US5710067A
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Silicon oxime film
Assignee: GlobalFoundries Inc
•
Filing: 1995-06-07
•
Granted: 1998-01-20
•
Expires: 2015-06-07
Abstract
Abstract A silicon oxime film is formed by plasma enhanced chemical vapor deposition. The silicon oxime film is useful as an anti-reflection layer during photolithography, as an etch stop, and as a protection layer.
Inventors
- 👤 David K. Foote
- 👤 Subash Gupta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/081; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/662; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 112
Claim 1
Independent Claim
56 words
A film comprising a layer of silicon oxime having the formula Si.sub.(1-x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, wherein the silicon oxime comprises about 10-20 atom percent hydrogen and has a thickness of about 200 Å to about 600 Å.
Claim 2
Dependent Claim
56 words
A film comprising a layer of silicon oxime having the formula Si.sub.(1-x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, wherein the silicon oxime comprises about 10-20 atom percent hydrogen and has a thickness of about 200 Å to about 600 Å.
Claim 3
Dependent Claim
11 words
The film according to claim 1, comprising a plurality of layers.
Claim 4
Dependent Claim
19 words
The film according to claim 2, comprising a semiconductive or conductive layer and a layer of silicon oxime thereon.
Claim 5
Dependent Claim
16 words
The film according to claim 3, wherein the semiconductive layer comprises polycrystalline microcrystalline, and/or amorphous silicon.
Claim 6
Dependent Claim
37 words
The film according to claim 3, wherein the conductive layer comprises a material selected from the group consisting of aluminum, aluminum-silicon alloys, refractory metals, refractory metal alloys and refractory metal compounds, and semiconductive materials doped with impurities.
Claim 7
Dependent Claim
28 words
The film according to claim 3, wherein the conductive layer comprises a barrier layer of titanium, titanium nitride or titanium-tungsten, and a layer of a conductive material thereon.
Claim 8
Dependent Claim
17 words
The film according to claim 2, comprising an insulating layer and a layer of silicon oxime thereon.
Claim 9
Dependent Claim
24 words
The film according to claim 7, wherein the insulating layer comprises a material selected in the group consisting of silicon dioxide and silicon nitride.
Claim 10
Dependent Claim
17 words
A semiconductor device having a semiconductor or conductor feature pattern comprising the film according to claim 4.
Claim 11
Dependent Claim
14 words
A semiconductor device having an insulating layer comprising the film according to claim 7.
Claim 12
Dependent Claim
10 words
A semiconductor device containing the film according to claim 1.
Claim 13
Dependent Claim
14 words
The silicon oxime according to claim 1, having a thickness of about 400 Å.
Claim 14
Dependent Claim
18 words
The silicon oxime according to claim 1, having a light reflectivity at 365 nm not greater than 2%.
Claim 15
Dependent Claim
19 words
The film according to claim 1, wherein the silicon oxime comprises about 15 to about 25 atom percent oxygen.
Claim 16
Independent Claim
106 words
A method of producing a film comprising a layer of silicon oxime having the formula Si.sub.(1-x-y-z) :N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises reacting sources of silicon, nitrogen, oxygen and hydrogen in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, at a temperature of about 275° C. to about 475° C. and at a pressure of about 1 to about 10 Torr, wherein the silicon oxime has a thickness of about 100 Å to about 600 Å.
Claim 17
Independent Claim
106 words
A method of producing a film comprising a layer of silicon oxime having the formula Si.sub.(1-x-y-z) :N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises reacting sources of silicon, nitrogen, oxygen and hydrogen in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, at a temperature of about 275° C. to about 475° C. and at a pressure of about 1 to about 10 Torr, wherein the silicon oxime has a thickness of about 100 Å to about 600 Å.
Claim 18
Dependent Claim
32 words
The method according to claim 15, wherein the amount of nitrogen present is greater than ten times the amount of oxygen present and the silicon oxime comprises about 10-20 atom percent hydrogen.
