EP0562623A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacturing non-single crystal film and non-single crystal semiconductor device
Assignee: Canon Inc
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Filing: 1993-03-26
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Granted: —
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Expires: 2013-03-26
Abstract
Abstract A method of manufacturing an amorphous silicon thin film exhibiting excellent quality for use in a TFT, a photosensor or a solar cell at a low cost by a plasma CVD method utilizing high frequency discharge, the method being consisting of steps of using a silicon compound such as SiH 4 as raw material gas, making the frequency f (MHz) of a high frequency power source to be 30 MHz or higher, and applying negative voltage to an electrode of a substrate if necessary. Furthermore, it is preferably that the relationship between the distance d (cm) between electrodes and the frequency f (MHz) of the high frequency power source satisfies f/d < 30 .
Inventors
- 👤 Chiori c/o Canon Kabushiki Kaisha Mochizuki
- 👤 Hidemasa C/O Canon Kabushiki Kaisha Mizutani
- 👤 Tatsumi c/o Canon Kabushiki Kaisha Shouji
- 👤 Kazuaki c/o Canon Kabushiki Kaisha Tashiro
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:38
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6732; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10F; H10F71/00; H10F71/10; H10F71/103; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 47
Claim 1
Independent Claim
101 words
A method of manufacturing a non-single-crystal film by a plasma CVD method that utilizes a high frequency discharge, said method comprising the steps of: using at least silicon gas as a raw material gas; setting film forming pressure P (Torr) to a level from 0.25 Torr to 2.5 Torr; setting frequency f (MHz) of said high frequency power source to a value from 30 MHz to 120 MHz; making supplied electric power P W (W/cm²) to be smaller than a value defined by 10/f (MHz); and making distance d (cm) between electrodes to be larger than a value defined by f/30.
Claim 2
Dependent Claim
20 words
A method of manufacturing a non-single-crystal film according to claim 1, wherein said non-single-crystal film is an amorphous silicon film.
Claim 3
Independent Claim
147 words
A method of manufacturing a non-single-crystal film by a plasma CVD method that utilizes a high frequency discharge, said method comprising the steps of: using at least silicon gas as a raw material gas; setting film forming pressure P (Torr) to a level from 0.25 Torr to 2.5 Torr; setting frequency f (MHz) of said high frequency power source to a value from 30 MHz to 120 MHz; making supplied electric power P W (W/cm²) to be smaller than a value defined by 10/f (MHz); making distance d (cm) between electrodes to be larger than a value defined by f/30; and making residence time τ (sec) to be from 0.05 sec to 2.5 sec assuming that said residence time τ for which raw material gas Q (sccm) is retained in discharge space V (cm³) is defined as τ = 78.947 x 10⁻³ x V x P/Q .
Claim 4
Dependent Claim
20 words
A method of manufacturing a non-single-crystal film according to claim 3, wherein said non-single-crystal film is an amorphous silicon film.
Claim 5
Independent Claim
66 words
A method of manufacturing a non-single-crystal film by depositing said non-single crystal film by using gas containing Si by a plasma CVD method, said method comprising the step of: applying VHF waves having frequency f higher than 30 MHz by electric power of 1/f (W/cm²) (f: MHz) or more to meet f/d < 30 assuming that the distance between electrodes is d (cm) to generate plasma.
Claim 6
Dependent Claim
34 words
A method of manufacturing a non-single-crystal film according to claim 5, wherein gas containing boron, gas containing phosphorus and gas containing arsenic are used as impurity gas with respect to said gas containing Si.
Claim 7
Dependent Claim
37 words
A method of manufacturing a non-single-crystal film according to claim 5, wherein the ratio of the light intensity [H*] of a hydrogen radical and the light intensity [SiH*] of a silane radical is [H*]/[SiH*] ≧ 1 .
Claim 8
Dependent Claim
20 words
A method of manufacturing a non-single-crystal film according to claim 5, wherein said non-single-crystal film is a microcrystal silicon film.
Claim 9
Dependent Claim
20 words
A method of manufacturing a non-single-crystal film according to claim 6, wherein said non-single-crystal film is a microcrystal silicon film.
Claim 10
Dependent Claim
20 words
A method of manufacturing a non-single-crystal film according to claim 7, wherein said non-single-crystal film is a microcrystal silicon film.
Claim 11
Independent Claim
57 words
A method of manufacturing a non-single-crystal film by depositing said non-single crystal film by using gas containing Si by a plasma chemical vapor phase method, said method comprising the steps of: maintaining substrate temperature Ts at a level from 300°C to 600°C; and supplying VHF waves having frequency f of 30 MHz or higher to generate plasma.
