US5488000A
Expired / Lapsed
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Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-06-14
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Granted: 1996-01-30
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Expires: 2014-06-14
Abstract
Abstract Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline silicon film having excellent crystailinity is obtained. TFTs are built, using this crystalline silicon film.
Inventors
- 👤 Hongyong Zhang
- 👤 Satoshi Teramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:30
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10D; H10D86/00; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D86/40; H10D86/60; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3806; H10P14/3808; H10P14/3816; Y; Y10; Y10S; Y10S148/00; Y10S148/016; Y10S148/154
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
77 words
A method of fabricating a semiconductor device comprising the steps of: forming a non-single crystal semiconductor film on a substrate; forming an insulating film on the semiconductor film; patterning the semiconductor film and the insulating forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film; and starting the crystallization from the side of the patterned semiconductor film.
Claim 2
Independent Claim
77 words
A method of fabricating a semiconductor device comprising the steps of: forming a non-single crystal semiconductor film on a substrate; forming an insulating film on the semiconductor film; patterning the semiconductor film and the insulating forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film; and starting the crystallization from the side of the patterned semiconductor film.
Claim 3
Dependent Claim
31 words
The method of claim 1 wherein after the crystallization, the film containing the metal element is removed to obtain a crystalline silicon film comprising a crystal grown parallel to the substrate.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein a thin-film transistor is fabricated, using the semiconductor film crystallized.
Claim 5
Dependent Claim
24 words
The method of claim 3 wherein source/drain regions of the thin-film transistor are formed substantially along a direction in which a crystal is grown.
Claim 6
Dependent Claim
49 words
The method of claim 1 further comprising the steps of: removing a portion in which a crystal is started to be grown and a portion in which the crystal ceases to grow; and fabricating the semiconductor device, using a region lightly doped with the metal element for promoting crystallization.
Claim 7
Dependent Claim
16 words
The method of claim 1 wherein the non-single crystal semiconductor film is an amorphous silicon film.
Claim 8
Dependent Claim
12 words
The method of claim 1 wherein the insulating film comprises silicon oxide.
Claim 9
Dependent Claim
15 words
The method of claim 1 wherein the film containing the metal element comprises nickel silicide.
Claim 10
Independent Claim
82 words
A method of fabricating a semiconductor device comprising the steps of: forming a non-single crystal semiconductor film on a substrate; forming an insulating film on the semiconductor film; patterning the semiconductor film and the insulating forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film; and heating the patterned semiconductor film after the forming step of the film containing the metal element.
Claim 11
Independent Claim
82 words
A method of fabricating a semiconductor device comprising the steps of: forming a non-single crystal semiconductor film on a substrate; forming an insulating film on the semiconductor film; patterning the semiconductor film and the insulating forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film; and heating the patterned semiconductor film after the forming step of the film containing the metal element.
Claim 12
Dependent Claim
15 words
The method of claim 9 wherein the patterned semiconductor film is crystallized by the heating.
Claim 13
Dependent Claim
16 words
The method of claim 9 wherein the non-single crystal semiconductor film is an amorphous silicon film.
Claim 14
Dependent Claim
12 words
The method of claim 9 wherein the insulating film comprises silicon oxide.
Claim 15
Dependent Claim
15 words
The method of claim 9 wherein the film containing the metal element comprises nickel silicide.
Claim 16
Independent Claim
135 words
A method of fabricating a transistor comprising the steps of: semiconductor film on a forming a non-single crystal substrate; forming an insulating film on the semiconductor film; patterning the semiconductor film and the insulating film; forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film; starting the crystallization from the side of the patterned semiconductor film; removing a part of the patterned semiconductor film which is in contact with said film containing said metal element after the crystallization; removing another part of the patterned semiconductor film which contains a front end of crystal growth of the crystallization; and forming a transistor comprising a semiconductor region provided in the other part of the patterned semiconductor film.
Claim 17
Independent Claim
135 words
A method of fabricating a transistor comprising the steps of: semiconductor film on a forming a non-single crystal substrate; forming an insulating film on the semiconductor film; patterning the semiconductor film and the insulating film; forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film; starting the crystallization from the side of the patterned semiconductor film; removing a part of the patterned semiconductor film which is in contact with said film containing said metal element after the crystallization; removing another part of the patterned semiconductor film which contains a front end of crystal growth of the crystallization; and forming a transistor comprising a semiconductor region provided in the other part of the patterned semiconductor film.
Claim 18
Independent Claim
85 words
A method of fabricating a semiconductor device comprising the steps of: forming a non-single crystal semiconductor film on a substrate; forming an insulating film on the semiconductor film; patterning the semiconductor film and the insulating film; forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film; and starting the crystallization from the side of the patterned semiconductor film in a direction parallel to the substrate.
Claim 19
Independent Claim
85 words
A method of fabricating a semiconductor device comprising the steps of: forming a non-single crystal semiconductor film on a substrate; forming an insulating film on the semiconductor film; patterning the semiconductor film and the insulating film; forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film; and starting the crystallization from the side of the patterned semiconductor film in a direction parallel to the substrate.
Claim 20
Independent Claim
99 words
A method of fabricating a semiconductor device comprising the steps of: forming a non-single crystal semiconductor film on a substrate; forming an insulating film on the semiconductor film; patterning the semiconductor film and the insulating film; forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film; and heating the patterned semiconductor film after the forming step of the film containing the metal element to cause crystal growth of the patterned semiconductor film in a direction parallel to the substrate.
Claim 21
Independent Claim
99 words
A method of fabricating a semiconductor device comprising the steps of: forming a non-single crystal semiconductor film on a substrate; forming an insulating film on the semiconductor film; patterning the semiconductor film and the insulating film; forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film; and heating the patterned semiconductor film after the forming step of the film containing the metal element to cause crystal growth of the patterned semiconductor film in a direction parallel to the substrate.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1999-01-29 | 1999-07-31 | 2000-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-29 | 2003-07-31 | 2004-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-29 | 2007-07-31 | 2008-01-30 | $7700.00 | Window Closed / Lapsed |