US4226898A — Amorphous semiconductors equivalent to crystallin…

Claim 1

Independent Claim 147 words

The method of making a semiconductor film comprising a solid amorphous semiconductor host matrix including at least one element and having electronic configurations which have an energy gap and a density of localized states therein, said method comprising depositing on a substrate a solid amorphous semiconductor host matrix including at least one element by glow discharge decomposition of a compound containing said at least one element and at least one alterant element in a partial vacuum having an atmosphere separately containing at least one different alterant element and not derived from the compound, wherein said different at least one alterant elements of said compound and separately contained in said atmosphere comprise at least fluorine and are incorporated in said amorphous semiconductor host matrix during deposition thereof yelding an altered amorphous semiconductor material having altered electronic configurations with a reduced density of localized states in the energy gap.

Claim 2

Independent Claim 147 words

The method of making a semiconductor film comprising a solid amorphous semiconductor host matrix including at least one element and having electronic configurations which have an energy gap and a density of localized states therein, said method comprising depositing on a substrate a solid amorphous semiconductor host matrix including at least one element by glow discharge decomposition of a compound containing said at least one element and at least one alterant element in a partial vacuum having an atmosphere separately containing at least one different alterant element and not derived from the compound, wherein said different at least one alterant elements of said compound and separately contained in said atmosphere comprise at least fluorine and are incorporated in said amorphous semiconductor host matrix during deposition thereof yelding an altered amorphous semiconductor material having altered electronic configurations with a reduced density of localized states in the energy gap.

Claim 3

Dependent Claim 18 words

The method as defined in claim 1 wherein said alterant elements are made reactive by the glow discharge.

Claim 4

Dependent Claim 19 words

The method as defined in claim 1 comprising controlling the relative amounts of said compound and said alterant elements.

Claim 5

Dependent Claim 20 words

The method as defined in claim 1 comprising controlling the temperature of deposition of the solid amorphous semiconductor host matrix.

Claim 6

Dependent Claim 17 words

The method as defined in claim 1 wherein said alterant elements comprise at least hydrogen and fluorine.

Claim 7

Dependent Claim 24 words

The method as defined in claim 1 wherein said alterant elements comprise at least rare earth elements, transition metal elements, chlorine, boron or carbon.

Claim 8

Dependent Claim 21 words

The method as defined in claim 1 wherein said at least one element of the amorphous semiconductor host matrix comprises silicon.

Claim 9

Dependent Claim 21 words

The method as defined in claim 1 wherein said at least one element of the amorphous semiconductor host matrix comprises germanium.

Claim 10

Dependent Claim 24 words

The method as defined in claim 1 wherein said at least one element of the amorphous semiconductor host matrix comprises a Group III element.

Claim 11

Dependent Claim 24 words

The method as defined in claim 1 wherein said at least one element of the amorphous semiconductor host matrix comprises a Group V element.

Claim 12

Dependent Claim 24 words

The method as defined in claim 1 wherein said at least one element of the amorphous semiconductor host matrix comprises a Group VI element.

Claim 13

Dependent Claim 25 words

The method as defined in claim 1 wherein the compound comprises silicon tetrafluoride and wherein the alterant element separately contained in the atmosphere comprises hydrogen.

Claim 14

Dependent Claim 52 words

The method as defined in claim 1 wherein the atmosphere for the glow discharge decomposition separately contains a modifier element which is incorporated in said amorphous semiconductor host matrix during formtion thereof yielding a modified amorphous semiconductor material having modified electronic configurations with the introduction of localized states in the energy gap.

Claim 15

Dependent Claim 33 words

The method as defined in claim 13 wherein the modified amorphous semiconductor material is such that the Fermi level is moved to the vicinity of either the valence band or the conduction band.

Claim 16

Dependent Claim 26 words

The method as defined in claim 14 wherein the modifier element is obtained from arsine during the glow discharge deposition of the amorphous semiconductor host matrix.

Claim 17

Dependent Claim 28 words

The method as defined in claim 14 wherein the modifier element is obtained from phosphine, ammonia, Ga(CH 3 ) 3 or (C 2 H 5 ) 3 Al.

Claim 18

Dependent Claim 18 words

The method as defined in claim 13 wherein said modifier element is made reactive by the glow discharge.

Claim 19

Dependent Claim 22 words

The method as defined in claim 13 wherein said alterant elements and said modifier element are made reactive by the glow discharge.

Claim 20

Dependent Claim 19 words

The method as defined in claim 13 comprising controlling the relative amounts of said compound and said modifier element.

Claim 21

Dependent Claim 24 words

The method as defined in claim 13 wherein said modifier element comprises Group V elements or Group III elements for p or n-type conduction.

