US4532022A
Expired / Lapsed
US
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Process of producing a semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1983-05-31
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Granted: 1985-07-30
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Expires: 2003-05-31
Abstract
Abstract A silicon nitride film containing from 20 to 70% oxygen, for use as a surface passivation film, has enhanced ultraviolet ray transmissivity while exhibiting the desirable moisture proofness quality of a silicon nitride film.
Inventors
- 👤 Kanetake Takasaki
- 👤 Mikio Takagi
- 👤 Kenji Koyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:00
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/308; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10W; H10W74/00; H10W74/01; H10W74/10; H10W74/131; H10W74/137; H10W74/40; H10W74/43; H10P14/6329; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/081; Y10S148/114; Y10S438/00; Y10S438/958; Y10S438/972
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
150 words
A process for producing a surface passivation film on a semiconductor device comprising a semiconductor substrate, at least one element selected from the class consisting of active and passive elements formed on or in said semiconductor substrate, a first insulating film located on said semiconductor substrate, and electrodes of at least one element disposed on said substrate, said process comprising: subjecting said device to a chemical vapor deposition step in which monosilane is used as a feed gas, ammonia (NH 3 ) is used as a source of nitrogen and nitrous oxide (N 2 O) is used as a source of oxygen, and wherein the ratio of N 2 O to NH 3 +N 2 O is in a range of from about 0.1 to about 0.5, and said passivation film being formed on said substrate and covering said at least one element, said first insulating film, and said electrodes.
Claim 2
Dependent Claim
150 words
A process for producing a surface passivation film on a semiconductor device comprising a semiconductor substrate, at least one element selected from the class consisting of active and passive elements formed on or in said semiconductor substrate, a first insulating film located on said semiconductor substrate, and electrodes of at least one element disposed on said substrate, said process comprising: subjecting said device to a chemical vapor deposition step in which monosilane is used as a feed gas, ammonia (NH 3 ) is used as a source of nitrogen and nitrous oxide (N 2 O) is used as a source of oxygen, and wherein the ratio of N 2 O to NH 3 +N 2 O is in a range of from about 0.1 to about 0.5, and said passivation film being formed on said substrate and covering said at least one element, said first insulating film, and said electrodes.
Claim 3
Dependent Claim
25 words
A process as recited in claim 1, wherein the chemical vapor deposition method is carried out at a temperature of from 700° to 800° C.
Claim 4
Dependent Claim
134 words
A process for producing a surface passivation film on a semiconductor device comprising a semiconductor substrate, at least one element selected from the class consisting of active and passive elements formed on or in said semiconductor substrate, a first insulating film located on said semiconductor substrate, and electrodes of at least said one element disposed on said substrate, said process comprising: subjecting said device to a reactive sputtering step in which silicon is used as a target, ammonia (NH 3 ) or nitrogen (N 2 ) is used as a source of nitrogen, and oxygen (O 2 ) or nitrous oxide (N 2 O) is used as a source of oxygen, and said passivation film being formed on said substrate and covering said at least one element, said first insulating film, and said electrodes.
Claim 5
Dependent Claim
134 words
A process for producing a surface passivation film on a semiconductor device comprising a semiconductor substrate, at least one element selected from the class consisting of active and passive elements formed on or in said semiconductor substrate, a first insulating film located on said semiconductor substrate, and electrodes of at least said one element disposed on said substrate, said process comprising: subjecting said device to a reactive sputtering step in which silicon is used as a target, ammonia (NH 3 ) or nitrogen (N 2 ) is used as a source of nitrogen, and oxygen (O 2 ) or nitrous oxide (N 2 O) is used as a source of oxygen, and said passivation film being formed on said substrate and covering said at least one element, said first insulating film, and said electrodes.
Claim 6
Dependent Claim
81 words
A process for producing a semiconductor device comprising: forming a surface passivation film on said device by a plasma chemical vapor deposition method in which monosilane is used as a feed gas, ammonia (NH 3 ) is used as a source of nitrogen and nitrous oxide (N 2 O) is used as a source of oxygen, and wherein the ratio of N 2 O to NH 3 +N 2 O is in a range of from about 0.1 to about 0.5.