Claim 19
Independent Claim
107 words
A method of forming a film comprising silicon oxime having the formula of Si.sub.(1-x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z) N x O y :H z on a substrate by plasma enhanced chemical vapor deposition, wherein deposition is conducted at a temperature of about 275° C. to about 475° C., and a pressure of from about 1 to about 10 torr, and wherein said silicon oxime layer has a thickness of about 200 Å to about 600 Å.
Claim 20
Independent Claim
107 words
A method of forming a film comprising silicon oxime having the formula of Si.sub.(1-x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z) N x O y :H z on a substrate by plasma enhanced chemical vapor deposition, wherein deposition is conducted at a temperature of about 275° C. to about 475° C., and a pressure of from about 1 to about 10 torr, and wherein said silicon oxime layer has a thickness of about 200 Å to about 600 Å.
Claim 21
Dependent Claim
31 words
The method according to claim 17, conducted under dynamic non-equilibrium conditions in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms.
Claim 22
Dependent Claim
14 words
The method according to claim 18, comprising reacting source gases for silicon and nitrogen.
Claim 23
Dependent Claim
26 words
The method according to claim 19, wherein the source gas for silicon is silane and the source gas for nitrogen is nitrous oxide or nitrogen gas.
Claim 24
Dependent Claim
16 words
The method according to claim 17, wherein the silicon oxime comprises about 10-20 atom percent hydrogen.
Claim 25
Dependent Claim
32 words
The method according to claim 18, wherein deposition is conducted at a temperature of about 350° C. to about 450° C. and a pressure of from about 2 to about 3 Torr.
Claim 26
Independent Claim
112 words
A method of manufacturing a semiconductor device, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1 x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, by plasma enhanced chemical vapor deposition on a substrate under dynamic non-equilibrium conditions in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, and at a temperature of about 275° C. to about 475° C., wherein the silicon oxime comprises about 10-20 atom percent hydrogen and the layer has a thickness of about 200 Å to about 600 Å.
Claim 27
Independent Claim
112 words
A method of manufacturing a semiconductor device, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1 x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, by plasma enhanced chemical vapor deposition on a substrate under dynamic non-equilibrium conditions in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, and at a temperature of about 275° C. to about 475° C., wherein the silicon oxime comprises about 10-20 atom percent hydrogen and the layer has a thickness of about 200 Å to about 600 Å.
Claim 28
Dependent Claim
15 words
The method according to claim 23, wherein the substrate comprises a semiconductive or conductive material.
Claim 29
Dependent Claim
16 words
The method according to claim 24, wherein the semiconductive material comprises polycrystalline, microcrystalline and/or amorphous silicon.
Claim 30
Dependent Claim
31 words
The method according to claim 24, wherein the conductive material comprises aluminum, an aluminum silicon alloy, refractory metals, refractory metal alloys, and refractory metal compounds, and semiconductive materials doped with impurities.
Claim 31
Dependent Claim
50 words
The method according to claim 23, further comprising: depositing a layer of photoresist material on the silicon oxime film; imagewise exposing the layer of photoresist material through a photomask defining a desired pattern; developing the exposed photoresist material; and etching the underlying silicon oxime and substrate to form the pattern.
Claim 32
Dependent Claim
48 words
The method according to claim 27, wherein the substrate comprises a layer of conductive material, and the layer of photoresist material is imagewise exposed through a photomask defining a conductive pattern comprising a plurality of conductive lines and an interwiring spacing therebetween of less than about 0.3 microns.
Claim 33
Dependent Claim
17 words
The method according to claim 23, wherein the silicon oxime layer functions as an etch stop layer.
Claim 34
Dependent Claim
13 words
The method according to claim 23, wherein the substrate comprises an insulating material.
Claim 35
Dependent Claim
13 words
The method according to claim 30, wherein the insulating material is silicon dioxide.
Claim 36
Dependent Claim
16 words
The method according to claim 23, comprising depositing a silicon oxime anti-reflective coating on a substrate.
