US6017779A
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US
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Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device
Assignee: Intellectual Keystone Technology LLC
•
Filing: 1998-02-13
•
Granted: 2000-01-25
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Expires: 2018-02-13
Abstract
Abstract In order to fabricate a high performance thin film semiconductor device using a low temperature process in which it is possible to use low price glass substrates, a thin film semiconductor device has been fabricated by forming a silicon film at less than 450° C., and, after crystallization, keeping the maximum processing temperature at or below 350° C. In applying the present invention to the fabrication of an active matrix liquid crystal display, it is possible to both easily and reliably fabricate a large, high-quality liquid crystal display. Additionally, in applying the present invention to the fabrication of other electronic circuits as well, it is possible to both easily and reliably fabricate high-quality electronic circuits.
Inventors
- 👤 Mitsutoshi Miyasaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:15
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D44/00; H10D44/40; H10D44/45; F; F16; F16C; F16C29/00; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01316; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P14/36; H10P14/3602; H10P95/00; F16C2360/00; F16C2360/44; F16C2360/45; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; G02F2202/00; G02F2202/10; G02F2202/104
Claims Analysis
Total Claims: 56
Claim 1
Independent Claim
76 words
A fabrication process for fabricating a thin film semiconductor device, comprising: forming an underlevel protection layer comprising an insulating material formed on at least a portion of a substrate; forming a semiconductor film on the underlevel protection layer the semiconductor film being an active layer of a transistor; and melt crystallizing the semiconductor film, wherein a surface roughness of the underlevel protection layer has a center line mean roughness value of about 1.5 nm or less.
Claim 2
Dependent Claim
76 words
A fabrication process for fabricating a thin film semiconductor device, comprising: forming an underlevel protection layer comprising an insulating material formed on at least a portion of a substrate; forming a semiconductor film on the underlevel protection layer the semiconductor film being an active layer of a transistor; and melt crystallizing the semiconductor film, wherein a surface roughness of the underlevel protection layer has a center line mean roughness value of about 1.5 nm or less.
Claim 3
Dependent Claim
87 words
A fabrication process for fabricating a thin film semiconductor device using a single plasma enhanced chemical vapor deposition reactor, comprising: removing films adhered in a deposition chamber of said plasma enhanced chemical vapor deposition reactor; forming a passivation layer in said deposition chamber; placing at least one substrate in said deposition chamber; forming an underlevel protection layer on said in step 4, the at least one substrate; forming a semiconductor layer on said underlevel protection layer; and removing said at least one substrate from said deposition chamber.
Claim 4
Dependent Claim
87 words
A fabrication process for fabricating a thin film semiconductor device using a single plasma enhanced chemical vapor deposition reactor, comprising: removing films adhered in a deposition chamber of said plasma enhanced chemical vapor deposition reactor; forming a passivation layer in said deposition chamber; placing at least one substrate in said deposition chamber; forming an underlevel protection layer on said in step 4, the at least one substrate; forming a semiconductor layer on said underlevel protection layer; and removing said at least one substrate from said deposition chamber.
Claim 5
Dependent Claim
115 words
A fabrication process for fabricating a thin film semiconductor device, comprising forming an underlevel protection layer comprising an insulating material formed on at least a portion of each of a plurality of substrates; placing the plurality of substrates in a deposition chamber of a low pressure chemical vapor deposition reactor, each of the plurality of substrates having a surface area S of about 90000 mm 2 or larger; placing the plurality of substrates in the deposition chamber of the low pressure chemical vapor deposition reactor at a substrate spacing of d, where d≧0.02×S 1/2 ; and forming a semiconductor film on the underlevel protection layer, the semiconductor film being an active layer of a transistor.
