US4543707A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming through holes by differential etching of stacked silicon oxynitride layers
Assignee: Toshiba Corp
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Filing: 1984-06-29
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Granted: 1985-10-01
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Expires: 2004-06-29
Abstract
Abstract A process of manufacturing a semiconductor device by which a through hole such as contact hole with an obtuse opening edge can be formed in an insulation or passivation layer. At least two silicon oxynitride layers in which the nitrogen to oxygen ratio differs from each other are formed on a semiconductor substrate. The etching rate of the top layer is greater than that of the second layer from the top. The stacked silicon oxynitride layers are then selectively etched to form a through hole with an obtuse opening edge.
Inventors
- 👤 Toshiyo Ito
- 👤 Jiro Ohshima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:57
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P50/73; Y; Y10; Y10S; Y10S148/00; Y10S148/042; Y10S148/082; Y10S148/161
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
78 words
A process of producing a semiconductor device comprising the steps of: stacking at least two silicon oxynitride layers of which nitrogen to oxygen ratio differs from each other on a semiconductor substrate, in which the etching rate of the top layer is faster than that of the second layer from the top; and selectively etching the stacked silicon oxynitride layers to form a through hole in the same, thereby providing a through hole with an obtuse opening edge.
Claim 2
Dependent Claim
78 words
A process of producing a semiconductor device comprising the steps of: stacking at least two silicon oxynitride layers of which nitrogen to oxygen ratio differs from each other on a semiconductor substrate, in which the etching rate of the top layer is faster than that of the second layer from the top; and selectively etching the stacked silicon oxynitride layers to form a through hole in the same, thereby providing a through hole with an obtuse opening edge.
Claim 3
Dependent Claim
35 words
The process of claim 1, wherein the nitrogen to oxygen ratio of the top layer is larger than that of the second layer from the top, and the etching is conducted by chemical dry etching.
Claim 4
Dependent Claim
39 words
The process of claim 1, wherein the nitrogen to oxygen ratio of the top layer is smaller than that of the second layer from the top, and the etching is conducted by wet etching using an HF-based etching solution.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-09-30 | 1989-04-01 | 1989-10-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-09-30 | 1993-04-01 | 1993-10-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-09-30 | 1997-04-01 | 1997-10-01 | $7700.00 | Window Closed / Lapsed |