EP0306154A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Crystal article, method for producing the same and semiconductor device utilizing the same
Assignee: Canon Inc
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Filing: 1988-08-05
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Granted: —
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Expires: 2008-08-05
Abstract
Abstract A crystal article comprises a substrate having an insulating amorphous surface and monocrystal formed on the substrate. The monocrystal is formed by providing a primary seed in the form of a film with an area 100 µm² or less arranged in a desired pattern on the surface of the substrate acting as a non-nucleation surface with a small nucleation density, then subjecting the primary seed to thermal treatment to convert it to a monocrystalline seed, and subsequently subjecting the monocrystalline seed to crystal growth treatment to allow a monocrystal to grow beyond the monocrystalline seed and cover the non-nucleation surface.
Inventors
- 👤 Takao Yonehara
- 👤 Kenji Canon Daini Honatsugiryo Yamagata
- 👤 Yuji Nishigaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 19:53
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2923; C; C30; C30B; C30B25/00; C30B25/02; C30B25/16; H10P14/24; H10P14/27; H10P14/271; H10P14/274; H10P14/276; H10P14/2921; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S117/00; Y10S117/913
Claims Analysis
Total Claims: 47
Claim 1
Independent Claim
102 words
A crystal article comprising a substrate having an insulating amorphous surface and a monocrystal formed on said substrate, said monocrystal being formed by providing a primary seed in the form of a film with an area of 100 µm² or less arranged in a desired pattern on the surface of said substrate acting as a non-nucleation surface with a small nucleation density, then subjecting said primary seed to thermal treatment to convert it to a monocrystalline seed, and subsequently subjecting said monocrystalline seed to crystal growth treatment to allow a monocrystal to grow beyond said monocrystalline seed and cover said non-nucleation surface.
Claim 2
Dependent Claim
102 words
A crystal article comprising a substrate having an insulating amorphous surface and a monocrystal formed on said substrate, said monocrystal being formed by providing a primary seed in the form of a film with an area of 100 µm² or less arranged in a desired pattern on the surface of said substrate acting as a non-nucleation surface with a small nucleation density, then subjecting said primary seed to thermal treatment to convert it to a monocrystalline seed, and subsequently subjecting said monocrystalline seed to crystal growth treatment to allow a monocrystal to grow beyond said monocrystalline seed and cover said non-nucleation surface.
Claim 3
Dependent Claim
139 words
2 . A crystal article comprising a substrate having an insulating amorphous surface and a monocrystal formed on said substrate, said monocrystal being formed by providing a primary seed in the form of a minute polycrystalline or amorphous film with an area of 16 µm² or less arranged in a desired pattern on the surface of said substrate acting as a non-nucleation surface with a small nucleation density as compared with the surface of the monocrystalline seed mentioned below, then subjecting said primary seed to thermal treatment to convert it to a monocrystalline seed with a face defect density of 10⁵/cm² or less as determined by the transmission electron microscope observation, and subsequently subjecting said monocrystalline seed to crystal growth treatment to allow a monocrystal to grow from then beyond said monocrystalline seed and eventually cover said non-nucleation surface.
Claim 4
Dependent Claim
139 words
2 . A crystal article comprising a substrate having an insulating amorphous surface and a monocrystal formed on said substrate, said monocrystal being formed by providing a primary seed in the form of a minute polycrystalline or amorphous film with an area of 16 µm² or less arranged in a desired pattern on the surface of said substrate acting as a non-nucleation surface with a small nucleation density as compared with the surface of the monocrystalline seed mentioned below, then subjecting said primary seed to thermal treatment to convert it to a monocrystalline seed with a face defect density of 10⁵/cm² or less as determined by the transmission electron microscope observation, and subsequently subjecting said monocrystalline seed to crystal growth treatment to allow a monocrystal to grow from then beyond said monocrystalline seed and eventually cover said non-nucleation surface.
Claim 5
Dependent Claim
20 words
A crystal article as defined in claim 1 or 2, wherein said monocrystalline seed is arranged plurally on said substrate.
Claim 6
Dependent Claim
20 words
A crystal article as defined in claim 3, wherein said monocrystalline seed is arranged with regionalization on said non-nucleation surface.
Claim 7
Dependent Claim
21 words
A crystal article as defined in claim 4, wherein said monocrystalline seed is arranged with regular regionalization on said non-nucleation surface.
