US4047976A
Expired / Lapsed
US
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Method for manufacturing a high-speed semiconductor device
Assignee: Motorola Solutions Inc
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Filing: 1976-06-21
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Granted: 1977-09-13
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Expires: 1996-06-21
Abstract
Abstract A method for manufacturing high speed semiconductor devices by selectively reducing the minority carrier lifetime in regions susceptible to minority carrier charge storage. The selective reduction is achieved by implanting ions of low atomic weight into the surface of the semiconductor crystal in order to locally reduce the sub-surface lifetime.
Inventors
- 👤 Jerry L. Bledsoe
- 👤 Clarence A. Lund
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 13:12
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D62/00; H10D62/50; H10D62/53; H10P30/208; Y; Y10; Y10S; Y10S438/00; Y10S438/904
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
25 words
A method for increasing the switching speed of a semiconductor device comprising the step of selectively reducing minority carrier lifetime by high energy proton implantation.
Claim 2
Independent Claim
25 words
A method for increasing the switching speed of a semiconductor device comprising the step of selectively reducing minority carrier lifetime by high energy proton implantation.
Claim 3
Dependent Claim
25 words
The method of claim 1 where the semiconductor device is a transistor and the lifetime is selectively reduced in the collector region of the transistor.
Claim 4
Dependent Claim
17 words
The method of claim 2 where the energy of the proton implantation is 150 keV or greater.
Claim 5
Independent Claim
33 words
A method for controlling the relative switching speeds of active devices on a common semiconductor substrate comprising the steps of reducing minority carrier lifetime in preselected active regions by high energy proton implantation.
Claim 6
Independent Claim
33 words
A method for controlling the relative switching speeds of active devices on a common semiconductor substrate comprising the steps of reducing minority carrier lifetime in preselected active regions by high energy proton implantation.
Claim 7
Dependent Claim
16 words
The method of claim 4 where the protons have an energy of 150 keV or greater.
Claim 8
Dependent Claim
33 words
The method of claim 4 where said preselected active regions are determined by masking other regions with a maskant having a lower projected range for said implanted species than said preselected active regions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-12 | 1981-03-14 | 1981-09-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-12 | 1985-03-14 | 1985-09-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-12 | 1989-03-14 | 1989-09-13 | $7700.00 | Window Closed / Lapsed |