Claim 12
Dependent Claim
49 words
A method of manufacturing a non-single-crystal film according to claim 11, wherein said VHF waves are so supplied that substrate temperature Ts (°C) and said high frequency f (MHz) satisfy a relationship Ts = kf + a (0 1 ≦ k ≦ 2, a = 300) to generate plasma.
Claim 13
Dependent Claim
33 words
A method of manufacturing a non-single-crystal film according to claim 11, wherein said VHF waves having said high frequency f are supplied by electric power of 10/f (W/cm2) (f: MHz) to generate plasma.
Claim 14
Dependent Claim
37 words
A method of manufacturing a non-single-crystal film according to claim 11, wherein the ratio of the light intensity [H*] of a hydrogen radical and the light intensity [SiH*] of a silane radical is [H*]/[SiH*] ≦ 1 .
Claim 15
Dependent Claim
22 words
A method of manufacturing a non-single-crystal film according to claim 11, wherein distance d between electrodes satisfies a relationship f/d < 30.
Claim 16
Dependent Claim
36 words
A method of manufacturing a non-single-crystal film according to claim 11, wherein said non-single-crystal film is at least a film selected from a group consisting of an amorphous silicon film and an amorphous silicon nitride film.
Claim 17
Dependent Claim
36 words
A method of manufacturing a non-single-crystal film according to claim 12, wherein said non-single-crystal film is at least a film selected from a group consisting of an amorphous silicon film and an amorphous silicon nitride film.
Claim 18
Dependent Claim
36 words
A method of manufacturing a non-single-crystal film according to claim 13, wherein said non-single-crystal film is at least a film selected from a group consisting of an amorphous silicon film and an amorphous silicon nitride film.
Claim 19
Dependent Claim
36 words
A method of manufacturing a non-single-crystal film according to claim 14, wherein said non-single-crystal film is at least a film selected from a group consisting of an amorphous silicon film and an amorphous silicon nitride film.
Claim 20
Dependent Claim
36 words
A method of manufacturing a non-single-crystal film according to claim 15, wherein said non-single-crystal film is at least a film selected from a group consisting of an amorphous silicon film and an amorphous silicon nitride film.
Claim 21
Dependent Claim
20 words
A method of manufacturing a non-single-crystal film according to claim 16, wherein said applied frequency is 120 MHz or lower.
Claim 22
Dependent Claim
28 words
A method of manufacturing a non-single-crystal film according to claim 16, wherein said film is formed by a film forming pressure of from 0.25 Torr to 2.5 Torr.
Claim 23
Dependent Claim
55 words
A method of manufacturing a non-single-crystal film according to claim 16, wherein, assuming that residence time τ (sec) for which raw material gas Q (sccm) is retained in discharge space V (cm³) is τ = 78.947 x 10⁻³ x V x P/Q , said residence time τ is ranged from 0.05 sec to 2.5 sec.
Claim 24
Independent Claim
72 words
A method of manufacturing a non-single-crystal film by a plasma CVD method utilizing high frequency discharge, said method comprising the steps of: providing silicon compound gas as raw material gas; making frequency f (MHz) of a high frequency power source to be 30 MHz or higher; and applying voltage to an electrode of a substrate in such a manner that the surface of said substrate is made to be a negative potential.
Claim 25
Dependent Claim
40 words
A method of manufacturing a non-single-crystal film by a plasma CVD method according to claim 24, wherein the relationship between distance d (cm) between electrodes and frequency f (MHZ) of said high frequency power source satisfies f/d < 30 .
Claim 26
Dependent Claim
42 words
A method of manufacturing a non-single-crystal film by a plasma CVD method according to claim 24, wherein the relationship between distance d (cm) between electrodes and applied voltage Vb (v) to said electrode of said substrate satisfies Vb/d ≧ -12 (v/cm) .
Claim 27
Dependent Claim
26 words
A method of manufacturing a non-single-crystal film by a plasma CVD method according to claim 24, wherein said single crystal film is an amorphous silicon film.
Claim 28
Dependent Claim
26 words
A method of manufacturing a non-single-crystal film by a plasma CVD method according to claim 25, wherein said single crystal film is an amorphous silicon film.
Claim 29
Dependent Claim
26 words
A method of manufacturing a non-single-crystal film by a plasma CVD method according to claim 26, wherein said single crystal film is an amorphous silicon film.