Claim 8
Dependent Claim
21 words
A crystal article as defined in claim 4, wherein said monocrystalline seed is arranged with irregular regionalization on said non-nucleation surface.
Claim 9
Dependent Claim
28 words
A crystal article as defined in any of claims 3 - 6, wherein neighboring monocrystals growing from said monocrystalline seeds arranged plurally are in contact with each other.
Claim 10
Dependent Claim
28 words
A crystal article as defined in any of claims 3 - 7, wherein neighboring monocrystals growing from said monocrystalline seeds arranged plurally are spatially departed from each other.
Claim 11
Dependent Claim
72 words
A crystal article as defined in any of claims 1 - 8, wherein (a) said monocrystalline seed is of Si or Ge; and/or (b) said monocrystal is Si, Ge, GaAs or GaAlAs; and/or (c) said substrate acting as a non-nucleation surface is either of silicon oxide, glass or quartz or is of metal, semiconductor, magnetic, piezoelectric or insulator and bears a silicon oxide, NSG or PSG film formed on the surface thereof.
Claim 12
Dependent Claim
102 words
A process for producing a crystal article comprising a substrate having an insulating amorphous surface and a monocrystal formed on said substrate, which comprises preparing a substrate having a non-nucleation surface with a small nucleation density, providing a primary seed in the form of a film with an area of 100 µm² or less arranged in a desired pattern on said substrate, then subjecting said primary seed to thermal treatment to convert it to a monocrystalline seed, and subsequently subjecting said monocrystalline seed to crystal growth treatment to allow a monocrystal to grow beyond said monocrystalline seed and cover said non-nucleation surface.
Claim 13
Dependent Claim
102 words
A process for producing a crystal article comprising a substrate having an insulating amorphous surface and a monocrystal formed on said substrate, which comprises preparing a substrate having a non-nucleation surface with a small nucleation density, providing a primary seed in the form of a film with an area of 100 µm² or less arranged in a desired pattern on said substrate, then subjecting said primary seed to thermal treatment to convert it to a monocrystalline seed, and subsequently subjecting said monocrystalline seed to crystal growth treatment to allow a monocrystal to grow beyond said monocrystalline seed and cover said non-nucleation surface.
Claim 14
Dependent Claim
142 words
11 . A process for producing a crystal article comprising a substrate having an insulating amorphous surface and a monocrystal formed on said substrate, which comprises preparing a substrate having a non-nucleation surface with a small nucleation density as compared with the surface of the monocrystalline seed mentioned below, providing a primary seed in the form of a minute polycrystalline or amorphous film with an area of 16 µm² or less arranged in a desired pattern on the surface of said substrate, then subjecting said primary seed to thermal treatment to convert it to a monocrystalline seed with a face defect density of 10⁵/cm² or less as determined by the transmission electron microscope observation, and subsequently subjecting said monocrystalline seed to crystal growth treatment to allow a monocrystal to grow from then beyond said monocrystalline seed and eventually cover said non-nucleation surface.
Claim 15
Dependent Claim
142 words
11 . A process for producing a crystal article comprising a substrate having an insulating amorphous surface and a monocrystal formed on said substrate, which comprises preparing a substrate having a non-nucleation surface with a small nucleation density as compared with the surface of the monocrystalline seed mentioned below, providing a primary seed in the form of a minute polycrystalline or amorphous film with an area of 16 µm² or less arranged in a desired pattern on the surface of said substrate, then subjecting said primary seed to thermal treatment to convert it to a monocrystalline seed with a face defect density of 10⁵/cm² or less as determined by the transmission electron microscope observation, and subsequently subjecting said monocrystalline seed to crystal growth treatment to allow a monocrystal to grow from then beyond said monocrystalline seed and eventually cover said non-nucleation surface.
Claim 16
Dependent Claim
35 words
A process for producing a crystal article as defined in claim 10 or 11, wherein said primary seed is a polycrystalline film having a surface with a controlled crystal face orientation and a minute area.
Claim 17
Dependent Claim
24 words
A process for producing a crystal article as defined in claim 10 or 11, wherein said monocrystalline seed is arranged plurally on said substrate.
Claim 18
Dependent Claim
26 words
A process for producing a crystal article as defined in claim 10 or 11, wherein said monocrystalline seed is arranged with regionalization on said non-nucleation surface.