Claim 37
Dependent Claim
59 words
The method according to claim 32, further comprising: depositing a layer of photoresist material on the silicon oxime anti-reflective coating; imagewise exposing the photoresist material through a photomask defining a pattern comprising a plurality of fine features and spaces; developing the exposed photoresist material; and dry etching the underlying silicon oxime anti-reflective coating and substrate to form the pattern.
Claim 38
Dependent Claim
24 words
The method according to claim 32, wherein the silicon oxime anti-reflective coating has a light reflectivity at 365 nm not greater than about 2%.
Claim 39
Dependent Claim
23 words
The method according to claim 33, wherein the silicon oxime anti-reflective coating has a light reflectivity at 365 nm less than about 1%.
Claim 40
Dependent Claim
19 words
The film according to claim 1, having a light reflectivity at 365 nm of about 1% to about 35%.
Claim 41
Dependent Claim
19 words
An anti-reflective coating comprising the film according to claim 1 on a substrate for I-line and deep UV applications.
Claim 42
Dependent Claim
18 words
The silicon oxime film according to claim 1, wherein the silicon oxime comprises about 15% atomic percent hydrogen.
Claim 43
Dependent Claim
15 words
The silicon oxime film according to claim 2, which is soluble in hot phosphoric acid.
Claim 44
Dependent Claim
20 words
The silicon oxime film according to claim 2, which has a dry plasma etchability of about 10% of silicon dioxide.
Claim 45
Dependent Claim
31 words
The silicon oxime film according to claim 2, having a thickness of about 350 Å to about 400 Å and a reflectivity of about 1 to about 5% at 365 nm.
Claim 46
Dependent Claim
50 words
A multilayer film comprising: a semiconductive layer comprising polycrystalline, microcrystalline, and/or amorphous silicon; and a layer of silicon oxime thereon, wherein the silicon oxime has the formula Si.sub.(1-x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively.
Claim 47
Dependent Claim
50 words
A multilayer film comprising: a semiconductive layer comprising polycrystalline, microcrystalline, and/or amorphous silicon; and a layer of silicon oxime thereon, wherein the silicon oxime has the formula Si.sub.(1-x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively.
Claim 48
Dependent Claim
11 words
A semiconductor device containing the multilayer film according to claim 42.
Claim 49
Dependent Claim
23 words
The multilayer film according to claim 42, wherein the silicon oxime film has a thickness of about 200 Å to about 600 Å.
Claim 50
Dependent Claim
19 words
The multilayer film according to claim 44, wherein the silicon oxime film has a thickness of about 400 Å.
Claim 51
Dependent Claim
23 words
The multilayer film according to claim 42, wherein the silicon oxime film has a light reflectivity at 365 nm not greater than 2%.
Claim 52
Dependent Claim
20 words
The multilayer film according to claim 44, wherein the silicon oxime comprises about 15 to about 25 atom percent oxygen.
Claim 53
Dependent Claim
17 words
The multilayer film according to claim 47, wherein the silicon oxime comprises about 10-20 atom percent hydrogen.
Claim 54
Dependent Claim
25 words
The multilayer film according to claim 42, wherein the silicon oxime film has a light reflectivity at 365 nm of about 1% to about 35%.
Claim 55
Dependent Claim
25 words
The multilayer film according to claim 42, wherein the silicon oxime film comprises an anti-reflective coating on a substrate for I-line and deep UV applications.
Claim 56
Dependent Claim
17 words
The multilayer film according to claim 48, wherein the silicon oxime comprises about 15% atomic percent hydrogen.
Claim 57
Dependent Claim
64 words
A multilayer film comprising: a conductive layer comprising a barrier layer of titanium, titanium nitride or titanium-tungsten, a layer of a conductive material thereon; and a layer of silicon oxime on the conductive layer, wherein the silicon oxime has the formula Si.sub.(1-x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively.
