US4624736A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Laser/plasma chemical processing of substrates
Assignee: United States Department of Energy
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Filing: 1984-07-24
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Granted: 1986-11-25
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Expires: 2004-07-24
Abstract
Abstract A process for the modification of substrate surfaces is described, wherein etching or deposition at a surface occurs only in the presence of both reactive species and a directed beam of coherent light.
Inventors
- 👤 James M. Gee
- 👤 Philip J. Hargis, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:06
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
94 words
A process for modifying a surface of a substrate, comprising the steps of: (a) generating radical species of a defined source; (b) allowing the radical species to diffuse to a substrate surface which is remote from said defined source, the concentration of species at said surface being insuffient to cause spontaneous surface modification; and (c) in the presence of the radical species, contacting at least a portion of said substrate surface with a beam of light having a predetermined intensity, whereby said surface undergoes modification only in in said portion contacted by said light.
Claim 2
Dependent Claim
94 words
A process for modifying a surface of a substrate, comprising the steps of: (a) generating radical species of a defined source; (b) allowing the radical species to diffuse to a substrate surface which is remote from said defined source, the concentration of species at said surface being insuffient to cause spontaneous surface modification; and (c) in the presence of the radical species, contacting at least a portion of said substrate surface with a beam of light having a predetermined intensity, whereby said surface undergoes modification only in in said portion contacted by said light.
Claim 3
Dependent Claim
17 words
A process according to claim 1, wherein said defined source comprises a direct current glow discharge plasma.
Claim 4
Dependent Claim
16 words
A process according to claim 1, wherein said defined source comprises a radio frequency discharge plasma.
Claim 5
Dependent Claim
36 words
A process according to claim 1, wherein said defined source comprises means for directing radiation against material of predetermined composition, whereby said reactive species are produced, said radiation comprising a laser beam or an electron beam.
Claim 6
Dependent Claim
20 words
A process according to claim 2, wherein said plasma is comprised of species derived from silane at said defined source.
Claim 7
Dependent Claim
17 words
A process according to claim 5, wherein said silane is at a pressure of approximately 30 mTorr.
Claim 8
Dependent Claim
13 words
A process according to claim 1, wherein said beam of light is coherent.
Claim 9
Dependent Claim
20 words
A process according to claim 7, wherein said wavelength falls in the range between about 248 nm and 351 nm.
Claim 10
Dependent Claim
19 words
A process according to claim 8, wherein said beam of coherent light is produced by a UV-emitting excimer laser.
Claim 11
Dependent Claim
12 words
A process according to claim 1, wherein said substrate comprises an oxide.
Claim 12
Dependent Claim
23 words
A process according to claim 10, wherein said substrate comprises one selected from the group consisting of pyrex glass, sapphire, and silicon dioxide.
Claim 13
Dependent Claim
14 words
A process according to claim 1, wherein said modification comprises etching of said surface.
Claim 14
Dependent Claim
17 words
A process according to claim 1, wherein said modification comprises deposition of a layer on said surface.
Claim 15
Dependent Claim
11 words
A process according to claim 13, wherein said layer comprises silicon.
Claim 16
Dependent Claim
11 words
A process according to claim 14, wherein said silicon is epitaxial.
Claim 17
Dependent Claim
23 words
A process according to claim 1, wherein said modification comprises: (a) etching discontinuities in said substrate and (b) depositing material in said discontinuities.
Claim 18
Dependent Claim
31 words
A process according to claim 1, wherein said substrate is subjected to a preetch to produce discontinuities in said substrate and wherein said modification comprises depositing epitaxial silicon in said discontinuities.
Claim 19
Independent Claim
75 words
An apparatus for modifying a surface of a substrate, comprising: (a) generating means for generating reactive species; (b) irradiating means for producing and directing a beam of light; (c) holding means for holding a substrate: exposed to said reactive species but spaced therefrom a sufficient distance to preclude spontaneous modification, and accessible to said beam of light; and (d) conduit means for allowing diffusion of said reactive species from said generating means to said substrate.
Claim 20
Independent Claim
75 words
An apparatus for modifying a surface of a substrate, comprising: (a) generating means for generating reactive species; (b) irradiating means for producing and directing a beam of light; (c) holding means for holding a substrate: exposed to said reactive species but spaced therefrom a sufficient distance to preclude spontaneous modification, and accessible to said beam of light; and (d) conduit means for allowing diffusion of said reactive species from said generating means to said substrate.
Claim 21
Dependent Claim
67 words
An apparatus according to claim 18, wherein said generating means comprises: (i) a reaction space containing at least one gas, (ii) means for introducing and removing gas from said reaction space, and (iii) a cathode and at least one anode arranged such that a voltage potential can be imposed across at least a portion of said reaction space of sufficient magnitude such that said gas is ionized.
Claim 22
Dependent Claim
19 words
An apparatus according to claim 19, wherein said voltage potential alternates at a frequency in the radio wave range.
Claim 23
Dependent Claim
61 words
An apparatus according to claim 18, wherein said generating means comprises: (i) a reaction space containing at least one gas, (ii) means for introducing and removing gas from said reaction space, and (iii) means for inducing a magnetic field in at least a portion of said reaction space of sufficient magnitude such that said gas is heated to form a plasma.
Claim 24
Dependent Claim
34 words
An apparatus according to claim 18, wherein said generating means comprises: (i) means for producing a beam comprised of electrons or coherent light, and (ii) means for directing said beam at a predetermined target.
Claim 25
Dependent Claim
34 words
An apparatus according to claim 19, wherein said conduit means comprises a first tube, one end of which communicates with said reaction space, said substrate being disposed at the other end of said tube.
Claim 26
Dependent Claim
44 words
An apparatus according to claim 23, wherein said irradiating means comprises a second tube, one end of which communicates with said reaction space, said first and second tubes being arranged opposite each other along a common longitudinal axis which passes through said reaction space.
Claim 27
Dependent Claim
38 words
An apparatus according to claim 24, wherein said irradiating means further comprises a window disposed at the end of said second tube opposite said end which communicates with said reaction space, said window transmitting at least ultraviolet light.
Claim 28
Dependent Claim
21 words
An apparatus according to claim 25, wherein said window is comprised of one from the group consisting of quartz and sapphire.
Claim 29
Dependent Claim
15 words
An apparatus according to claim 18, wherein said irradiating means comprises a ultraviolet-emitting excimer laser.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-11-24 | 1990-05-26 | 1990-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-11-24 | 1994-05-26 | 1994-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-11-24 | 1998-05-26 | 1998-11-25 | $7700.00 | Window Closed / Lapsed |