US4363868A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma CVD technique which is employed in a selective oxidation process
Assignee: Fujitsu Ltd
•
Filing: 1980-12-23
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Granted: 1982-12-14
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Expires: 2000-12-23
Abstract
Abstract A selective oxidation process for producing a semiconductor device comprises the step of depositing a silicon oxynitride layer directly on a silicon substrate by a plasma chemical vapor deposition method. After a selective oxidation of the silicon substrate, the silicon oxynitride layer is removed.
Inventors
- 👤 Kanetake Takasaki
- 👤 Mamoru Maeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 02:10
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10P; H10P14/00; H10P14/60; H10P14/61; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10W10/10; H10W10/13; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
69 words
A process for producing a semiconductor device comprising the steps of: forming a silicon oxynitride layer on a semiconductor substrate by a plasma chemical vapor deposition method; selectively etching said silicon oxynitride layer to expose a portion of said semiconductor substrate; oxidizing said portion of said semiconductor substrate to form an oxide layer, and removing the remaining silicon oxynitride layer by an etchant comprising a solution of hydrofluoric acid.
Claim 2
Dependent Claim
69 words
A process for producing a semiconductor device comprising the steps of: forming a silicon oxynitride layer on a semiconductor substrate by a plasma chemical vapor deposition method; selectively etching said silicon oxynitride layer to expose a portion of said semiconductor substrate; oxidizing said portion of said semiconductor substrate to form an oxide layer, and removing the remaining silicon oxynitride layer by an etchant comprising a solution of hydrofluoric acid.
Claim 3
Dependent Claim
22 words
The process recited in claim 1, wherein said plasma chemical vapor deposition method employs monosilane gas, ammonia gas and nitrous oxide gas.
Claim 4
Dependent Claim
17 words
The process recited in claim 1, wherein said selectively etching step comprises photoetching said silicon oxynitride layer.
Claim 5
Dependent Claim
20 words
The process recited in claim 1, wherein said silicon oxynitride layer has a thickness of from 100 to 300 nm.
References Cited (Backward Citations)
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Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-12-13 | 1986-06-14 | 1986-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-12-13 | 1990-06-14 | 1990-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-12-13 | 1994-06-14 | 1994-12-14 | $7700.00 | Window Closed / Lapsed |