Claim 6
Dependent Claim
115 words
A fabrication process for fabricating a thin film semiconductor device, comprising forming an underlevel protection layer comprising an insulating material formed on at least a portion of each of a plurality of substrates; placing the plurality of substrates in a deposition chamber of a low pressure chemical vapor deposition reactor, each of the plurality of substrates having a surface area S of about 90000 mm 2 or larger; placing the plurality of substrates in the deposition chamber of the low pressure chemical vapor deposition reactor at a substrate spacing of d, where d≧0.02×S 1/2 ; and forming a semiconductor film on the underlevel protection layer, the semiconductor film being an active layer of a transistor.
Claim 7
Dependent Claim
133 words
A fabrication process for fabricating a thin film semiconductor devices comprising: forming an underlevel protection layer comprising an insulating material formed on at least a portion of a substrate; and forming a silicon-containing semiconductor film on said underlevel protection layer, the silicon-containing semiconductor film being an active layer of a transistor, wherein the silicon-containing semiconductor film is formed with a low pressure chemical vapor deposition method using a higher silane as at least one type of source gas, the higher silane being Si n H 2n+2 , where n is an integer greater than or equal to 2 and wherein a deposition temperature of less than about 450° C. is used to form the silicon-containing semiconductor film, the silicon-containing semiconductor film being deposited at a deposition rate of about 0.20 nm/min or more.
Claim 8
Dependent Claim
133 words
A fabrication process for fabricating a thin film semiconductor devices comprising: forming an underlevel protection layer comprising an insulating material formed on at least a portion of a substrate; and forming a silicon-containing semiconductor film on said underlevel protection layer, the silicon-containing semiconductor film being an active layer of a transistor, wherein the silicon-containing semiconductor film is formed with a low pressure chemical vapor deposition method using a higher silane as at least one type of source gas, the higher silane being Si n H 2n+2 , where n is an integer greater than or equal to 2 and wherein a deposition temperature of less than about 450° C. is used to form the silicon-containing semiconductor film, the silicon-containing semiconductor film being deposited at a deposition rate of about 0.20 nm/min or more.
Claim 9
Dependent Claim
25 words
A fabrication process as described in claim 4, wherein the silicon-containing semiconductor film is formed at a deposition rate of about 0.60 nm/min or more.
Claim 10
Dependent Claim
95 words
A fabrication process for fabricating a thin film semiconductor device having an underlevel protection layer formed on a portion of a substrate and a semiconductor film formed on said underlevel protection layer, the underlevel protection layer comprising an insulating material and the semiconductor film being an active layer of a transistor, the process comprising: forming the semiconductor film on top of said underlevel protection layer in a plasma enhanced chemical vapor deposition reactor; and then exposing said semiconductor film to a hydrogen plasma without breaking a vacuum of the plasma enhanced chemical vapor deposition reactor.
Claim 11
Dependent Claim
95 words
A fabrication process for fabricating a thin film semiconductor device having an underlevel protection layer formed on a portion of a substrate and a semiconductor film formed on said underlevel protection layer, the underlevel protection layer comprising an insulating material and the semiconductor film being an active layer of a transistor, the process comprising: forming the semiconductor film on top of said underlevel protection layer in a plasma enhanced chemical vapor deposition reactor; and then exposing said semiconductor film to a hydrogen plasma without breaking a vacuum of the plasma enhanced chemical vapor deposition reactor.
Claim 12
Dependent Claim
97 words
A fabrication process for fabricating a thin film semiconductor device having an underlevel protection layer formed on at least a portion of a substrate and a semiconductor film formed on said underlevel protection layer, the underlevel protection layer comprising an insulating material and the semiconductor film being an active layer of a transistor, the process comprising; forming the semiconductor film on top of said underlevel protection layer in a plasma enhanced chemical vapor deposition reactor, and then exposing said semiconductor film to an oxygen plasma without breaking a vacuum of the plasma enhanced chemical vapor deposition reactor.
Claim 13
Dependent Claim
97 words
A fabrication process for fabricating a thin film semiconductor device having an underlevel protection layer formed on at least a portion of a substrate and a semiconductor film formed on said underlevel protection layer, the underlevel protection layer comprising an insulating material and the semiconductor film being an active layer of a transistor, the process comprising; forming the semiconductor film on top of said underlevel protection layer in a plasma enhanced chemical vapor deposition reactor, and then exposing said semiconductor film to an oxygen plasma without breaking a vacuum of the plasma enhanced chemical vapor deposition reactor.
