EP0254589A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Process for preparation of semiconductor device
Assignee: Fujitsu Ltd
•
Filing: 1987-07-24
•
Granted: —
•
Expires: 2007-07-24
Abstract
Abstract A process for the preparation of a photodiode or other semiconductor device by the plasma chemical vapour deposition of amorphous silicon on a substrate, which comprises generating plasma in a deposition furnace by using a high frequency wave of less than 1 MHz to deposit an amorphous silicon film, and then exposing the amorphous silicon film to an oxygen plasma.
Inventors
- 👤 Kanetake Takasaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:32
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; C23C16/22; C23C16/24; H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
62 words
A process in which a semiconductor device is made by a process comprising plasma CVD of amorphous silicon onto a substrate in a deposition furnace in which the plasma is generated using a high frequency wave, characterised in that the high frequency wave has a frequency of less than 1 MHz and the resultant amorphous silicon film is exposed to O₂ plasma.
Claim 2
Dependent Claim
62 words
A process in which a semiconductor device is made by a process comprising plasma CVD of amorphous silicon onto a substrate in a deposition furnace in which the plasma is generated using a high frequency wave, characterised in that the high frequency wave has a frequency of less than 1 MHz and the resultant amorphous silicon film is exposed to O₂ plasma.
Claim 3
Dependent Claim
31 words
A process according to claim 1 in which the O₂ plasma is generated in the same deposition furnace and the amorphous silicon film is irradiated by the plasma in that furnace.
Claim 4
Dependent Claim
34 words
A process according to claim 1 or claim 2, in which the plasma chemical vapour deposition is carried out using a wave of a frequency of 30 to 500 KHz, preferably about 200 KHz.
Claim 5
Dependent Claim
31 words
A process according to claim 3, wherein the plasma chemical vapour deposition is carried out with a power of about 100 mW/cm² and preferably under a pressure of about 1 Torr.
Claim 6
Dependent Claim
27 words
A process according to any preceding claim, wherein the oxygen plasma treatment is carried out with a wave of a frequency of 30 KHz to 13.56 MHz.
Claim 7
Dependent Claim
23 words
A process according to any preceding claim, wherein the oxygen plasma treatment is carried out at a substrate temperature of 200 to 350°C.
Claim 8
Dependent Claim
23 words
A process according to any preceding claim, wherein the oxygen plasma treatment is carried out under a pressure of 0.2 to 2 Torr.
Claim 9
Dependent Claim
23 words
A process according to any preceding claim, wherein the oxygen plasma treatment is carried out with a power of 50 to 500 mW/cm².
Claim 10
Dependent Claim
20 words
A process according to any preceding claim, in which the exposure to oxygen is conducted for at least 20 minutes.
Claim 11
Dependent Claim
14 words
A process according to any preceding claim, in which the semiconductor is a photodiode.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.