Combination glass/low temperature deposited Siw Nx Hy O.sub.z

Claim 1

A semiconductor device having an improved passivating structure, resistant to degradation in the presence of water vapor and corrosive atmospheres comprising: a semiconductor body having a surface and PN junction-defining regions in said body adjacent to said surface, a primary passivating layer of insulating material disposed on said surface, said primary passivating layer free of any layer of silicon nitride (Si 3 N 4 ), a metallic conductor disposed on portions of said primary layer, and a secondary passivating overcoat disposed over exposed portions of said conductor and unmetallized portions of said primary passivating layer, said secondary overcoat including a glass layer and a low-temperature-deposited nitride layer comprising a chemical compound having the formula Si w N x H y O z , wherein w, x, y, and z are integers other than zero, said low-temperature-deposited nitride layer being deposited at a temperature below the eutectic temperature at which said metallic conductor begins to alloy with the semiconductor material.