Claim 14
Dependent Claim
118 words
A fabrication process for fabricating a thin film semiconductor device having an underlevel protection layer formed on at least a portion of a substrate and a semiconductor film formed on said underlevel protection layer, the underlevel protection layer comprising an insulating material and the semiconductor film being an active layer of a transistor, the process comprising: forming the semiconductor film on top of said underlevel protection layer in a plasma enhanced chemical vapor deposition reactor; then exposing said semiconductor film to a hydrogen plasma without breaking a vacuum of the plasma enhanced chemical vapor deposition reactor, and then exposing said semiconductor film to an oxygen plasma without breaking the vacuum of the plasma enhanced chemical vapor deposition reactor.
Claim 15
Dependent Claim
118 words
A fabrication process for fabricating a thin film semiconductor device having an underlevel protection layer formed on at least a portion of a substrate and a semiconductor film formed on said underlevel protection layer, the underlevel protection layer comprising an insulating material and the semiconductor film being an active layer of a transistor, the process comprising: forming the semiconductor film on top of said underlevel protection layer in a plasma enhanced chemical vapor deposition reactor; then exposing said semiconductor film to a hydrogen plasma without breaking a vacuum of the plasma enhanced chemical vapor deposition reactor, and then exposing said semiconductor film to an oxygen plasma without breaking the vacuum of the plasma enhanced chemical vapor deposition reactor.
Claim 16
Dependent Claim
94 words
A fabrication process for fabricating a thin film semiconductor device having an underlevel protection layer formed on at least a portion of a substrate and a semiconductor film formed on said underlevel protection layer, the underlevel protection layer comprising an insulating material and the semiconductor film being an active layer of a transistor, the processing comprising: forming the semiconductor film on top of the underlevel protection layer; then removing an oxide layer from the surface of said semiconductor film and then melt crystallizing the semiconductor film immediately after the removal of the oxide layer.
Claim 17
Dependent Claim
94 words
A fabrication process for fabricating a thin film semiconductor device having an underlevel protection layer formed on at least a portion of a substrate and a semiconductor film formed on said underlevel protection layer, the underlevel protection layer comprising an insulating material and the semiconductor film being an active layer of a transistor, the processing comprising: forming the semiconductor film on top of the underlevel protection layer; then removing an oxide layer from the surface of said semiconductor film and then melt crystallizing the semiconductor film immediately after the removal of the oxide layer.
Claim 18
Dependent Claim
117 words
A fabrication process for fabricating a thin film semiconductor device having a semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrate, said semiconductor film being an active layer of a transistor the process comprising: depositing the semiconductor film using a low pressure chemical vapor deposition at a deposition temperature less than about 450° C.; irradiating said semiconductor film by one of optical and electromagnetic energy; and depositing a gate insulator layer after formation of said semiconductor film; wherein a deposition temperature of the gate insulator layer and a processing temperature following fabrication of the gate insulator layer are at or below 350° C.
Claim 19
Dependent Claim
117 words
A fabrication process for fabricating a thin film semiconductor device having a semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrate, said semiconductor film being an active layer of a transistor the process comprising: depositing the semiconductor film using a low pressure chemical vapor deposition at a deposition temperature less than about 450° C.; irradiating said semiconductor film by one of optical and electromagnetic energy; and depositing a gate insulator layer after formation of said semiconductor film; wherein a deposition temperature of the gate insulator layer and a processing temperature following fabrication of the gate insulator layer are at or below 350° C.
Claim 20
Dependent Claim
22 words
A fabrication process as described in claim 10, wherein the deposition temperature of the semiconductor film is about 430° C. or less.
