US3047438A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitaxial semiconductor deposition and apparatus
Assignee: International Business Machines Corp
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Filing: 1959-05-28
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Granted: 1962-07-31
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Expires: 1979-05-28
Abstract
No abstract record available.
Inventors
- 👤 John C Marinace
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 21:37
CPC Classifications
H; H10; H10P; H10P95/00; C; C22; C22B; C22B41/00; C23; C23C; C23C16/00; C23C16/44; C23C16/46; C25; C25F; C25F3/00; C25F3/02; C25F3/12; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/02; C30B29/08; H10D; H10D99/00; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2924; H10P14/2925; H10P14/36; Y; Y10; Y10S; Y10S148/00; Y10S148/006; Y10S148/026; Y10S148/05; Y10S148/056; Y10S148/071; Y10S148/085; Y10S148/135; Y10S438/00; Y10S438/914; Y10S438/925; Y10S438/977; Y10S438/979
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
73 words
THE METHOD OF FORMING A STRUCTURE OF GERMANIUM SEMICONDUCTOR MATERIAL COMPRISING POSITIONING A MONOCRYSTALLINE GERMANIUM SUBSTRATE, A SOURCE OF P CONDUCTIVITY TYPE GERMANIUM, A SOURCE OF N CONDUCTIVITY TYPE GERMANIUM AND A SOURCE OF IODINE EACH IN A SEPARATE LOCATION IN A SEALED CONTAINER MAINTAINING THE SUBSTRATE LOCATION IN SAID CONTAINER AT APPROXIMATELY 400*C. AND SELECTIVELY MAINTAINING EACH LOCATION OF SOURCE GERMANIUM IN SAID CONTAINER IN THE RANGE OF APPROXIMATELY 500 TO 600*C.
References Cited (Backward Citations)
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Cited
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US2701216A
Cited
US2602033A
Cited
US2804405A
Cited
US2766144A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-07-30 | 1966-01-29 | 1966-07-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-07-30 | 1970-01-29 | 1970-07-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-07-30 | 1974-01-29 | 1974-07-31 | $7700.00 | Window Closed / Lapsed |