US4645689A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Deposition technique
Assignee: Nokia Bell Labs
•
Filing: 1985-09-03
•
Granted: 1987-02-24
•
Expires: 2005-09-03
Abstract
Abstract Devices such as photodiodes based on III-V semiconductor materials have been made utilizing a CVD epitaxial procedure. This procedure includes, for example, the use of a combination of liquid and solid chloride transport sources.
Inventors
- 👤 Herbert M. Cox
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 15:04
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C30B29/00; C30B29/10; C30B29/40
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
146 words
A process for forming a device comprising the steps of forming at least one precurser gas flow, subjecting a substrate to said flow to deposit a material, and completing said device. characterized in that at least one of said precurser gas flows is formed from at least one liquid source gas flow and at least one solid source gas flow, wherein said solid source gas flow is formed by subjecting a heated solid comprising a III-V semiconductor material that includes a constituent chosen from the group consisting of P and As to a chlorine entity containing gas flow, wherein said liquid source gas flow is formed by subjecting a liquid to a separate chlorine entity containing gas flow and wherein said liquid source gas flow is combined with said solid source gas flow after said heated solid is subjected to said chlorine entity containing gas flow.
Claim 2
Dependent Claim
146 words
A process for forming a device comprising the steps of forming at least one precurser gas flow, subjecting a substrate to said flow to deposit a material, and completing said device. characterized in that at least one of said precurser gas flows is formed from at least one liquid source gas flow and at least one solid source gas flow, wherein said solid source gas flow is formed by subjecting a heated solid comprising a III-V semiconductor material that includes a constituent chosen from the group consisting of P and As to a chlorine entity containing gas flow, wherein said liquid source gas flow is formed by subjecting a liquid to a separate chlorine entity containing gas flow and wherein said liquid source gas flow is combined with said solid source gas flow after said heated solid is subjected to said chlorine entity containing gas flow.
Claim 3
Dependent Claim
24 words
The process of claim 1 wherein a multiplicity of gas flows is formed and exists simultaneously at least at some time during said deposition.
Claim 4
Dependent Claim
11 words
The process of claim 2 wherein said liquid comprises molten indium.
Claim 5
Dependent Claim
11 words
The process of claim 2 wherein said liquid comprises molten gallium.
Claim 6
Dependent Claim
22 words
The process of claim 2 wherein said III-V semiconductor material is chosen from the group consisting of indium phosphide and gallium arsenide.
Claim 7
Dependent Claim
28 words
The process of claim 5 wherein said chlorine entity is formed from a composition comprising a member chosen from the group consisting of arsenic trichloride and phosphorous trichloride.
Claim 8
Dependent Claim
28 words
The process of claim 2 wherein said chlorine entity is formed from a composition comprising a member chosen from the group consisting of arsenic trichloride and phosphorous trichloride.
Claim 9
Dependent Claim
17 words
The process of claim 1 wherein one precursor gas flow exists at any time during said deposition.
Claim 10
Dependent Claim
11 words
The process of claim 8 wherein said liquid comprises molten indium.
Claim 11
Dependent Claim
11 words
The process of claim 8 wherein said liquid comprises molten gallium.
Claim 12
Dependent Claim
22 words
The process of claim 8 wherein said III-V semiconductor material is chosen from the group consisting of indium phosphide and gallium arsenide.
Claim 13
Dependent Claim
28 words
The process of claim 11 wherein said chlorine entity is formed from a composition comprising a member chosen from the group consisting of arsenic trichloride and phosphorus trichloride.
Claim 14
Dependent Claim
28 words
The process of claim 8 wherein said chlorine entity is formed from a composition comprising a member chosen from the group consisting of arsenic trichloride and phosphorus trichloride.
Claim 15
Dependent Claim
31 words
The process of claim 8 wherein said precursor gas flow is modified during said deposition by the step comprising modifying the gas flow contributed from said at least one solid source.
Claim 16
Dependent Claim
27 words
The process of claim 14 wherein said solid source gas flow comprising a first solid source gas flow is changed for a second solid source gas flow.
Claim 17
Dependent Claim
11 words
The process of claim 15 wherein said liquid comprises molten indium.
Claim 18
Dependent Claim
11 words
The process of claim 15 wherein said liquid comprises molten gallium.
Claim 19
Dependent Claim
31 words
The process of claim 15 wherein said solid of said first solid source gas flow comprises a III-V semiconductor material chosen from the group consisting of gallium arsenide and indium phosphide.
Claim 20
Dependent Claim
28 words
The process of claim 18 wherein said chlorine entity is formed from a composition comprising a member chosen from the group consisting of arsenic trichloride and phosphorous trichloride.
Claim 21
Dependent Claim
31 words
The process of claim 18 wherein said solid of said second solid source gas flow comprises a III-V semiconductor material chosen from the group consisting of indium phosphide and gallium arsenide.
Claim 22
Dependent Claim
29 words
The process of claim 15 wherein said second source solid source gas flow comprises a III-V semiconductor material chosen from the group consisting of indium phosphide and gallium arsenide.
Claim 23
Dependent Claim
20 words
The process of claim 14 wherein an additional solid source gas flow is added to said solid source gas flow.
Claim 24
Dependent Claim
29 words
The process of claim 14 wherein said solid source gas flow comprising a plurality of solid source gas flows is modified by terminating one of said plurality of flows.
Claim 25
Dependent Claim
12 words
The process of claim 1 wherein said material deposition comprises indium phosphide.
Claim 26
Dependent Claim
12 words
The process of claim 1 wherein said material deposition comprises gallium arsenide.
Claim 27
Dependent Claim
13 words
The process of claim 1 wherein said material deposition comprises indium gallium arsenide.
Claim 28
Dependent Claim
14 words
The process of claim 1 wherein said material deposition comprises indium gallium arsenide phosphide.
Claim 29
Dependent Claim
15 words
The process of claim 1 wherein said material deposition comprises two regions of differing composition.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-23 | 1990-08-25 | 1991-02-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-23 | 1994-08-25 | 1995-02-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-23 | 1998-08-25 | 1999-02-24 | $7700.00 | Window Closed / Lapsed |