the semiconductor layer is set below 10 16 cm -3 .
Claim 7
Dependent Claim
29 words
A method for manufacturing the one-transistor, one-capacitor memory cell set forth in claim 1, wherein the drain and the source impurity regions extend to the buried insulating film layer.
Claim 8
Independent Claim
136 words
A method for manufacturing a one-transistor, one-capacitor memory cell,, comprising the steps of: (a) forming an insulating film layer on a semiconductor substrate; (b) forming a semiconductor layer on the insulating film layer; (c) forming a trench in the semiconductor substrate, the insulating film layer, and the semiconductor layer; (d) forming a dielectric film layer for a capacitor directly on an inner side wall surface of a lower portion of the trench; (e) filling a conductive material into the trench from a bottom of the trench up to a level along a thickness of said insulating film layer; and (f) forming a conductive plug in an upper portion of the trench, in contact with the conductive material; and (g) forming a transistor having a diffusion layer in the semiconductor layer in contact with the conductive plug.
Claim 9
Independent Claim
136 words
A method for manufacturing a one-transistor, one-capacitor memory cell,, comprising the steps of: (a) forming an insulating film layer on a semiconductor substrate; (b) forming a semiconductor layer on the insulating film layer; (c) forming a trench in the semiconductor substrate, the insulating film layer, and the semiconductor layer; (d) forming a dielectric film layer for a capacitor directly on an inner side wall surface of a lower portion of the trench; (e) filling a conductive material into the trench from a bottom of the trench up to a level along a thickness of said insulating film layer; and (f) forming a conductive plug in an upper portion of the trench, in contact with the conductive material; and (g) forming a transistor having a diffusion layer in the semiconductor layer in contact with the conductive plug.
Claim 10
Dependent Claim
64 words
A method for manufacturing the one-transistor one-capacitor memory cell set forth in claim 7, wherein the steps (a) and (b) include the steps of forming two semiconductor substrates, a surface of at least one of which is covered by the insulating film layer; affixing the insulating film layer between the semiconductor substrates; and polishing one of the semiconductor substrates to form the semiconductor layer.
Claim 11
Dependent Claim
27 words
A method for manufacturing the one-transistor, one-capacitor memory cell set forth in claim 8, wherein a conductivity type of each of the two semiconductor substrates is different.
Claim 12
Dependent Claim
27 words
A method for manufacturing the one-transistor, one-capacitor memory cell set forth in claim 7, wherein the semiconductor layer is higher in doping concentration than the semiconductor substrate.
Claim 13
Dependent Claim
30 words
A method for manufacturing the one-transistor, one-capacitor memory cell set forth in claim 7, wherein an impurity concentration of the semiconductor layer is set below 10 16 cm -3 .
Claim 14
Dependent Claim
24 words
A method for manufacturing the one-transistor, one-capacitor memory cell set forth in claim 7, wherein the diffusion layer extends to the insulating film layer.
Claim 15
Independent Claim
145 words
A method for manufacturing a capacitor, comprising the steps of: (a) forming an insulating film layer on a semiconductor substrate; (b) forming a semiconductor thin film layer on the insulating film layer; (c) forming a trench in the semiconductor substrate, the insulating film layer, and the semiconductor layer; (d) forming a dielectric film layer for a capacitor directly on an inner side wall surface of a lower portion of the trench; (e) filling a conductive material into the trench from a bottom of the trench up to a level along a thickness of said insulating film layer; (f) forming a conductive plug in an upper portion of the trench, from a top edge of the dielectric film layer, in contact with the conductive material; and (g) forming a transistor having a diffusion layer, in the semiconductor thin film layer in contact with the conductive plug.
Claim 16
Independent Claim
145 words
A method for manufacturing a capacitor, comprising the steps of: (a) forming an insulating film layer on a semiconductor substrate; (b) forming a semiconductor thin film layer on the insulating film layer; (c) forming a trench in the semiconductor substrate, the insulating film layer, and the semiconductor layer; (d) forming a dielectric film layer for a capacitor directly on an inner side wall surface of a lower portion of the trench; (e) filling a conductive material into the trench from a bottom of the trench up to a level along a thickness of said insulating film layer; (f) forming a conductive plug in an upper portion of the trench, from a top edge of the dielectric film layer, in contact with the conductive material; and (g) forming a transistor having a diffusion layer, in the semiconductor thin film layer in contact with the conductive plug.
Claim 17
Dependent Claim
63 words
A method for manufacturing a capacitor set forth in claim 13, wherein the steps (a) and (b) include the steps of forming two semiconductor substrates, a surface of at least one of which is covered by the insulating film layer; affixing the insulating film layer between the semiconductor substrates; and polishing one of the semiconductor substrates to form the semiconductor thin film layer.
Claim 18
Dependent Claim
24 words
A method for manufacturing a capacitor set forth in claim 14, wherein a conductivity type of each of the two semiconductor substrates is different.
Claim 19
Dependent Claim
26 words
A method for manufacturing a capacitor set forth in claim 13, wherein the semiconductor thin film layer is higher in doping concentration than the semiconductor substrate.
Claim 20
Dependent Claim
29 words
A method for manufacturing a capacitor set forth in claim 13, wherein an impurity concentration of the semiconductor thin film layer is set below 10 16 cm -3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-07 | 2000-10-07 | 2001-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-07 | 2004-10-07 | 2005-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-07 | 2008-10-07 | 2009-04-08 | $7700.00 | Window Closed / Lapsed |