US4657777A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Formation of deposited film
Assignee: Canon Inc
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Filing: 1986-01-22
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Granted: 1987-04-14
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Expires: 2006-01-22
Abstract
Abstract A method for forming a deposited film is provided which comprises forming a gas atmosphere containing an active species (a) obtained by decomposition of a silicon halide represented by the formula SinX2n+2 (n is an integer of 1 or more and X represents a halogen atom) and at least one compound selected from the group of the compounds (A) consisting of acyclic silanes, silanes having cyclic structures, silanes containing an alkyl group and halo-substituted derivatives thereof in a film forming space (A) where a silicon-containing film is to be formed on a desired substrate, and then carrying out at least one of (1) exciting discharging in said gas atmosphere and (2) giving heat energy to said gas atmosphere, thereby forming a silicon-containing deposited film.
Inventors
- 👤 Masaaki Hirooka
- 👤 Shunichi Ishihara
- 👤 Junichi Hanna
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 06:48
CPC Classifications
B; B05; B05D; B05D1/00; B05D1/60; C; C23; C23C; C23C16/00; C23C16/22; C23C16/44; C23C16/50; C23C16/505; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411; B05D2518/00; B05D2518/10
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
125 words
A method for forming a deposited film, which comprises forming a gas atmosphere containing an active species (a) obtained by decomposition of a silicon halide represented by the formula Si n X 2n+2 (n is an integer of 1 or more and X represents a halogen atom) and at least one compound selected from the group of the compounds (A) consisting of acyclic silanes, silanes having cyclic structures, silanes containing an alkyl group and halo-substituted derivatives thereof in a film forming space (A) where a silicon-containing film is to be formed on a desired substrate, and then carrying out at least one of (1) exciting discharging in said gas atmosphere and (2) giving heat energy to said gas atmosphere, thereby forming a silicon-containing deposited film.
Claim 2
Independent Claim
125 words
A method for forming a deposited film, which comprises forming a gas atmosphere containing an active species (a) obtained by decomposition of a silicon halide represented by the formula Si n X 2n+2 (n is an integer of 1 or more and X represents a halogen atom) and at least one compound selected from the group of the compounds (A) consisting of acyclic silanes, silanes having cyclic structures, silanes containing an alkyl group and halo-substituted derivatives thereof in a film forming space (A) where a silicon-containing film is to be formed on a desired substrate, and then carrying out at least one of (1) exciting discharging in said gas atmosphere and (2) giving heat energy to said gas atmosphere, thereby forming a silicon-containing deposited film.
Claim 3
Dependent Claim
14 words
A method according to claim 1, wherein the compound (A) is an acyclic silane.
Claim 4
Dependent Claim
42 words
A method according to claim 2, wherein the acyclic silane is selected from the group consisting of SiH 4 , Si 2 H 6 , Si 3 H 8 , Si 4 H 10 and SiH 3 SiH(SiH 3 )SiH 3 .
Claim 5
Dependent Claim
14 words
A method according to claim 1, wherein the compound (A) has a cyclic structure.
Claim 6
Dependent Claim
50 words
A method according to claim 4, wherein the silane having a cyclic structure is selected from the group consisting of Si 3 H 6 , Si 5 H 10 , Si 6 H 12 , Si 5 H 9 (SiH 3 ) and Si 6 H 11 (SiH 3 ).
Claim 7
Dependent Claim
17 words
A method according to claim 1, wherein the compound (A) is a silane having an alkyl group.
Claim 8
Dependent Claim
85 words
A method according to claim 6, wherein the silane having an alkyl group is selected from the group consisting of SiH 2 (CH 3 ) 2 , SiH 3 Si(CH 3 ) 3 , SiH 3 SiH 2 Si(CH 3 ) 3 , SiH 3 SiH 2 SiH 2 Si(CH 3 ) 3 , Si 5 H 9 (CH 3 ), SiH 2 (OCH 3 )SiH 2 Si(CH 3 ) 3 , and SiH 2 (C 6 H 5 )Si (CH 3 ) 3 .
Claim 9
Dependent Claim
18 words
A method according to claim 1, wherein the compound A is a halo-substituted derivative of an acyclic silane.
