US3745428A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a composite film as a passivating film
Assignee: Hitachi Ltd
•
Filing: 1971-02-01
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Granted: 1973-07-10
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Expires: 1991-02-01
Abstract
Abstract A semiconductor device having a composite film as a passivating film formed on the surface of the device in the order of films of silicon oxide formed by thermal oxidation, phosphorous glass, silicon oxide formed by chemical vapor deposition and silicon nitride, whereby cracks, which occurs in the film when the phosphorous glass film is in contact with the silicon nitride film, can be eliminated.
Inventors
- 👤 Y Misawa
- 👤 T Ogawa
- 👤 H Yagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:39
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/114
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
27 words
A semiconductor device according to claim 1, wherein the thickness of the first silicon doixide film and the phosphorous film is about 6,000 to about 16,000 angstroms.
Claim 2
Dependent Claim
33 words
A semiconductor device according to claim 1, wherein the thickness of the first silicon dioxide film, the phosphorous glass film and the second silicon dioxide film is about 7,000 to about 18,000 angstroms.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-07-09 | 1977-01-08 | 1977-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-07-09 | 1981-01-08 | 1981-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-07-09 | 1985-01-08 | 1985-07-10 | $7700.00 | Window Closed / Lapsed |