Claim 58
Dependent Claim
64 words
A multilayer film comprising: a conductive layer comprising a barrier layer of titanium, titanium nitride or titanium-tungsten, a layer of a conductive material thereon; and a layer of silicon oxime on the conductive layer, wherein the silicon oxime has the formula Si.sub.(1-x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively.
Claim 59
Dependent Claim
11 words
A semiconductor device containing the multilayer film according to claim 52.
Claim 60
Dependent Claim
23 words
The multilayer film according to claim 52, wherein the silicon oxime film has a thickness of about 200 Å to about 600 Å.
Claim 61
Dependent Claim
19 words
The multilayer film according to claim 54, wherein the silicon oxime film has a thickness of about 400 Å.
Claim 62
Dependent Claim
23 words
The multilayer film according to claim 53, wherein the silicon oxime film has a light reflectivity at 365 nm not greater than 2%.
Claim 63
Dependent Claim
20 words
The multilayer film according to claim 54, wherein the silicon oxime comprises about 15 to about 25 atom percent oxygen.
Claim 64
Dependent Claim
17 words
The multilayer film according to claim 57, wherein the silicon oxime comprises about 10-20 atom percent hydrogen.
Claim 65
Dependent Claim
25 words
The multilayer film according to claim 52, wherein the silicon oxime film has a light reflectivity at 365 nm of about 1% to about 35%.
Claim 66
Dependent Claim
25 words
The multilayer film according to claim 52, wherein the silicon oxime film comprises an anti-reflective coating on a substrate for I-line and deep UV applications.
Claim 67
Dependent Claim
17 words
The multilayer film according to claim 58, wherein the silicon oxime comprises about 15% atomic percent hydrogen.
Claim 68
Independent Claim
82 words
A method of manufacturing a semiconductor device, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, by plasma enhanced chemical vapor deposition on a semiconductive substrate, comprising polycrystalline, microcrystalline and/or amorphous silicon, under dynamic non-equilibrium conditions in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms.
Claim 69
Independent Claim
82 words
A method of manufacturing a semiconductor device, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, by plasma enhanced chemical vapor deposition on a semiconductive substrate, comprising polycrystalline, microcrystalline and/or amorphous silicon, under dynamic non-equilibrium conditions in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms.
Claim 70
Dependent Claim
50 words
The method according to claim 62, further comprising: depositing a layer of photoresist material on the silicon oxime film; imagewise exposing the layer of photoresist material through a photomask defining a desired pattern; developing the exposed photoresist material; and etching the underlying silicon oxime and substrate to form the pattern.
Claim 71
Dependent Claim
17 words
The method according to claim 62, wherein the silicon oxime layer functions as an etch stop layer.
Claim 72
Dependent Claim
16 words
The method according to claim 62, comprising depositing a silicon oxime anti-reflective coating on the substrate.
Claim 73
Dependent Claim
59 words
The method according to claim 62, further comprising: depositing a layer of photoresist material on the silicon oxime anti-reflective coating; imagewise exposing the photoresist material through a photomask defining a pattern comprising a plurality of fine features and spaces; developing the exposed photoresist material; and dry etching the underlying silicon oxime anti-reflective coating and substrate to form the pattern.
Claim 74
Dependent Claim
24 words
The method according to claim 65, wherein the silicon oxime anti-reflective coating has a light reflectivity at 365 nm not greater than about 2%.
Claim 75
Dependent Claim
23 words
The method according to claim 66, wherein the silicon oxime anti-reflective coating has a light reflectivity at 365 nm less than about 1%.
Claim 76
Dependent Claim
60 words
A film comprising a layer of silicon oxime having the formula Si.sub.(1-x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, wherein the silicon oxime comprises about 10-20 atom percent hydrogen the layer of silicon oxime has a light reflectivity at 365 nm not greater than 2%.