Claim 19
Dependent Claim
25 words
A process for producing a crystal article as defined in claim 14, wherein said monocrystalline seed is arranged with regular regionalization on said non-nucleation surface.
Claim 20
Dependent Claim
25 words
A process for producing a crystal article as defined in claim 14, wherein said monocrystalline seed is arranged with irregular regionalization on said non-nucleation surface.
Claim 21
Dependent Claim
37 words
A process for producing a crystal article as defined in any of claims 10 16, wherein said monocrystalline seed is arranged on a planar non-nucleation surface or is arranged in a recess formed in said non-nucleation surface.
Claim 22
Dependent Claim
40 words
A process for producing a crystal article as defined in any of claims 10 - 17, wherein the surface has a plurality of monocrystals grown from the monocrystals seeds and neighbouring monocrystalline seeds have grown into contact with each other.
Claim 23
Dependent Claim
38 words
A process for producing a crystal article as defined in anY of claims 10 - 17, wherein the surface has a plurality of monocrystals grown from said monocrystalline seeds and neighbouring monocrystals are spaced apart on the surface.
Claim 24
Dependent Claim
84 words
A process for producing a crystal article as defined in any of claims 10 - 19, wherein (a) said monocrystalline seed is of Si or Ge and/or (b) said monocrystal is of Si, Ge and/or (c) said monocrystal is of Si, Ge, GaAs or GaAlAs and/or (d) said substrate having a non-nucleation surface is either of silicon oxide, glass or quartz or is of metal, semiconductor, magnetic, piezoelectric or insulator and bears a silicon oxide, NSG or PSG film formed on the surface thereof.
Claim 25
Dependent Claim
49 words
A process for producing a crystal article as defined in claim 10 or 11, wherein said primary seed is doped with impurity, for example (a) a Group III impurity such as B, Al, Ga, In, Tl or (b) a Group V impurity such as P, As, Sb, Bi, etc.
Claim 26
Dependent Claim
28 words
A process for producing a crystal article as defined in any of claims 10 - 21, wherein said crystal growth treatment is the CVD, LPE, or MOCVD method.
Claim 27
Dependent Claim
48 words
A process for producing a crystal article as defined in claim 12, wherein (a) said primary seed is polycrystalline Ge and the temperature of thermal treatment is 600 - 900°C or (b) said primary seed is polycrystalline Si and the temperature of thermal treatment is 800 - 1100°C.
Claim 28
Dependent Claim
31 words
24 . A process for producing a crystal article as defined in any of claims 10 - 23, wherein the film thickness of said monocrystalline seed is 1 µm or less.
Claim 29
Dependent Claim
26 words
A process for producing a crystal article as defined in claim 12 , wherein the film thickness of said primary seed is 1 µm or less.
Claim 30
Dependent Claim
24 words
A process for producing a crystal article as defined in claim 12, wherein the maximum length of said seed is 10 µm or less.
Claim 31
Dependent Claim
39 words
A process for producing a crystal article as defined in any of claims 10 - 26, wherein said substrate has a recess of a desired size and said monocrystalline seed is provided on the non-nucleation surface within said recess.
Claim 32
Dependent Claim
33 words
A process for producing a crystal article as defined in any of claims 10 - 27, wherein a gas for preventing the nucleation on said non-nucleation surface is supplied during crystal forming treatment.
Claim 33
Dependent Claim
19 words
29 . A process for producing a crystal article as defined in claim 28, wherein said gas is HCl.
Claim 34
Dependent Claim
26 words
A process for producing a crystal article as defined in claims 11 and 12, wherein the maximum length of said seed is 4 µm or less.
Claim 35
Dependent Claim
56 words
31 . A process for forming a crystal, which comprises providing a minute amorphous material to constitute a seed for crystal growth on a non-nucleation surface with a small nucleation density, then subjecting said amorphous material to thermal treatment to convert it to a monocrystalline seed, and subsequently allowing a monocrystal to grow from said seed.
Claim 36
Dependent Claim
56 words
31 . A process for forming a crystal, which comprises providing a minute amorphous material to constitute a seed for crystal growth on a non-nucleation surface with a small nucleation density, then subjecting said amorphous material to thermal treatment to convert it to a monocrystalline seed, and subsequently allowing a monocrystal to grow from said seed.
