US3874919A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Oxidation resistant mask layer and process for producing recessed oxide region in a silicon body
Assignee: International Business Machines Corp
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Filing: 1974-03-13
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Granted: 1975-04-01
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Expires: 1994-03-13
Abstract
Abstract An oxidation resistant masking layer for a semiconductor body having a first layer of oxygenated silicon nitride material having a refractive index in the range of 1.60 to 1.85, and a second overlying layer of Si3N4 bonded to the first layer having a thickness of at least 100 Angstroms. A process for forming recessed thermal SiO2 isolation regions in a silicon semiconductor body wherein a masking layer is deposited on the silicon body by depositing a blanket layer of oxygenated silicon nitride and an overlying blanket layer of Si3N4, forming openings in the resultant composite masking layer and etching grooves into the silicon semiconductor layer to the desired thickness thus defining the desired recessed isolation regions, and exposing the resultant structure to an oxidizing environment for a time sufficient to form the desired silicon oxide recessed regions.
Inventors
- 👤 Herbert S Lehman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:01
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10P14/61; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/69215; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/10; H10W10/13; H10W74/00; H10W74/40; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/085; Y10S148/114; Y10S148/117; Y10T; Y10T428/00; Y10T428/26; Y10T428/261
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
65 words
AN OXIDATION RESISTANT MASKING LAYER FOR A SILICON SEMICONDUCTOR BODY COMPRISED OF A FIRST LAYER OF OXYGENATED SILICON NITRIDE MATERIAL HAVING A REFRACTIVE INDEX IN THE RANGE OF 1.60 TO 1.85 AND A THICKNESS GREATER THAN 50 ANGSTROMS, SAID LAYER CONTIGUOUS WITH SAID BODY, AND AN OVERLYING SECOND LAYER OF SI3N4 BONDED TO SAID FIRST LAYER AND HAVING A THICKNESS OF AT LEAST 100 ANGSTROMS.
Claim 2
Dependent Claim
65 words
AN OXIDATION RESISTANT MASKING LAYER FOR A SILICON SEMICONDUCTOR BODY COMPRISED OF A FIRST LAYER OF OXYGENATED SILICON NITRIDE MATERIAL HAVING A REFRACTIVE INDEX IN THE RANGE OF 1.60 TO 1.85 AND A THICKNESS GREATER THAN 50 ANGSTROMS, SAID LAYER CONTIGUOUS WITH SAID BODY, AND AN OVERLYING SECOND LAYER OF SI3N4 BONDED TO SAID FIRST LAYER AND HAVING A THICKNESS OF AT LEAST 100 ANGSTROMS.
Claim 3
Dependent Claim
82 words
A PROCESS FOR FORMING RECESSED THERMAL SIO2 ISOLATION REGIONS IN A SILICON SEMICONDUCTOR BODY COMPRISING: FORMING ON THE SURFACE OF THE SILICON BODY A BLANKET LAYER OF OXYGENATED SILICON NITRIDE OF A THICKNESS OF AT LEAST 50 ANGSTROMS, DEPOSITING AN OVERLYING BLANKET LAYER OF SI3N4 ON SAID FIRST LAYER, FORMING OPENING IN THE RESULTANT COMPOSITE LAYER THAT DEFINE THE DESIRED RECESSED ISOLATION REGIONS, EXPOSING THE RESULTANT STRUCTURE TO AN OXIDIZING ENVIRONMENT FOR A TIME SUFFICIENT TO FORM THE DESIRED SILICON OXIDE REGIONS.
Claim 4
Dependent Claim
82 words
A PROCESS FOR FORMING RECESSED THERMAL SIO2 ISOLATION REGIONS IN A SILICON SEMICONDUCTOR BODY COMPRISING: FORMING ON THE SURFACE OF THE SILICON BODY A BLANKET LAYER OF OXYGENATED SILICON NITRIDE OF A THICKNESS OF AT LEAST 50 ANGSTROMS, DEPOSITING AN OVERLYING BLANKET LAYER OF SI3N4 ON SAID FIRST LAYER, FORMING OPENING IN THE RESULTANT COMPOSITE LAYER THAT DEFINE THE DESIRED RECESSED ISOLATION REGIONS, EXPOSING THE RESULTANT STRUCTURE TO AN OXIDIZING ENVIRONMENT FOR A TIME SUFFICIENT TO FORM THE DESIRED SILICON OXIDE REGIONS.
Claim 5
Dependent Claim
21 words
The masking layer of claim 1 wherein said first layer of oxygenated silicon nitride has a thickness greater than 100 Angstroms.
Claim 6
Dependent Claim
23 words
The process of claim 3 wherein said blanket layer of oxygenated silicon nitride is formed to a thickness of at least 100 Angstroms.
References Cited (Backward Citations)
US3765935A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-03-31 | 1978-09-30 | 1979-04-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-03-31 | 1982-09-30 | 1983-04-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-03-31 | 1986-09-30 | 1987-04-01 | $7700.00 | Window Closed / Lapsed |