US5234869A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing silicon nitride film
Assignee: Toshiba Corp
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Filing: 1991-06-26
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Granted: 1993-08-10
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Expires: 2011-06-26
Abstract
Abstract According to this invention, there is disclosed a method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, including the steps of setting a plurality of semiconductor wafers in a boat in a reaction furnace, increasing a temperature in the reaction tube to a predetermined temperature and decreasing a pressure in the reaction tube to a predetermined pressure, and supplying Si(N(CH 3 ) 2 ) 4 gas from a first gas source to the reaction tube and supplying NH 3 gas from a second gas source to the reaction tube.
Inventors
- 👤 Yuuichi Mikata
- 👤 Takahiko Moriya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:49
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; C23C16/345; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6687; H10P14/6689; H10P14/6336; Y; Y10; Y10S; Y10S148/00; Y10S148/114
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
147 words
A method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, comprising the steps of: setting a plurality of semiconductor wafers in a boat of a reaction tube; increasing a temperature in said reaction tube to a specified temperature and decreasing a pressure in said reaction tube to a specified pressure; supplying a first gas selected from the group consisting of Si(N(CH 3 ) 2 ) 4 , SiH(N(CH 3 ) 2 ) 3 , SiH 2 (N(CH 3 ) 2 ) 2 , and siH 3 (N(CH 3 ) 2 ) from a first gas source to said reaction tube and supplying a second gas selected from the group consisting of N 2 and NH 3 from a second gas source to said reaction tube; and producing a plasma from said first and second gases supplied in said reaction tube.
Claim 2
Independent Claim
147 words
A method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, comprising the steps of: setting a plurality of semiconductor wafers in a boat of a reaction tube; increasing a temperature in said reaction tube to a specified temperature and decreasing a pressure in said reaction tube to a specified pressure; supplying a first gas selected from the group consisting of Si(N(CH 3 ) 2 ) 4 , SiH(N(CH 3 ) 2 ) 3 , SiH 2 (N(CH 3 ) 2 ) 2 , and siH 3 (N(CH 3 ) 2 ) from a first gas source to said reaction tube and supplying a second gas selected from the group consisting of N 2 and NH 3 from a second gas source to said reaction tube; and producing a plasma from said first and second gases supplied in said reaction tube.
Claim 3
Independent Claim
148 words
A method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, comprising the steps of: setting a plurality of semiconductor wafers in a boat of a reaction tube; increasing a temperature in the reaction tube to a specified temperature and decreasing a pressure in the reaction tube to a specified pressure; supplying a first gas selected from the group consisting of si(N(CH 3 ) 2 ) 4 , SiH(N(CH 3 ) 2 ) 3 , SiH 2 (N(CH 3 ) 2 ) 2 , and SiH 3 (N(CH 3 ) 2 ) from a first gas source to the reaction tube and supplying a second gas selected from the group consisting of N 2 and NH 3 from a second gas source to the reaction tube; and radiating an ultraviolet beam on the first and second gases supplied in the reaction tube.
Claim 4
Independent Claim
148 words
A method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, comprising the steps of: setting a plurality of semiconductor wafers in a boat of a reaction tube; increasing a temperature in the reaction tube to a specified temperature and decreasing a pressure in the reaction tube to a specified pressure; supplying a first gas selected from the group consisting of si(N(CH 3 ) 2 ) 4 , SiH(N(CH 3 ) 2 ) 3 , SiH 2 (N(CH 3 ) 2 ) 2 , and SiH 3 (N(CH 3 ) 2 ) from a first gas source to the reaction tube and supplying a second gas selected from the group consisting of N 2 and NH 3 from a second gas source to the reaction tube; and radiating an ultraviolet beam on the first and second gases supplied in the reaction tube.
Claim 5
Dependent Claim
52 words
The method according to claim 1, wherein: the specified temperature in the reaction tube is about 300° C.; the specified pressure in the reaction tube is about 0.5 Torr; the flow rate of the first gas is about 100 SCCM; and the flow rate of the second gas is about 1000 SCCM.
Claim 6
Dependent Claim
52 words
The method according to claim 2, wherein: the specified temperature in the reaction tube is about 700° C; the specified pressure in the reaction tube is about 0.5 Torr; the flow rate of the first gas is about 100 SCCM; and the flow rate of the second gas is about 1000 SCCM.
Claim 7
Dependent Claim
32 words
The method according to claim 1, wherein the step of increasing the temperature in the reaction tube to a specified temperature is carried out simultaneously with the step of producing a plasma.
Claim 8
Dependent Claim
33 words
The method according to claim 2, wherein the step of increasing the temperature in the reaction tube to a specified temperature is carried out simultaneously with the step of radiating an ultraviolet beam.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-09 | 1997-02-08 | 1997-08-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-09 | 2001-02-08 | 2001-08-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-09 | 2005-02-08 | 2005-08-10 | $7700.00 | Window Closed / Lapsed |