Claim 37
Dependent Claim
21 words
32 . A process for forming a crystal as defined in claim 31, wherein said amorphous material is doped with impurity.
Claim 38
Dependent Claim
24 words
A process for forming a crystal as defined in claim 31 or 32, wherein the material of said non-nucleation surface is an amorphous insulator.
Claim 39
Dependent Claim
30 words
34 . A process for forming a crystal as defined in any of claims 31 - 33, wherein said amorphous material is arranged plurally with regionalization on said non-nucleation surface.
Claim 40
Dependent Claim
106 words
A semiconductor device comprising a substrate having an insulating amorphous surface and a monocrystal formed on said substrate and provided with an active region in said monocrystal, said monocrystal being formed by providing a primary seed in the form of a film with an area of 100 µm² or less arranged in a desired pattern on the surface of said substrate acting as a non-nucleation surface, then subjecting said primary seed to thermal treatment to convert it to a monocrystalline seed, and subsequently subjecting said monocrystalline seed to crystal growth treatment to allow a monocrystal to grow beyond said monocrystallie seed and cover said non-nucleation surface.
Claim 41
Dependent Claim
106 words
A semiconductor device comprising a substrate having an insulating amorphous surface and a monocrystal formed on said substrate and provided with an active region in said monocrystal, said monocrystal being formed by providing a primary seed in the form of a film with an area of 100 µm² or less arranged in a desired pattern on the surface of said substrate acting as a non-nucleation surface, then subjecting said primary seed to thermal treatment to convert it to a monocrystalline seed, and subsequently subjecting said monocrystalline seed to crystal growth treatment to allow a monocrystal to grow beyond said monocrystallie seed and cover said non-nucleation surface.
Claim 42
Dependent Claim
145 words
A Semiconductor device comprising a substrate having an insulating amorphous surface and a monocrystal formed on said substrate and provided with an active region in said monocrystal, said monocrystal being formed by providing a primary seed in the form of a minute polycrystalline or amorphous film with an area of 16µm² or less arranged in a desired pattern on the surface of said substrate acting as a non-nucleation surface with a small nucleation density as compared with the surface of the monocrystalline seed mentioned below, then subjecting said primary seed to thermal treatment to convert it to a monocrystalline seed with a face defect density of 10⁵/cm² or less as determined by the transmission electron microscope observation, and subsequently subjecting said monocrystalline seed to crystal growth treatment to allow a monocrystal to grow from then beyond said monocrystalline seed and eventually cover said non-nucleation surface.
Claim 43
Dependent Claim
145 words
A Semiconductor device comprising a substrate having an insulating amorphous surface and a monocrystal formed on said substrate and provided with an active region in said monocrystal, said monocrystal being formed by providing a primary seed in the form of a minute polycrystalline or amorphous film with an area of 16µm² or less arranged in a desired pattern on the surface of said substrate acting as a non-nucleation surface with a small nucleation density as compared with the surface of the monocrystalline seed mentioned below, then subjecting said primary seed to thermal treatment to convert it to a monocrystalline seed with a face defect density of 10⁵/cm² or less as determined by the transmission electron microscope observation, and subsequently subjecting said monocrystalline seed to crystal growth treatment to allow a monocrystal to grow from then beyond said monocrystalline seed and eventually cover said non-nucleation surface.
Claim 44
Dependent Claim
47 words
A process for producing an article having a crystalline film on a substrate, said process comprising producing on the substrate one or more monocrystalline seeds having controlled crystal face orientation and subjecting the seed or seeds to selective epitaxial growth to at least partly cover the substrate.
Claim 45
Dependent Claim
47 words
A process for producing an article having a crystalline film on a substrate, said process comprising producing on the substrate one or more monocrystalline seeds having controlled crystal face orientation and subjecting the seed or seeds to selective epitaxial growth to at least partly cover the substrate.
Claim 46
Dependent Claim
16 words
A process according to claim 37, wherein the substrate has a surface of low nucleation density.
Claim 47
Dependent Claim
38 words
A process according to claim 37 or 38 wherein the seed crystal is formed from an amorphous thin film by a treatment that results in and/or preserves a face orientation in a direction generally perpendicular to the substrate.
References Cited (Backward Citations)
JPS5869798A
Cited
US4657603A
Cited
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