US4812328A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming deposited film
Assignee: Canon Inc
•
Filing: 1986-12-23
•
Granted: 1989-03-14
•
Expires: 2006-12-23
Abstract
Abstract A method for forming a deposited film by introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting material separately from each other into a reaction space to form a deposited film according to a chemical reaction, which comprises activating previously a gaseous substance (B) for formation of a band gap controller in an activation space to form an activated species and introducing said activated species into the reaction space to form a deposited film controlled in band gap on a substrate existing in the film forming space.
Inventors
- 👤 Keishi Saitoh
- 👤 Masaaki Hirooka
- 👤 Junichi Hanna
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:45
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2923; C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/452; H10P14/24; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
175 words
A method for forming a deposited film by introducing into a reaction space having a substrate a non-activated gaseous starting material for formation of the deposited film and a non-activated gaseous halogenic oxidizing agent selected from group consisting of F 2 , C1 2 , Br 2 and I 2 and having the property of oxidation action on said non-activated gaseous starting material to form a deposited film on said substrate by a direct chemical reaction between said non activated gaseous starting material and said non-activated gaseous halogenic oxidizing agent, which comprises: activating a gaseous substance (B) which includes a component to act as a band gap controller in an activation space separate from said reaction space to form an activated species; and introducing said activated species into the reaction space so as to form a mixture with said non activated gaseous starting material and said non activated gaseous halogenic oxidizing agent and form a deposited film controlled in band gap on said substrate without the use of external discharge energy in the reaction space.
Claim 2
Independent Claim
175 words
A method for forming a deposited film by introducing into a reaction space having a substrate a non-activated gaseous starting material for formation of the deposited film and a non-activated gaseous halogenic oxidizing agent selected from group consisting of F 2 , C1 2 , Br 2 and I 2 and having the property of oxidation action on said non-activated gaseous starting material to form a deposited film on said substrate by a direct chemical reaction between said non activated gaseous starting material and said non-activated gaseous halogenic oxidizing agent, which comprises: activating a gaseous substance (B) which includes a component to act as a band gap controller in an activation space separate from said reaction space to form an activated species; and introducing said activated species into the reaction space so as to form a mixture with said non activated gaseous starting material and said non activated gaseous halogenic oxidizing agent and form a deposited film controlled in band gap on said substrate without the use of external discharge energy in the reaction space.
Claim 3
Dependent Claim
17 words
A method for forming a deposited film according to claim 1, wherein luminescence is accompanied during formation.
Claim 4
Dependent Claim
21 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material is a chain silane compound.
Claim 5
Dependent Claim
22 words
A method for forming a deposited film according to claim 3, wherein said chain silane compound is a straight chain silane compound.
Claim 6
Dependent Claim
34 words
A method for forming a deposited film according to claim 4, wherein said straight chain silane compound is represented by the formula Si n H 2n+2 (n is an integer of 1 to 8).
Claim 7
Dependent Claim
22 words
A method for forming a deposited film according to claim 3, wherein said chain silane compound is a branched chain silane compound.
Claim 8
Dependent Claim
26 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material is a silane compound having a cyclic structure of silicon.
Claim 9
Dependent Claim
40 words
A method for forming a deposited film according to claim 1, wherein said substrateis arranged at a position opposed to the direction in which said gaseous starting material and said gaseous halogenic oxidizing agent are introduced into said reaction space.
Claim 10
Dependent Claim
36 words
A method for forming a deposited film according to claim 1, wherein said gaseous starting material and said gaseous halogenic oxidizing agent are introduced into said reaction space through a transporting pipe of a multi-tubular structure.
Claim 11
Dependent Claim
23 words
A method for forming a deposited film according to claim 1, wherein said gaseous substance (B) contains an element for expanding band gap.
Claim 12
Dependent Claim
23 words
A method for, forming a deposited film according to claim 10, wherein said band gap expanding element is carbon, nitrogen or oxygen atom.
Claim 13
Dependent Claim
22 words
A method for forming a deposited film according to claim 1, wherein said gaseous substance (B) contains a band gap reducing element.
Claim 14
Dependent Claim
22 words
A method for forming a deposited film according to claim 12, wherein said band gap reducing element is germanium or tin atom.
Claim 15
Dependent Claim
40 words
A method for forming a deposited film according to claim 1, wherein said band gap controller is introduced into the activation chamber as diluted with at least one gas of H 2 , He, Ne, Ar, Kr, Xe, and Rn.
Claim 16
Dependent Claim
27 words
A method for forming a deposited film according to claim 1, wherein discharging, light or heat energy is utilized as the activation method in said activation space.
Claim 17
Dependent Claim
29 words
A method for forming a deposited film according to claim 1, wherein a gaseous substance (D) for formation of a valence electron controller is introduced into the reaction space.
Claim 18
Dependent Claim
28 words
A method for forming a deposited film according to claim 16, wherein said gaseous substance (D) for formation of a valence electron controller is introduced after previous activation.
Claim 19
Dependent Claim
24 words
A method for forming a deposited film according to claim 16, wherein the valence electron controller is a semiconductive impurity of n-type or p-type.
Claim 20
Dependent Claim
27 words
A method for forming a deposited film according to claim 14, wherein the valence electron controller is an element in the group IIIA of the periodic table.
Claim 21
Dependent Claim
27 words
A method for forming a deposited film according to claim 16, wherein the valence electron controller is an element in the group VA of the periodic table.
References Cited (Backward Citations)
US31708A
Cited
US3473978A
Cited
US3888705A
Cited
US4146657A
Cited
USRE31708E
Cited
GB2038086A
Cited
US4239811A
Cited
US4448801A
Cited
US4522663A
Cited
US4357179A
Cited
US4421592A
Cited
US4402762A
Cited
EP0074212A1
Cited
US4652463A
Cited
EP0090586A1
Cited
US4462847A
Cited
US4615905A
Cited
US4504518A
Cited
US4532199A
Cited
JPS59199035A
Cited
US4554180A
Cited
GB2148328A
Cited
US4637938A
Cited
US4645689A
Cited
US4624906A
Cited
US4624736A
Cited
US4657777A
Cited
US4689093A
Cited
JPH0643819A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-13 | 1992-09-12 | 1993-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-13 | 1996-09-12 | 1997-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-13 | 2000-09-12 | 2001-03-14 | $7700.00 | Window Closed / Lapsed |