US5260600A
Expired / Lapsed
US
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Semiconductor device having protective insulating film
Assignee: Mitsubishi Electric Corp
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Filing: 1991-05-23
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Granted: 1993-11-09
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Expires: 2011-05-23
Abstract
Abstract A semiconductor device having a protective insulating film is disclosed. This semiconductor device includes a semiconductor substrate, and an interconnection pattern provided on said semiconductor substrate and electrically connected with said elements. A silicon-oxy-nitride film is provided on said semiconductor substrate so as to cover said interconnection pattern. The silicon-oxy-nitride film is deposited in accordance with a chemical vapor deposition Method using plasma, using a mixture gas including organic silane and a nitriding gas and has therefore superior step coverage. The silicon-oxy-nitride film has a superior barrier characteristic to moisture coming in from the outside. A semiconductor device superior in reliability such as moisture resistance is thus obtained.
Inventors
- 👤 Shigeru Harada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:19
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6927; H10W72/00; H10W72/90; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/668; H10P14/6681; H10P14/6682; H10P14/694; H10P14/6943; H10P14/69433; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/59; H10W72/931; H10W72/934; H10W72/981; H10W72/983; H10W90/00; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
55 words
A semiconductor device having a protective insulating film, comprising: a semiconductor substrate on which elements are formed; an interconnection pattern provided on said semiconductor substrate and electrically connected with said elements; and a silicon-oxy-nitride film provided on said semiconductor substrate so as to cover said interconnection pattern and including 0.01-0.5 wt % of hydroxyl group.
Claim 2
Dependent Claim
55 words
A semiconductor device having a protective insulating film, comprising: a semiconductor substrate on which elements are formed; an interconnection pattern provided on said semiconductor substrate and electrically connected with said elements; and a silicon-oxy-nitride film provided on said semiconductor substrate so as to cover said interconnection pattern and including 0.01-0.5 wt % of hydroxyl group.
Claim 3
Dependent Claim
40 words
The semiconductor device in accordance with claim 1, further comprising a silicon nitride film provided on said silicon-oxy-nitride film and deposited in accordance with the plasma chemical vapor deposition method using a mixture gas including silane and a nitriding gas.
Claim 4
Dependent Claim
37 words
The semiconductor device in accordance with claim 2, wherein the film thickness of said silicon-oxy-nitride film ranges from 3000 to 10000 Å, and the film thickness of said silicon nitride film ranges from 3000 to 10000 Å.
Claim 5
Dependent Claim
19 words
The semiconductor device in accordance with claim 1, further comprising a second silicon-oxy-nitride film which has no hydroxyl group.
Claim 6
Dependent Claim
37 words
The semiconductor device in accordance with claim 4, wherein said second silicon-oxy-nitride film is deposited in accordance with a plasma chemical vapor deposition method, using a mixture gas including silane, a nitriding gas and an oxidizing gas.
Claim 7
Dependent Claim
19 words
The semiconductor device in accordance with claim 1 further comprising a silicon oxide film provided on said silicon-oxy-nitride film.
Claim 8
Dependent Claim
38 words
The semiconductor device in accordance with claim 6, wherein said silicon oxide film is formed in accordance with a chemical vapor deposition method which uses plasma or heat, using a mixture gas including silane and an oxidizing gas.
Claim 9
Dependent Claim
39 words
The semiconductor device in accordance with claim 6, wherein said silicon oxide film is formed in accordance with a chemical vapor deposition method which uses plasma or heat, using a mixture gas including organic silane and an oxidizing gas.
Claim 10
Dependent Claim
65 words
A semiconductor device having a protective insulating film, comprising: a semiconductor substrate on which elements are formed; an interconnection pattern provided on said semiconductor substrate and electrically connected with said elements; a silicon oxide film provided on said semiconductor substrate so as to cover said interconnection pattern; and a silicon-oxy-nitride film provided on said silicon oxide film and including 0.01-0.5 wt % of hydroxyl group.
Claim 11
Dependent Claim
65 words
A semiconductor device having a protective insulating film, comprising: a semiconductor substrate on which elements are formed; an interconnection pattern provided on said semiconductor substrate and electrically connected with said elements; a silicon oxide film provided on said semiconductor substrate so as to cover said interconnection pattern; and a silicon-oxy-nitride film provided on said silicon oxide film and including 0.01-0.5 wt % of hydroxyl group.
Claim 12
Dependent Claim
31 words
The semiconductor device in accordance with claim 9, wherein said silicon oxide film is formed in accordance with a plasma chemical vapor deposition method using organic silane and an oxidizing gas.
Claim 13
Dependent Claim
67 words
A semiconductor device having a protective insulating film, comprising: a semiconductor substrate on which elements are formed; an interconnection pattern provided on said semiconductor substrate and electrically connected with said elements; a silicon-oxy-nitride film provided on said semiconductor substrate so as to cover said interconnection pattern and including 0.01-0.5 wt % of hydroxyl group; and a buffer coat film provided on said silicon-oxy-nitride film for relaxing stress.
Claim 14
Dependent Claim
67 words
A semiconductor device having a protective insulating film, comprising: a semiconductor substrate on which elements are formed; an interconnection pattern provided on said semiconductor substrate and electrically connected with said elements; a silicon-oxy-nitride film provided on said semiconductor substrate so as to cover said interconnection pattern and including 0.01-0.5 wt % of hydroxyl group; and a buffer coat film provided on said silicon-oxy-nitride film for relaxing stress.
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