Claim 22

Dependent Claim 21 words

The method as defined in claim 13 wherein said modifier element comprises zinc, copper, gold, silver or manganese for enhancing photoconductivity.

Claim 23

Dependent Claim 19 words

The method as defined in claim 13 wherein said modifier element comprises transition metal elements for increasing electrical conductivity.

Claim 24

Independent Claim 124 words

The method of making a semiconductor film comprising a solid amorphous semiconductor host matrix including at least one element and having electronic configurations which have an energy gap and a density of localized states therein, said method comprising depositing on a substrate a solid amorphous semiconductor host matrix including at least one element by glow discharge decomposition of a plurality of compounds, each containing said at least one element and at least one different alterant element, wherein said different at least one alterant elements of said compounds comprise at least fluorine and are incorporated in said amorphous semiconductor host matrix during deposition thereof yeilding an altered amorphous semiconductor material having altered electronic configurations with a reduced density of localized states in the energy gap.

Claim 25

Independent Claim 124 words

The method of making a semiconductor film comprising a solid amorphous semiconductor host matrix including at least one element and having electronic configurations which have an energy gap and a density of localized states therein, said method comprising depositing on a substrate a solid amorphous semiconductor host matrix including at least one element by glow discharge decomposition of a plurality of compounds, each containing said at least one element and at least one different alterant element, wherein said different at least one alterant elements of said compounds comprise at least fluorine and are incorporated in said amorphous semiconductor host matrix during deposition thereof yeilding an altered amorphous semiconductor material having altered electronic configurations with a reduced density of localized states in the energy gap.

Claim 26

Dependent Claim 18 words

The method as defined in claim 23 wherein said alterant elements are made reactive by the glow discharge.

Claim 27

Dependent Claim 15 words

The method as defined in claim 23 wherein said alterant elements comprise at least hydrogen.

Claim 28

Dependent Claim 17 words

The method as defined in claim 23 wherein the plurality of compounds comprise silicon tetrafluoride and silane.

Claim 29

Dependent Claim 72 words

The method as defined in claim 23 wherein the atmosphere for the glow discharge decomposition separately contains a modifier element which is incorporated in said amorphous semiconductor host matrix during the formation thereof yielding a modified amorphous semiconductor material having modified electronic configurations with the introduction of localized states in the energy gap, such that the Fermi level is moved to the vicinity of either the valence band or the conduction band.

Claim 30

Dependent Claim 18 words

The method as defined in claim 27 wherein said modifier element is made reactive by the glow discharge.

Claim 31

Independent Claim 150 words

The method of making a semiconductor film comprising a solid amorphous semiconductor host matrix including at least one element and having electronic configurations which have an energy gap and a density of localized states therein, said method comprising depositing on a substrate a solid amorphous semiconductor host matrix including at least one element by glow discharge decomposition of a plurality of compounds, each containing said at least one element and at least one alterant element, in a partial vacuum having an atmosphere separately containing at least one different alterant element and not derived from the compounds, wherein said different at least one alterant elements of said compounds and separately contained in said atmosphere comprise at least fluorine and are incorporated in said amorphous semiconductor host matrix during deposition thereof yielding an altered amorphous semiconductor material having altered electronic configurations with a reduced density of localized states in the energy gap.

Claim 32

Independent Claim 150 words

The method of making a semiconductor film comprising a solid amorphous semiconductor host matrix including at least one element and having electronic configurations which have an energy gap and a density of localized states therein, said method comprising depositing on a substrate a solid amorphous semiconductor host matrix including at least one element by glow discharge decomposition of a plurality of compounds, each containing said at least one element and at least one alterant element, in a partial vacuum having an atmosphere separately containing at least one different alterant element and not derived from the compounds, wherein said different at least one alterant elements of said compounds and separately contained in said atmosphere comprise at least fluorine and are incorporated in said amorphous semiconductor host matrix during deposition thereof yielding an altered amorphous semiconductor material having altered electronic configurations with a reduced density of localized states in the energy gap.

Claim 33

Dependent Claim 18 words

The method as defined in claim 29 wherein said alterant elements are made reactive by the glow discharge.

Claim 34

Dependent Claim 17 words

The method as defined in claim 29 wherein said alterant elements comprise at least hydrogen and fluorine.

Claim 35

Dependent Claim 32 words

The method as defined in claim 29 wherein the plurality of compounds comprise silicon tetrafluoride and silane and the alterant elements separately contained in the atmosphere comprise at least hydrogen or fluorine.

Claim 36

Dependent Claim 72 words

The method as defined in claim 29 wherein the atmosphere for the glow discharge decomposition separately contains a modifier element which is incorporated in said amorphous semiconductor host matrix during the formation thereof yielding a modified amorphous semiconductor material having modified electronic configurations with the introduction of localized states in the energy gap such that the Fermi level is moved to the vicinity of either the valence band or the conduction band.