Claim 10
Dependent Claim
43 words
A method according to claim 8, wherein the halo-substituted derivative of an acyclic silane is selected from the group consisting of SiH 2 Cl 2 , SiH 3 Cl, Si 2 H 4 Cl 2 and Si 3 H 6 Cl 2 .
Claim 11
Dependent Claim
21 words
A method according to claim 1, wherein the compound A is a halo-substituted derivative of a silane having a cyclic structure.
Claim 12
Dependent Claim
77 words
A method according to claim 10, wherein the halo-substituted derivative of a silane having a cyclic structure is selected from the group consisting of Si 5 H 5 Cl 5 , Si 5 H 5 Br 5 , Si 5 H 5 Cl 3 Br 2 , Si 5 H 6 Cl 4 , Si 6 H 8 Cl 4 , Si 5 H 6 Br 4 and Si 5 H 6 Cl 2 Br 2 .
Claim 13
Dependent Claim
21 words
A method according to claim 1, wherein the compound (A) is a halo-substituted derivative of a silane containing an alkyl group.
Claim 14
Dependent Claim
54 words
A method according to claim 12, wherein the halo-substituted derivative of a silane containing an alkyl group is selected from the group consisting of SiH 2 ClSiH 2 Si(CH 3 ) 3 , SiH 2 BrSi(CH 3 ) 3 , and SiH 2 OCH 3 SiH 2 Si(CH 3 ) 2 SiClH 2 .
Claim 15
Dependent Claim
54 words
A method according to claim 1, wherein Si n X 2n+2 is selected from SiF 4 , Si 2 F 6 , Si 3 F 8 , Si 4 F 10 , Si 2 Cl 6 , SiF 2 Cl 2 , Si 2 F 4 Cl 2 and SiBr 2 F 2 .
Claim 16
Dependent Claim
15 words
A method according to claim 1, wherein the active species (a) in SIF 2 *.
Claim 17
Dependent Claim
21 words
A method according to claim 1, wherein a nitrogen compound is introduced in a gaseous state into the film forming space.
Claim 18
Dependent Claim
36 words
A method according to claim 16, wherein the nitrogen compound is selected from the group consisting of N 2 , NH 3 , H 2 NNH 2 , HN 3 and NH 4 N 3 .
Claim 19
Dependent Claim
56 words
A method according to claim 1, wherein there is further introduced into the film forming space at least one of hydrocarbons in a gaseous state selected from the group consisting of saturated hydrocarbons having 1 to 5 carbon atoms, ethylenic hydrocarbons having 2 to 5 carbon atoms and acetylenic hydrocarbons having 2 to 4 carbon atoms.
Claim 20
Dependent Claim
30 words
A method according to claim 18, wherein the hydrocarbon is selected from the group consisting of ethane, propane, n-butane, pentane, ethylene, propylene, butene-1, butene-2, isobutylene, pentene, acetylene, methylacetylene and butyne.
Claim 21
Dependent Claim
38 words
A method according to claim 1, wherein there is further introduced at least one compound selected from the group consisting of O 2 , O 3 , CO, CO 2 , NO, NO 2 and N 2 O.
Claim 22
Dependent Claim
41 words
A method according to claim 1, wherein there is further introduced into the film forming space a starting material in a gaseous state for introduction of an impurity capable of controlling the electroconductivity characteristics of the deposited film to be formed.
Claim 23
Dependent Claim
102 words
A method according to claim 21, wherein the starting material for introduction of an impurity is selected from the group consisting of PH 3 , P 2 H 4 , PF 3 , PF 5 , PCl 3 , AsH 3 , AsF 3 , AsF 5 , AsCl 3 , SbH 3 , SbF 5 , SiH 3 , BF 3 , BCl 3 , BBr 3 , B 2 H 6 , B 4 H 10 , B 5 H 9 , B 5 H 11 , B 6 H 10 , B 6 H 12 and AlCl 3 .
Claim 24
Dependent Claim
46 words
A method according to claim 1, wherein the ratio of the amount of the active species (a) to the amount of the compound (A) introduced into the film forming space is in the range from 100:1 to 1:10, in terms of the feeding flow rate ratio.
References Cited (Backward Citations)
US4217374A
Cited
US4226898A
Cited
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