Plasma enhanced deposition of semiconductors

Claim 1

A method for depositing large single crystal semiconductor thin films on alkali halide substrates which comprises: a. providing a reaction and chamber means associated therewith for maintaining said chamber at a controllable low pressure; b. providing means for generating a plasma within at least a portion of the reaction chamber, said plasma zone having a primary zone and a secondary zone; c. providing a single crystal alkali halide substrate within the reaction chamber within the plasma zone, said substrate closely matching the semiconductor material to be applied in crystal structure and lattice parameter but having a melting point which is less than the melting point of the semiconductor to be applied, said substrate having associated means for maintaining said substrate at a controllable elevated temperature; d. maintaining the substrate at an elevated temperature and introducing at least one semiconductor precursor gas into the reaction chamber and causing at least a substantial part of the at least one gas to flow through the plasma zone and over the substrate, and then removing said at least one precursor gas from the reaction chamber; while maintaining the reaction chamber at a pressure of from 0.1 to 10 torr; whereby the semiconductor precursor gas will be largely decomposed in the plasma zone and the semiconductor will be deposited epitaxially on the alkali halide substrate while the substrate is held at a lower temperature than would be required if thermal decomposition was employed to decompose the precursor gas, thereby minimizing contamination of the deposited semiconductor by the substrate material.

Claim 2

A method for depositing large single crystal semiconductor thin films on alkali halide substrates which comprises: a. providing a reaction and chamber means associated therewith for maintaining said chamber at a controllable low pressure; b. providing means for generating a plasma within at least a portion of the reaction chamber, said plasma zone having a primary zone and a secondary zone; c. providing a single crystal alkali halide substrate within the reaction chamber within the plasma zone, said substrate closely matching the semiconductor material to be applied in crystal structure and lattice parameter but having a melting point which is less than the melting point of the semiconductor to be applied, said substrate having associated means for maintaining said substrate at a controllable elevated temperature; d. maintaining the substrate at an elevated temperature and introducing at least one semiconductor precursor gas into the reaction chamber and causing at least a substantial part of the at least one gas to flow through the plasma zone and over the substrate, and then removing said at least one precursor gas from the reaction chamber; while maintaining the reaction chamber at a pressure of from 0.1 to 10 torr; whereby the semiconductor precursor gas will be largely decomposed in the plasma zone and the semiconductor will be deposited epitaxially on the alkali halide substrate while the substrate is held at a lower temperature than would be required if thermal decomposition was employed to decompose the precursor gas, thereby minimizing contamination of the deposited semiconductor by the substrate material.