US3765935A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radiation resistant coatings for semiconductor devices
Assignee: AT&T Inc
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Filing: 1971-08-10
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Granted: 1973-10-16
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Expires: 1991-08-10
Abstract
Abstract Radiation insensitive dielectric films are provided on semiconductor devices, both of the bipolar and the insulated gate, field effect type, by depositing silicon oxynitride coatings of particular compositions. The tolerance for ionizing radiation is thereby increased by a factor of about 100 compared to silicon dioxide coatings. The silicon oxynitride dielectric coating prevents both the formation of a space charge in the dielectric, and the formation of interface states at the silicon interface. The initial surface charge of the devices prior to irradiation can be optimized by a chemical treatment of the silicon surface preceding the deposition of the silicon oxynitride film.
Inventors
- 👤 M Rand
- 👤 P Schmidt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:45
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0227; C23C16/22; C23C16/30; C23C16/308; H10P14/65; H10P14/6502; H10P14/6508; H10P14/6516; H10P14/66; H10P14/662; H10P14/69215; H10P95/00; H10W; H10W74/00; H10W74/10; H10W74/131; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/668; H10P14/6681; H10P14/6682; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/113; Y10S148/114; Y10S148/118; Y10S257/00; Y10S257/906; Y10S438/00; Y10S438/91; Y10S438/953; Y10T; Y10T428/00; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
26 words
A semiconductor device in accordance with claim 1 in which said coating has a composition of 20 perCent oxygen, 42 percent nitrogen and 38 percent silicon.
Claim 2
Independent Claim
70 words
The method of providing a radiation resistant coating on a silicon semiconductor device comprising treating a surface of a silicon semiconductor body with an aqueous mixture of hydrogen peroxide and ammonia having a pH in the range of about 8-9 and forming on said surface by pyrolytic deposition a film having a composition in the range of 12-24 percent oxygen, 38-48 percent nitrogen and 37-40 percent silicon by atomic percentage.
Claim 3
Dependent Claim
31 words
The method in accordance with claim 3 in which the formation of said film is followed by a heat treatment in a hydrogen ambient at about 500*C for about three hours.
Claim 4
Dependent Claim
31 words
The method in accordance with claim 3 in which the formation of said film is followed by a heat treatment in a hydrogen ambient at about 900*C for about 15 minutes.
Claim 5
Dependent Claim
36 words
The method in accordance with claim 3 in which the deposition of said film is preceded by the formation by thermal growth of a thin silicon oxide film which does not exceed 40 A in thickness.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-15 | 1977-04-16 | 1977-10-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-15 | 1981-04-16 | 1981-10-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-15 | 1985-04-16 | 1985-10-16 | $7700.00 | Window Closed / Lapsed |