EP0588087B1
Expired / Lapsed
EP
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Method of forming a resist pattern using an optimized anti-reflective layer
Assignee: Sony Corp
•
Filing: 1993-08-18
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Granted: 1999-11-10
•
Expires: 2013-08-18
Abstract
No abstract record available.
Inventors
- 👤 Tohru C/O Sony Corporation Ogawa
- 👤 Tetsuo C/O Sony Corporation Gocho
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:23
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; G03F7/70; G03F7/70691; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/71; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2042; H10P76/2043; H10W; H10W20/00; H10W20/01; H10W20/031
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
264 words
A method of forming a resist pattern comprising the steps of forming an anti-reflective layer on an underlying material, forming a photoresist layer on said anti-reflective layer, exposing said photoresist to monochromatic light, and developing said photoresist, wherein the underlying material is a metallic material or a silicon material or a
metal silicide, characterized in that the reflection refractive index n and the absorption refractive
index k of said anti-reflective layer have a value near the optimal reflection
refractive index and the optimal absorption refractive index, respectively, wherein
said optimal reflection refractive index and said optimal absorption refractive index
are obtainable by a method comprising the steps of (I) determining an equi-contour line for the amount of energy absorption in
a photoresist of an optionally determined film thickness using said reflection refractive
index and said absorption refractive index of said anti-reflective layer as
parameters, (II) determining equi-contour lines for the amount of photoresist absorption
for a plurality of resist film thicknesses in the same manner as in (I) above, (III) finding a common region for the amount of the photoresist absorption
for each of the equi-contour lines obtained in (II) above and setting the refractive
indices defined by the common region as optimal refractive indices for the anti-reflective
layer in the condition defined initially in (I) above. (IV) determining the optical condition for the anti-reflective layer by conducting
the same procedures as described above while changing the thickness of the
anti-reflective layer and (V) finding the optimal refractive indices for the anti-reflective layer for various
thicknesses of the anti-reflective layer according to (IV) above.
Claim 2
Dependent Claim
31 words
The method according to claim 1, wherein the anti-reflective layer is selected
from a group consisting of Si x O y N z, Si x N y and SiO x .
Claim 3
Dependent Claim
77 words
A method of forming a resist pattern according to claim 1 or 2, wherein said
underlying material is W-Si and said anti-reflective layer has a thickness of 50 ±
10 nm, a reflection refractive index n = 3.16 ± 0.2 and an absorption refractive index
k = 0.24 ± 0.1 or a thickness of 30 ± 10 nm, a reflection refractive index n =
2.4 ± 0.6 and an absorption refractive index k = 0.7 ± 0.2.
Claim 4
Dependent Claim
84 words
A method of forming a resist pattern according to claim 1 or 2, wherein said
underlying material is Al, Al-Si, Al-Si-Cu, Cu or a Cu alloy and said anti-reflective
layer has a thickness of 30 ± 10 nm, a reflection refractive index n = 1.83 ± 0.2
and an absorption refractive index k = 0.75 ± 0.2 or a thickness of 20 ± 10 nm, a
reflection refractive index n = 2.3 ± 0.2 and an absorption refractive index k = 0.8
± 0.2.
Claim 5
Dependent Claim
58 words
A method of forming a resist pattern according to claim 1 or 2, wherein said
underlying material is single crystal silicon, polycrystalline silicon, amorphous silicon
or doped polysilicon, said anti-reflective layer has a thickness of 20 to 150
nm, a reflection refractive index n = 1.8 - 2.6 and an absorption refractive index k
= 0.1 - 0.8.
Claim 6
Independent Claim
60 words
The method according to any one of claims 1 to 5, wherein said anti-reflective
layer having said values for said reflection refractive index n and said absorption
refractive index k for a given thickness of said anti-reflective layer is formed
by a parallel plate plasma CVD process or a ECR plasma CVD process or a bias
ECR plasma CVD process.
Claim 7
Dependent Claim
14 words
The method according to claim 6, wherein a microwave at 2.45 GHz is used.
Claim 8
Dependent Claim
47 words
The method according to claim 6 or 7, wherein said anti-reflective layer consists
of Si x O y N z and is formed from a gas mixture of SiH 4 + O 2 + N 2 or a gas
mixture of SiH 4 + N 2 O.
Claim 9
Dependent Claim
54 words
The method according to claim 6 or 7, wherein said anti-reflective layer consists
of Si x N y and is formed from a gas mixture of SiH 4 + NH 3 or a gas mixture
of SiH 2 Cl 2 + NH 3 or a gas mixture of SiH 4 + N 2 .
Claim 10
Dependent Claim
30 words
The method according to claim 6 or 7, wherein said anti-reflective layer consists
of SiO x and is formed from a gas mixture of SiH 4 + O 2 .
Claim 11
Independent Claim
19 words
The method according to any one of claims 8 to 10, wherein Ar is used as a
buffer gas.
Claim 12
Dependent Claim
18 words
The method according to claim 1, wherein the thickness of said anti-reflective
layer is less than 60 nm.
Claim 13
Dependent Claim
33 words
The method according to claim 4 or 5, comprising the additional step of
forming a silicon oxide film on said anti-reflective layer after forming said anti-reflective
layer and before forming said photoresist layer.
Claim 14
Independent Claim
76 words
The method according to any one of claims 1 to 13, comprising the additional
step of etching said anti-reflective layer by using a gas system of CHF 3 and
O 2 or of C 4 F 8 and CHF 3 or of S 2 F 2 under a pressure of about 2 Pa and with a
power of 100 to 1000 W after the step of developing said photoresist, using the
developed photoresist as a mask.
Claim 15
Independent Claim
18 words
The method according to any one of claims 1 to 14, wherein said anti-reflective
layer additionally contains hydrogen.
References Cited (Backward Citations)
No citation records indexed.
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