Claim 37

Dependent Claim 18 words

The method as defined in claim 33 wherein said modifier element is made reactive by the glow discharge.

Claim 38

Independent Claim 155 words

The method of making a semiconductor film comprising a solid amorphous alloy semiconductor host matrix including a plurality of elements and having electronic configurations which have an energy gap and a density of localized states therein, said method comprising depositing on a substrate a solid amorphous alloy semiconductor host matrix including a plurality of elements by glow discharge decomposition of a plurality of compounds, each containing at least one of said elements and at least one alterant element, in a partial vacuum having an atmosphere separately containing at least one different alterant element and not derived from the compounds, wherein said different at least one alterant elements of said compounds and separately contained in said atmosphere comprise at least fluorine and are incorporated in said amorphous alloy semiconductor host matrix during deposition thereof yielding an altered amorphous alloy semiconductor material having altered electronic configurations with a reduced density of localized states in the energy gap.

Claim 39

Independent Claim 155 words

The method of making a semiconductor film comprising a solid amorphous alloy semiconductor host matrix including a plurality of elements and having electronic configurations which have an energy gap and a density of localized states therein, said method comprising depositing on a substrate a solid amorphous alloy semiconductor host matrix including a plurality of elements by glow discharge decomposition of a plurality of compounds, each containing at least one of said elements and at least one alterant element, in a partial vacuum having an atmosphere separately containing at least one different alterant element and not derived from the compounds, wherein said different at least one alterant elements of said compounds and separately contained in said atmosphere comprise at least fluorine and are incorporated in said amorphous alloy semiconductor host matrix during deposition thereof yielding an altered amorphous alloy semiconductor material having altered electronic configurations with a reduced density of localized states in the energy gap.

Claim 40

Dependent Claim 18 words

The method as defined in claim 35 wherein said alterant elements are made reactive by the glow discharge.

Claim 41

Dependent Claim 15 words

The method as defined in claim 35 wherein said alterant elements comprise at least hydrogen.

Claim 42

Dependent Claim 26 words

The method as defined in claim 35 wherein the amorphous alloy semiconductor material includes elements from Groups III, IV, V and VI of the periodic table.

Claim 43

Dependent Claim 22 words

The method as defined in claim 35 wherein the amorphous alloy semiconductor material includes boron, carbon or nitrogen to withstand high temperatures.

Claim 44

Dependent Claim 74 words

The method as defined in claim 35 wherein the atmosphere for the glow discharge decomposition separately contains a modifier element which is incorporated in said amorphous alloy semiconductor host matrix during the formation thereof yielding a modified amorphous alloy semiconductor material having modified electronic configurations with the introduction of localized states in the energy gap, such that the Fermi level is moved to the vicinity of either the valence band or the conduction band.

Claim 45

Dependent Claim 18 words

The method as defined in claim 40 wherein said modifier material is made reactive by the glow discharge.

Claim 46

Independent Claim 96 words

The method of producing an amorphous semiconductor film comprising a solid amorphous semiconductor host matrix with electronic configurations which have an energy gap and a low density of localized states therein, said method comprising depositing on a substrate a solid amorphous semiconductor host matrix by glow discharge decomposition of at least one compound and incorporating in said amorphous semiconductor host matrix during deposition thereof a plurality of different complementary alterant elements, including at least fluorine, yielding an altered amorphous semiconductor material having altered electronic configurations with a reduced density of localized states in the energy gap.

Claim 47

Independent Claim 96 words

The method of producing an amorphous semiconductor film comprising a solid amorphous semiconductor host matrix with electronic configurations which have an energy gap and a low density of localized states therein, said method comprising depositing on a substrate a solid amorphous semiconductor host matrix by glow discharge decomposition of at least one compound and incorporating in said amorphous semiconductor host matrix during deposition thereof a plurality of different complementary alterant elements, including at least fluorine, yielding an altered amorphous semiconductor material having altered electronic configurations with a reduced density of localized states in the energy gap.

Claim 48

Dependent Claim 35 words

The method as defined in claim 42 wherein the reduced density of localized states occur near the center of the energy gap and in the upper half and/or the lower half of the energy gap.

Claim 49

Dependent Claim 18 words

The method as defined in claim 42 wherein said alterant elements are made reactive by the glow discharge.

Claim 50

Dependent Claim 15 words

The method as defined in claim 42 wherein said compensating elements comprise at least hydrogen.

Claim 51

Dependent Claim 41 words

The method as defined in claim 42 comprising incorporating in said amorphous semiconductor host matrix during deposition thereof a modifier element yielding a modified amorphous semiconductor material having modified electronic configurations with the introduction of localized states in the energy gap.