Claim 77
Dependent Claim
60 words
A film comprising a layer of silicon oxime having the formula Si.sub.(1-x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, wherein the silicon oxime comprises about 10-20 atom percent hydrogen the layer of silicon oxime has a light reflectivity at 365 nm not greater than 2%.
Claim 78
Dependent Claim
11 words
The film according to claim 19, comprising a plurality of layers.
Claim 79
Dependent Claim
19 words
The film according to claim 70, comprising a semiconductive or conductive layer and a layer of silicon oxime thereon.
Claim 80
Dependent Claim
16 words
The film according to claim 71, wherein the semiconductive layer comprises polycrystalline microcrystalline, and/or amorphous silicon.
Claim 81
Dependent Claim
37 words
The film according to claim 71, wherein the conductive layer comprises a material selected from the group consisting of aluminum, aluminum-silicon alloys, refractory metals, refractory metal alloys and refractory metal compounds, and semiconductive materials doped with impurities.
Claim 82
Dependent Claim
28 words
The film according to claim 71, wherein the conductive layer comprises a barrier layer of titanium, titanium nitride or titanium-tungsten, and a layer of a conductive material thereon.
Claim 83
Dependent Claim
17 words
The film according to claim 70, comprising an insulating layer and a layer of silicon oxime thereon.
Claim 84
Dependent Claim
24 words
The film according to claim 75, wherein the insulating layer comprises a material selected in the group consisting of silicon dioxide and silicon nitride.
Claim 85
Dependent Claim
17 words
A semiconductor device having a semiconductor or conductor feature pattern comprising the film according to claim 71.
Claim 86
Dependent Claim
14 words
A semiconductor device having an insulating layer comprising the film according to claim 75.
Claim 87
Dependent Claim
10 words
A semiconductor device containing the film according to claim 69.
Claim 88
Dependent Claim
18 words
The silicon oxime according to claim 66, having a thickness of about 200 Å to about 600 Å.
Claim 89
Dependent Claim
14 words
The silicon oxime according to claim 80, having a thickness of about 400 Å.
Claim 90
Dependent Claim
19 words
The film according to claim 80, wherein the silicon oxime comprises about 15 to about 25 atom percent oxygen.
Claim 91
Independent Claim
106 words
A method of producing a film comprising a layer of silicon oxime having the formula Si.sub.(1-x-y-z) N x O y :H x , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises reacting sources of silicon, nitrogen, oxygen and hydrogen in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, at a temperature of about 275° C. to about 475° C. and at a pressure of about 1 to about 10 Torr, wherein the silicon oxime has a light reflectivity at 365 nm not greater than 2%.
Claim 92
Independent Claim
106 words
A method of producing a film comprising a layer of silicon oxime having the formula Si.sub.(1-x-y-z) N x O y :H x , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises reacting sources of silicon, nitrogen, oxygen and hydrogen in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, at a temperature of about 275° C. to about 475° C. and at a pressure of about 1 to about 10 Torr, wherein the silicon oxime has a light reflectivity at 365 nm not greater than 2%.
Claim 93
Dependent Claim
32 words
The method according to claim 83, wherein the amount of nitrogen present is greater than ten times the amount of oxygen present and the silicon oxime comprises about 10-20 atom percent hydrogen.
Claim 94
Independent Claim
106 words
A method of forming a film comprising silicon oxime having the formula of Si.sub.(1-x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z) N x O y :H z on a substrate by plasma enhanced chemical vapor deposition, wherein deposition is conducted at a temperature of about 275° C. to about 475° C., and a pressure of from about 1 to about 10 torr, and the silicon oxime layer has a light reflectivity at 365 nm not greater than 2%.
Claim 95
Independent Claim
106 words
A method of forming a film comprising silicon oxime having the formula of Si.sub.(1-x-y-z) N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z) N x O y :H z on a substrate by plasma enhanced chemical vapor deposition, wherein deposition is conducted at a temperature of about 275° C. to about 475° C., and a pressure of from about 1 to about 10 torr, and the silicon oxime layer has a light reflectivity at 365 nm not greater than 2%.