Claim 30
Dependent Claim
31 words
A method of manufacturing a non-single-crystal film by a plasma CVD method according to claim 25, wherein said frequency f of said high frequency power source is 120 MHz or lower.
Claim 31
Dependent Claim
33 words
A method of manufacturing a non-single-crystal film by a plasma CVD method according to claim 29, wherein said frequency f of said high frequency power source is from 50 MHz to 100 MHz.
Claim 32
Independent Claim
65 words
A method of manufacturing a non-single-crystal film for depositing an amorphous silicon nitride film by a plasma CVD method by using mixture gas of at least gas containing Si and nitrogen gas, said method comprising the step of: applying VHF waves having frequency f higher than 30 MHz to meet f/d < 30 assuming that the distance between electrodes is d (cm) to generate plasma.
Claim 33
Dependent Claim
28 words
A method of manufacturing a non-single-crystal film according to claim 32, wherein said mixture gas of at least gas containing Si, hydrogen gas and nitrogen gas is used.
Claim 34
Dependent Claim
28 words
A method of manufacturing a non-single-crystal film according to claim 32, wherein said mixture gas of at least gas containing Si and F and nitrogen gas is used.
Claim 35
Dependent Claim
30 words
A method of manufacturing a non-single-crystal film according to claim 32, wherein said mixture gas of at least gas containing Si and F, hydrogen gas and nitrogen gas is used.
Claim 36
Independent Claim
72 words
A method of manufacturing a non-single-crystal film for depositing amorphous silicon nitride film by a plasma CVD method by using mixture gas containing at least a silicon compound and ammonia as raw material gas, said method comprising the step of: applying VHF waves having frequency f higher than 30 MHz and lower than 120 MHz to meet f/d < 30 assuming that the distance between electrodes is d (cm) to generate plasma.
Claim 37
Dependent Claim
30 words
A method of manufacturing a non-single-crystal film according to claim 36, wherein said method of manufacturing said non-single-crystal film is used in a stacked structure with an amorphous silicon film.
Claim 38
Dependent Claim
30 words
A method of manufacturing a non-single-crystal film according to claim 8, wherein said non-single-crystal film has a compressive stress of from 1 x 10⁹ dyn/cm² to 4 x 10⁹ dyn/cm².
Claim 39
Dependent Claim
21 words
A non-single-crystal semiconductor apparatus comprising said non-single-crystal film manufactured by said method of manufacturing said non-single-crystal film according to claim 1.
Claim 40
Dependent Claim
28 words
A non-single-crystal semiconductor apparatus according to claim 39, wherein said non-single-crystal semiconductor apparatus is selected from a group consisting of a transistor, a photosensor, and a photovolatic device.
Claim 41
Dependent Claim
28 words
A non-single-crystal semiconductor apparatus comprising a non-single-crystal semiconductor layer manufactured by a plasma CVD method utilizing high frequency discharge using frequency ranged from 30 MHz to 120 MHz.
Claim 42
Dependent Claim
53 words
A non-single-crystal semiconductor apparatus according to claim 41, wherein at least a gate electrode, a gate insulating layer, a non-single-crystal semiconductor layer and a pair of source and drain electrode are disposed on a substrate, and an ohmic contact layer is formed between said non-single-crystal semiconductor layer and said source and drain electrode.
Claim 43
Dependent Claim
33 words
A non-single-crystal semiconductor apparatus according to claim 42, wherein said gate insulating layer is manufactured by a plasma CVD method utilizing high frequency discharge, the frequency of which is 30 MHz or higher.
Claim 44
Dependent Claim
33 words
A non-single-crystal semiconductor apparatus according to claim 42, wherein said ohmic contact layer is manufactured by a plasma CVD method utilizing high frequency discharge, the frequency of which is 30 MHz or higher.
Claim 45
Dependent Claim
34 words
A non-single-crystal semiconductor apparatus according to claim 42, wherein at least said gate insulating layer, said non-single-crystal semiconductor layer and said ohmic contact layer are not opened in the atmosphere but are formed sequentially.
Claim 46
Dependent Claim
27 words
A non-single-crystal semiconductor apparatus comprising a protection layer manufactured by a plasma CVD method utilizing high frequency discharge, the frequency of which is 30 MHz or higher.
Claim 47
Dependent Claim
18 words
A non-single-crystal semiconductor apparatus according to claim 46, wherein said protection layer is an amorphous silicon nitride film.
References Cited (Backward Citations)
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