Claim 52

Dependent Claim 60 words

The method as defined in claim 43 comprising incorporating in said amorphous semiconductor host matrix during deposition thereof a modifier element yielding a modified amorphous semiconductor material having modified electronic configuration with the introduction of localized states in the energy gap, such that the Fermi level is moved to the vicinity of either the valence band or the conduction band.

Claim 53

Dependent Claim 18 words

The method as defined in claim 46 wherein said modifier element is made reactive by the glow discharge.

Claim 54

Independent Claim 171 words

The method of making a semiconductor film comprising a solid amorphous semiconductor host matrix including at least one element and having electronic configurations which have an energy gap and a density of localized states therein, said method comprising depositing on a substrate a solid amorphous semiconductor host matrix including at least one element by glow discharge decomposition of a compound containing said at least one element and at least one alterant element comprising fluorine in a partial vacuum having an atmosphere separately containing at least one alterant element different from said at least one alterant element of the compound, wherein said at least one different alterant element separately contained in the atmosphere facilitates the glow discharge decomposition of said compound and deposition of said amorphous semiconductor host matrix, and wherein said at least one alterant element of said compound is incorporated in said amorphous semiconductor host matrix during deposition thereof yielding an altered amorphous semiconductor material having altered electronic configurations with a reduced density of localized states in the energy gap.

Claim 55

Independent Claim 171 words

The method of making a semiconductor film comprising a solid amorphous semiconductor host matrix including at least one element and having electronic configurations which have an energy gap and a density of localized states therein, said method comprising depositing on a substrate a solid amorphous semiconductor host matrix including at least one element by glow discharge decomposition of a compound containing said at least one element and at least one alterant element comprising fluorine in a partial vacuum having an atmosphere separately containing at least one alterant element different from said at least one alterant element of the compound, wherein said at least one different alterant element separately contained in the atmosphere facilitates the glow discharge decomposition of said compound and deposition of said amorphous semiconductor host matrix, and wherein said at least one alterant element of said compound is incorporated in said amorphous semiconductor host matrix during deposition thereof yielding an altered amorphous semiconductor material having altered electronic configurations with a reduced density of localized states in the energy gap.

Claim 56

Dependent Claim 18 words

The method as defined in claim 49 wherein said alterant elements are made reactive by the glow discharge.

Claim 57

Dependent Claim 21 words

The method as defined in claim 49 wherein said at least one element of the amorphous semiconductor host matrix includes silicon.

Claim 58

Dependent Claim 19 words

The method as defined in claim 49 wherein said compound includes silicon and fluorine and said atmosphere includes hydrogen.

Claim 59

Dependent Claim 13 words

The method as defined in claim 52 wherein said compound comprises silicon tetrafluoride.

Claim 60

Independent Claim 101 words

The method of making a semiconductor film comprising a solid amorphous semiconductor host matrix including silicon and having electronic configurations which have an energy gap and a density of localized states therein, said method comprising depositing on a substrate a solid amorphous semiconductor host matrix including silicon by glow discharge decomposition of a compound containing silicon and an alterant element including fluorine, wherein said alterant element of said compound is incorporated in said amorphous semiconductor host matrix during deposition thereof yielding an altered amorphous semiconductor material having altered electronic configurations with a reduced density of localized states in the energy gap.

Claim 61

Independent Claim 101 words

The method of making a semiconductor film comprising a solid amorphous semiconductor host matrix including silicon and having electronic configurations which have an energy gap and a density of localized states therein, said method comprising depositing on a substrate a solid amorphous semiconductor host matrix including silicon by glow discharge decomposition of a compound containing silicon and an alterant element including fluorine, wherein said alterant element of said compound is incorporated in said amorphous semiconductor host matrix during deposition thereof yielding an altered amorphous semiconductor material having altered electronic configurations with a reduced density of localized states in the energy gap.

Claim 62

Dependent Claim 56 words

The method as defined in claim 49 wherein the atmosphere for the glow discharge decomposition separately contains a modifier element which is incorporated in said amorphous semiconductor host matrix in parts per million during formation thereof yielding a modified amorphous semiconductor material having modified electronic configurations with the introduction of localized states in the energy gap.

Claim 63

Dependent Claim 33 words

The method as defined in claim 55 wherein the modified amorphous semiconductor material is such that the Fermi level is moved to the vicinity of either the valence band or the conduction band.

Claim 64

Dependent Claim 18 words

The method as defined in claim 55 wherein said modifier element is made reactive by the glow discharge.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1983-10-07	1984-04-07	1984-10-07	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1987-10-07	1988-04-07	1988-10-07	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1991-10-07	1992-04-07	1992-10-07	$7700.00	Window Closed / Lapsed

Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process

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