Claim 96
Dependent Claim
31 words
The method according to claim 85, conducted under dynamic non-equilibrium conditions in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms.
Claim 97
Dependent Claim
14 words
The method according to claim 86, comprising reacting source gases for silicon and nitrogen.
Claim 98
Dependent Claim
26 words
The method according to claim 87, wherein the source gas for silicon is silane and the source gas for nitrogen is nitrous oxide or nitrogen gas.
Claim 99
Dependent Claim
16 words
The method according to claim 88, wherein the silicon oxime comprises about 10-20 atom percent hydrogen.
Claim 100
Dependent Claim
32 words
The method according to claim 85, wherein deposition is conducted at a temperature of about 350° C. to about 450° C. and a pressure of from about 2 to about 3 Torr.
Claim 101
Independent Claim
110 words
A method of manufacturing a semiconductor device, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z)N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, by plasma enhanced chemical vapor deposition on a substrate under dynamic non-equilibrium conditions in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, and at a temperature of about 275° C. to about 475° C., wherein the silicon oxime comprises about 10-20 atom percent hydrogen and the layer has a light reflectivity at 365 nm nut greater than 2%.
Claim 102
Independent Claim
110 words
A method of manufacturing a semiconductor device, which method comprises depositing a layer of silicon oxime having the formula Si.sub.(1-x-y-z)N x O y :H z , wherein x, y and z represent the atomic percentage of nitrogen, oxygen and hydrogen, respectively, by plasma enhanced chemical vapor deposition on a substrate under dynamic non-equilibrium conditions in the presence of a stoichiometric excess of nitrogen sufficient to substantially prevent bonding between silicon atoms and oxygen atoms, and at a temperature of about 275° C. to about 475° C., wherein the silicon oxime comprises about 10-20 atom percent hydrogen and the layer has a light reflectivity at 365 nm nut greater than 2%.
Claim 103
Dependent Claim
15 words
The method according to claim 91, wherein the substrate comprises a semiconductive or conductive material.
Claim 104
Dependent Claim
16 words
The method according to claim 92, wherein the semiconductive material comprises polycrystalline, microcrystalline and/or amorphous silicon.
Claim 105
Dependent Claim
31 words
The method according to claim 92, wherein the conductive material comprises aluminum, an aluminum silicon alloy, refractory metals, refractory metal alloys, and refractory metal compounds, and semiconductive materials doped with impurities.
Claim 106
Dependent Claim
50 words
The method according to claim 91, further comprising: depositing a layer of photoresist material on the silicon oxime film; imagewise exposing the layer of photoresist material through a photomask defining a desired pattern; developing the exposed photoresist material; and etching the underlying silicon oxime and substrate to form the pattern.
Claim 107
Dependent Claim
48 words
The method according to claim 95, wherein the substrate comprises a layer of conductive material, and the layer of photoresist material is imagewise exposed through a photomask defining a conductive pattern comprising a plurality of conductive lines and an interwiring spacing therebetween of less than about 0.3 microns.
Claim 108
Dependent Claim
17 words
The method according to claim 91, wherein the silicon oxime layer functions as an etch stop layer.
Claim 109
Dependent Claim
13 words
The method according to claim 91, wherein the substrate comprises an insulating material.
Claim 110
Dependent Claim
13 words
The method according to claim 98, wherein the insulating material is silicon dioxide.
Claim 111
Dependent Claim
16 words
The method according to claim 91, comprising depositing a silicon oxime anti-reflective coating on a substrate.
Claim 112
Dependent Claim
59 words
The method according to claim 100, further comprising: depositing a layer of photoresist material on the silicon oxime anti-reflective coating; imagewise exposing the photoresist material through a photomask defining a pattern comprising a plurality of fine features and spaces; developing the exposed photoresist material; and dry etching the underlying silicon oxime anti-reflective coating and substrate to form the pattern.
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