Claim 21
Dependent Claim
111 words
A fabrication process for fabricating a thin film semiconductor device having a semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrate, said semiconductor film being an active layer of a transistor, the process comprising: forming the semiconductor film at a deposition temperature of about 350° C. or less; irradiating said semiconductor film by one of optical and electromagnetic energy; and depositing a gate insulator layer after formation of said semiconductor film; wherein a deposition temperature of the gate insulator layer and a processing temperature following fabrication of the gate insulator layer are at or below 350° C.
Claim 22
Dependent Claim
111 words
A fabrication process for fabricating a thin film semiconductor device having a semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrate, said semiconductor film being an active layer of a transistor, the process comprising: forming the semiconductor film at a deposition temperature of about 350° C. or less; irradiating said semiconductor film by one of optical and electromagnetic energy; and depositing a gate insulator layer after formation of said semiconductor film; wherein a deposition temperature of the gate insulator layer and a processing temperature following fabrication of the gate insulator layer are at or below 350° C.
Claim 23
Dependent Claim
20 words
A fabrication process as described in claim 12, wherein the semiconductor film is formed by plasma enhanced chemical vapor deposition.
Claim 24
Dependent Claim
16 words
A fabrication process as described in claim 12, wherein the semiconductor film is formed by sputtering.
Claim 25
Dependent Claim
76 words
A fabrication process for fabricating a thin film semiconductor device having a semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrates, said semiconductor film being an active layer of a transistor, the process comprising: fabricating the semiconductor film by very high frequency plasma enhanced chemical vapor deposition; and performing remaining processes at a maximum processing temperature of about 350° C. or less.
Claim 26
Dependent Claim
76 words
A fabrication process for fabricating a thin film semiconductor device having a semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrates, said semiconductor film being an active layer of a transistor, the process comprising: fabricating the semiconductor film by very high frequency plasma enhanced chemical vapor deposition; and performing remaining processes at a maximum processing temperature of about 350° C. or less.
Claim 27
Dependent Claim
23 words
A fabrication process as described in claim 15, wherein a thickness of said semiconductor film is between about 20 nm and 150 nm.
Claim 28
Dependent Claim
36 words
A fabrication process as described in claim 15, wherein the fabricating step comprises: using a chemical species containing constitutive elements of said semiconductor film for a source gas and a noble gas for a dilution gas.
Claim 29
Dependent Claim
23 words
A fabrication process as described in claim 17, wherein the chemical species containing the constitutive elements of the semiconductor film is a silane.
Claim 30
Dependent Claim
14 words
A fabrication process as described in claim 17 wherein the noble gas is helium.
Claim 31
Dependent Claim
14 words
A fabrication process as described in claim 17, wherein the noble gas is neon.
Claim 32
Dependent Claim
14 words
A fabrication process as described in claim 17 wherein the noble gas is argon.
Claim 33
Dependent Claim
77 words
A fabrication process for fabricating a thin film semiconductor device having a crystalline semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrate, said crystalline semiconductor film being an active layer of a transistor, the process comprising: fabricating the crystalline semiconductor film by microwave plasma enhanced chemical vapor deposition; and performing remaining processes at a maximum processing temperature of about 350° C. or less.
Claim 34
Dependent Claim
77 words
A fabrication process for fabricating a thin film semiconductor device having a crystalline semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrate, said crystalline semiconductor film being an active layer of a transistor, the process comprising: fabricating the crystalline semiconductor film by microwave plasma enhanced chemical vapor deposition; and performing remaining processes at a maximum processing temperature of about 350° C. or less.
Claim 35
Dependent Claim
25 words
A fabrication process as described in claim 22, wherein a film thickness of said crystalline semiconductor film is between about 20 nm and 150 nm.
Claim 36
Dependent Claim
36 words
A fabrication process as described in claim 22, wherein a chemical species containing constitutive elements of said crystalline semiconductor film is used as a source gas and a noble gas is used as a dilution gas.
Claim 37
Dependent Claim
24 words
A fabrication process as described in claim 24, wherein the chemical species containing the constitutive elements of the crystalline semiconductor film is a silane.
