Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby

Claim 2

A process for forming inorganic dielectric layers on semiconductor substrates which comprises exposing said substrates to a plasma reaction of diethylsilane, C 4 H 12 Si, and a reactive element-containing compound at a predetermined temperature to deposit said dielectric layers which contain said reactive element on the exposed surfaces of said semiconductor substrates.

Claim 3

The process defined in claim 1 wherein said semiconductor substrates are silicon and said reactive element-containing compound is selected from the group consisting of oxygen, O 2 , nitrous oxide, N 2 O, and ammonia, NH 3 , whereby inorganic dielectric layers of silicon dioxide, SiO 2 , or silicon nitride, Si 3 N 4 , are deposited on said silicon substrates with a conformality of 85% or greater.

Claim 4

The process defined in claim 2 wherein said predetermined temperature is in the range of 325° C. through 450° C.

Claim 5

The process defined in claim 3 wherein said diethylsilane, C 12 H 4 Si, is maintained at a source temperature in the range of 25° C. through 35° C.

Claim 6

A process for depositing silicon dioxide or silicon nitride insulating layers on semiconductor substrates which comprises the steps of: a. inserting a semiconductor substrate between reaction electrodes within a plasma reaction chamber, b. introducing diethylsilane, C 4 H 12 Si, and either a selected oxygen-containing or nitrogen-containing compound into said plasma reaction chamber while maintaining said diethylsilane at a source temperature between room temperature of about 25° C. and a temperature of about 35° C., and c. creating a plasma reaction between said diethylsilane and said oxygen-containing or nitrogen-containing compound to thereby deposit either an oxide coating or a nitride coating on a surface of said semiconductor substrate which is exposed to said plasma reaction.

Claim 7

A process for depositing silicon dioxide or silicon nitride insulating layers on semiconductor substrates which comprises the steps of: a. inserting a semiconductor substrate between reaction electrodes within a plasma reaction chamber, b. introducing diethylsilane, C 4 H 12 Si, and either a selected oxygen-containing or nitrogen-containing compound into said plasma reaction chamber while maintaining said diethylsilane at a source temperature between room temperature of about 25° C. and a temperature of about 35° C., and c. creating a plasma reaction between said diethylsilane and said oxygen-containing or nitrogen-containing compound to thereby deposit either an oxide coating or a nitride coating on a surface of said semiconductor substrate which is exposed to said plasma reaction.

Claim 8

The process defined in claim 5 wherein said nitrogen containing compound is ammonia, NH 3 , and said oxygen containing compound is selected from the group consisting of oxygen, O 2 , and nitrous oxide, N 2 O.

Claim 9

The process defined in claim 6 wherein the temperature at the source of said diethylsilane is maintained at a level in the range of between about 25° C. to about 35° C.

Claim 10

The process defined in claim 6 wherein diethylsilane, C 4 H 12 Si, and oxygen, O 2 , are reacted in said plasma reaction chamber at a predetermined temperature to form silicone dioxide, SiO 2 , carbon dioxide CO 2 , and water, H 2 O.

Claim 11

The process defined in claim 6 wherein diethylsilane and N 2 O are reacted in a plasma reaction chamber at a predetermined temperature to form SiO 2 and CO 2 and H 2 O and N 2 .

Claim 12

The process defined in claim 6 wherein diethylsilane and NH 3 are reacted in said plasma reaction chamber at a predetermined temperature to form Si 3 N 4 and carbon compounds.

Claim 13

An integrated circuit having highly conformal layers of either silicon dioxide, SiO 2 , or silicon nitride, Si 3 N 4 , formed on the surface of a silicon substrate, said conformal layers being formed to a conformality in the range of 85%-98% by the process of: a. inserting a silicon substrate between reaction electrodes within a plasma reaction chamber, b. introducing diethylsilane and either a selected oxygen-containing or nitrogen-containing compound into said plasma reaction chamber, said nitrogen containing compound being ammonia, NH 3 , and said oxygen containing compound being selected from the group consisting of oxygen, O 2 , and nitrous oxide, N 2 O, and c. creating a plasma reaction between said diethylsilane and said selected oxygen-containing or nitrogen-containing compound at a predetermined temperature to thereby deposit either an oxide coating or a nitride coating on a surface of said silicon substrate which is exposed to said plasma reaction.

Claim 14

An integrated circuit having highly conformal layers of either silicon dioxide, SiO 2 , or silicon nitride, Si 3 N 4 , formed on the surface of a silicon substrate, said conformal layers being formed to a conformality in the range of 85%-98% by the process of: a. inserting a silicon substrate between reaction electrodes within a plasma reaction chamber, b. introducing diethylsilane and either a selected oxygen-containing or nitrogen-containing compound into said plasma reaction chamber, said nitrogen containing compound being ammonia, NH 3 , and said oxygen containing compound being selected from the group consisting of oxygen, O 2 , and nitrous oxide, N 2 O, and c. creating a plasma reaction between said diethylsilane and said selected oxygen-containing or nitrogen-containing compound at a predetermined temperature to thereby deposit either an oxide coating or a nitride coating on a surface of said silicon substrate which is exposed to said plasma reaction.