US5318661A
Expired / Lapsed
US
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Process for growing crystalline thin film
Assignee: Canon Inc
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Filing: 1992-12-10
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Granted: 1994-06-07
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Expires: 2012-12-10
Abstract
Abstract A process for growing a crystalline thin film comprises forming a crystalline region comprising a single crystal-nucleus or crystal-grain at a predetermined position of an amorphous thin film, then implanting ions of at least one element constituting the amorphous thin film into a region other than the crystalline region and thereafter carrying out heat treatment to have the crystal-nucleus or crystal-grain grown along the plane direction of the amorphous thin film, thereby crystallizing the amorphous film by solid phase growth.
Inventors
- 👤 Hideya Kumomi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 10:46
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; C30B1/023; C30B29/00; C30B29/02; C30B29/06; Y; Y10; Y10S; Y10S117/00; Y10S117/913
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
91 words
A process for growing a crystalline thin film, which comprises: (a) forming a crystal-forming region comprising a single crystal-nucleus or crystal-grain at a selected position of an amorphous thin film; (b) conducting a first heat-treating to crystallize the amorphous thin film based on the single crystal-nucleus or the crystal-grain; (c) implanting ions of at least one element constituting the amorphous thin film into a region other than the crystal-forming region to prevent generation of any additional single crystal-nucleus; and (d) thereafter conducting a second heat-treating to grow the crystalline thin film.
Claim 2
Dependent Claim
91 words
A process for growing a crystalline thin film, which comprises: (a) forming a crystal-forming region comprising a single crystal-nucleus or crystal-grain at a selected position of an amorphous thin film; (b) conducting a first heat-treating to crystallize the amorphous thin film based on the single crystal-nucleus or the crystal-grain; (c) implanting ions of at least one element constituting the amorphous thin film into a region other than the crystal-forming region to prevent generation of any additional single crystal-nucleus; and (d) thereafter conducting a second heat-treating to grow the crystalline thin film.
Claim 3
Dependent Claim
21 words
The process according to claim 1, wherein said ion implantation and said second heat treatment are carried out for plural times.
Claim 4
Dependent Claim
29 words
The process according to claim 1, wherein said amorphous thin film has a region with a difference in film thickness, and said crystal-forming region is formed in said region.
Claim 5
Dependent Claim
24 words
The process according to claim 1, wherein crystalline in said second heat-treating is effected while giving a temperature distribution to said amorphous thin film.
Claim 6
Dependent Claim
13 words
The process according to claim 1, wherein said amorphous thin film comprises silicon.
Claim 7
Dependent Claim
27 words
The process according to claim 5, wherein said ions are silicon ions and 1×10 14 to 1×10 16 ions·cm -2 are implanted at 50 to 150 keV.
Claim 8
Dependent Claim
19 words
The process according to claim 5, wherein said second heat treatment is carried out at 500° to 700° C.
Claim 9
Dependent Claim
13 words
The process according to claim 1, wherein said amorphous thin film comprises germanium.
Claim 10
Dependent Claim
27 words
The process according to claim 8, wherein said ions are germanium ions and 5×10 14 to 5×10 16 ions·cm -2 are implanted at 50 to 200 keV.
Claim 11
Dependent Claim
19 words
The process according to claim 8, wherein said second heat treatment is carried out at 300° to 500° C.
Claim 12
Dependent Claim
13 words
The process according to claim 1, wherein said amorphous thin film comprises gallium-arsenic.
Claim 13
Dependent Claim
28 words
The process according to claim 11, wherein said ions are gallium and ions and 1×10 15 to 5×10 16 ions·cm -2 are implanted at 200 to 400 keV.
Claim 14
Dependent Claim
19 words
The process according to claim 11, wherein said second heat treatment is carried out at 400° to 600° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-06 | 1997-12-06 | 1998-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-06 | 2001-12-06 | 2002-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-06 | 2005-12-06 | 2006-06-07 | $7700.00 | Window Closed / Lapsed |