Claim 38
Dependent Claim
14 words
A fabrication process as described in claim 24, wherein the noble gas is helium.
Claim 39
Dependent Claim
14 words
A fabrication process as described in claim 24, wherein the noble gas is neon.
Claim 40
Dependent Claim
14 words
A fabrication process as described in claim 24 wherein the noble gas is argon.
Claim 41
Dependent Claim
80 words
A fabrication process for fabricating a thin film semiconductor device having a semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrate, said semiconductor film being an active layer of a transistor, the process comprising: fabricating the semiconductor film by very high frequency plasma enhanced chemical vapor deposition; crystallizing said semiconductor film; and performing remaining processes at a maximum processing temperature of about 350° C. or less.
Claim 42
Dependent Claim
80 words
A fabrication process for fabricating a thin film semiconductor device having a semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrate, said semiconductor film being an active layer of a transistor, the process comprising: fabricating the semiconductor film by very high frequency plasma enhanced chemical vapor deposition; crystallizing said semiconductor film; and performing remaining processes at a maximum processing temperature of about 350° C. or less.
Claim 43
Dependent Claim
24 words
A fabrication process as described in claim 29, wherein a film thickness of the semiconductor film is between about 10 nm and 150 nm.
Claim 44
Dependent Claim
40 words
A fabrication process as described in claim 29, wherein during the fabricating step, a chemical species containing constitutive elements of said crystalline semiconductor film is used as a source gas and a noble gas is used as a dilution gas.
Claim 45
Dependent Claim
23 words
A fabrication process as described in claim 31, wherein the chemical species containing the constitutive elements of the semiconductor film is a silane.
Claim 46
Dependent Claim
14 words
A fabrication process as described in claim 31, wherein the noble gas is helium.
Claim 47
Dependent Claim
14 words
A fabrication process as described in claim 31, wherein the noble gas is neon.
Claim 48
Dependent Claim
14 words
A fabrication process as described in claim 31, wherein the noble gas is argon.
Claim 49
Dependent Claim
82 words
A fabrication process for fabricating a thin film semiconductor device having a crystalline semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrate, said crystalline semiconductor film being an active layer of a transistor the process comprising: fabricating the crystalline semiconductor film by microwave plasma enhanced chemical vapor deposition; then crystallizing said semiconductor film; and performing remaining processes at a maximum processing temperature of about 350° C. or less.
Claim 50
Dependent Claim
82 words
A fabrication process for fabricating a thin film semiconductor device having a crystalline semiconductor film formed on an insulating material and the insulating material formed on at least a portion of a surface of a substrate, said crystalline semiconductor film being an active layer of a transistor the process comprising: fabricating the crystalline semiconductor film by microwave plasma enhanced chemical vapor deposition; then crystallizing said semiconductor film; and performing remaining processes at a maximum processing temperature of about 350° C. or less.
Claim 51
Dependent Claim
24 words
A process as described in claim 36, wherein a film thickness of the crystalline semiconductor film is between about 10 nm and 150 nm.
Claim 52
Dependent Claim
41 words
A fabrication process as described in claim 36 wherein during the fabricating step a chemical specie containing a constitutive elements of said crystalline semiconductor film is used as a source gas and a noble gas is used as a dilution gas.
Claim 53
Dependent Claim
24 words
A fabrication process as described in claim 38 wherein the chemical specie containing the constitutive elements of the crystalline semiconductor film is a silane.
Claim 54
Dependent Claim
14 words
A fabrication process as described in claim 38 wherein the noble gas is helium.
Claim 55
Dependent Claim
14 words
A fabrication process as described in claim 38 wherein the noble gas is neon.
Claim 56
Dependent Claim
14 words
A fabrication process as described in claim 38, wherein the noble gas is argon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-01-24 | 2003-07-26 | 2004-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-24 | 2007-07-26 | 2008-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-24 | 2011-07-26 | 2012-01-25 | $7700.00 | Window Closed / Lapsed |