Claim 7
Dependent Claim
81 words
A process for producing a semiconductor device comprising: forming a surface passivation film on said device by a plasma chemical vapor deposition method in which monosilane is used as a feed gas, ammonia (NH 3 ) is used as a source of nitrogen and nitrous oxide (N 2 O) is used as a source of oxygen, and wherein the ratio of N 2 O to NH 3 +N 2 O is in a range of from about 0.1 to about 0.5.
Claim 8
Dependent Claim
27 words
A process as recited in claim 4, wherein the plasma chamical vapor deposition method is carried out at a temperature of from 250° C. to 450° C.
Claim 9
Dependent Claim
25 words
A process as recited in claim 5, wherein the chemical vapor deposition method is carried out at a temperature of from 700° to 800° C.
Claim 10
Dependent Claim
80 words
A process for producing a semiconductor device comprising: forming a surface passivation film on said device by a chemical vapor deposition method in which monosilane is used as a feed gas, ammonia (NH 3 ) is used as a source of nitrogen and nitrous oxide (N 2 O) is used as a source of oxygen, and wherein the ratio of N 2 O to NH 3 +N 2 O is in a range of from about 0.1 to about 0.5.
Claim 11
Dependent Claim
80 words
A process for producing a semiconductor device comprising: forming a surface passivation film on said device by a chemical vapor deposition method in which monosilane is used as a feed gas, ammonia (NH 3 ) is used as a source of nitrogen and nitrous oxide (N 2 O) is used as a source of oxygen, and wherein the ratio of N 2 O to NH 3 +N 2 O is in a range of from about 0.1 to about 0.5.
Claim 12
Dependent Claim
52 words
A process for producing a semiconductor device comprising: forming a surface passivation film on said device by a reactive sputtering method in which silicon is used as a target, ammonia (NH 3 ) is used as a source of nitrogen and oxygen (O 2 ) is used as a source of oxygen.
Claim 13
Dependent Claim
52 words
A process for producing a semiconductor device comprising: forming a surface passivation film on said device by a reactive sputtering method in which silicon is used as a target, ammonia (NH 3 ) is used as a source of nitrogen and oxygen (O 2 ) is used as a source of oxygen.
Claim 14
Dependent Claim
151 words
A process for producing a surface passivation film on a semiconductor device comprising a semiconductor substrate, at least one element selected from the class consisting of active and passive elements formed on or in said semiconductor substrate, a first insulating film located on said semiconductor subsrate, and electrodes of at least said one element disposed on said substrate, said process comprising: subjecting said device to a plasma chemical vapor deposition step in which monosilane is used as a feed gas, ammonia (NH 3 ) is used as a source of nitrogen and nitrous oxide (N 2 O) is used as a source of oxygen, and wherein the ratio of N 2 O to NH 3 +N 2 O is in a range of about 0.1 to about 0.5, and said passivation film being formed on said substrate and covering said at least one element, said first insulating film, and said electrodes.
Claim 15
Dependent Claim
151 words
A process for producing a surface passivation film on a semiconductor device comprising a semiconductor substrate, at least one element selected from the class consisting of active and passive elements formed on or in said semiconductor substrate, a first insulating film located on said semiconductor subsrate, and electrodes of at least said one element disposed on said substrate, said process comprising: subjecting said device to a plasma chemical vapor deposition step in which monosilane is used as a feed gas, ammonia (NH 3 ) is used as a source of nitrogen and nitrous oxide (N 2 O) is used as a source of oxygen, and wherein the ratio of N 2 O to NH 3 +N 2 O is in a range of about 0.1 to about 0.5, and said passivation film being formed on said substrate and covering said at least one element, said first insulating film, and said electrodes.
Claim 16
Dependent Claim
27 words
A process as recited in claim 9, wherein the plasma chemical vapor deposition method is carried out at a temperature of from 250° C. to 450° C.
References Cited (Backward Citations)
US3629088A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1988-07-29 | 1989-01-28 | 1989-07-30 | $2000.00 | Window Closed / Lapsed |
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