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US3629088A Expired / Lapsed US ⏱️ 0.0 years remaining

Sputtering method for deposition of silicon oxynitride

Assignee: Unisys Corp
•
Filing: 1968-07-11
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Granted: 1971-12-21
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Expires: 1988-07-11
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Abstract

Abstract Low temperature deposition of silicon oxynitride on an integrated circuit device is accomplished by the reactive sputtering of high-purity silicon source material in the presence of nitrous oxide and nitrogen. The deposited silicon oxynitride is characterized by an etch rate, breakdown strength and yield higher than those of silicon nitride and a dielectric constant higher than that of silicon oxide.

Inventors

  • 👤 Robert I Frank
  • 👤 William L Moberg

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 21:19
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/113; Y10S148/114; Y10S148/118; Y10S148/158

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 13 words
The method defined in claim 1 wherein said substrate is a semiconductor material.
Claim 2
Dependent Claim 12 words
The method defined in claim 2 wherein said semiconductor material is silicon.
Claim 3
Dependent Claim 14 words
The method defined in claim 3 wherein said silicon is coated with a metal.
Claim 4
Dependent Claim 11 words
The method defined in claim 4 wherein said metal is molybdenum.
Claim 5
Dependent Claim 16 words
The method defined in claim 5 wherein said range is from about 3 to about 5.

References Cited (Backward Citations)

US3485666A Cited
US3422321A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1974-12-20 1975-06-21 1975-12-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1978-12-20 1979-06-21 1979-12-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1982-12-20 1983-06-21 1983-12-21 $7700.00 Window Closed / Lapsed

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