US4097889A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Combination glass/low temperature deposited Siw Nx Hy O.sub.z
Assignee: RCA Corp
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Filing: 1976-11-01
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Granted: 1978-06-27
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Expires: 1996-11-01
Abstract
Abstract A semiconductor device including a body of semiconductor material with a metallic conductor disposed thereon has a combination glass/low-temperature-(typically 300 DEG C) deposited SiwNxHyOz passivating overcoat with improved crack and corrosion resistance. This nitride is formed over the conductor, with the glass over the nitride.
Inventors
- 👤 Werner Kern
- 👤 Chester Edwin Tracy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 19:17
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/114
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
93 words
In a semiconductor device having a metallic conductor disposed on the surface of a body of semiconductor material and a passivating overcoat including a glass layer disposed over said conductor, the improvement comprising said passivating overcoat further including a low-temperature-deposited nitride layer comprising a chemical compound having the formula Si w N x H y O z , wherein w, x, y and z are integers other than zero said nitride layer being deposited at a temperature below the eutectic temperature at which said metallic conductor begins to alloy with said semiconductor material.
Claim 2
Dependent Claim
93 words
In a semiconductor device having a metallic conductor disposed on the surface of a body of semiconductor material and a passivating overcoat including a glass layer disposed over said conductor, the improvement comprising said passivating overcoat further including a low-temperature-deposited nitride layer comprising a chemical compound having the formula Si w N x H y O z , wherein w, x, y and z are integers other than zero said nitride layer being deposited at a temperature below the eutectic temperature at which said metallic conductor begins to alloy with said semiconductor material.
Claim 3
Dependent Claim
25 words
A semiconductor device as defined in claim 1 wherein said nitride layer is disposed adjacent to said conductor between said conductor and said glass layer.
Claim 4
Dependent Claim
16 words
A semiconductor device as defined in claim 1 wherein said nitride layer further includes silicon oxynitride.
Claim 5
Dependent Claim
22 words
A semiconductor device as defined in claim 1 wherein said nitride layer has a thickness of between about 500A and about 15,000A.
Claim 6
Dependent Claim
26 words
A semiconductor device as defined in claim 1 wherein said glass layer is phosphosilicate glass and has a thickness of between about 3,000A and about 30,000A.
Claim 7
Dependent Claim
16 words
A semiconductor device as defined in claim 1 wherein said conductor comprises a layer of aluminum.
Claim 8
Dependent Claim
41 words
A semiconductor device as defined in claim 1 wherein said conductor comprises a first layer of titanium, a second layer of one of platinum and palladium, and a third layer of gold, said gold layer being adjacent to said nitride layer.
References Cited (Backward Citations)
US3422321A
Cited
US3424661A
Cited
US3635774A
Cited
US3607697A
Cited
US4001871A
Cited
US3967310A
Cited
US3745428A
Cited
US3838442A
Cited
US3765935A
Cited
US4001872A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-06-26 | 1981-12-26 | 1982-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-06-26 | 1985-12-26 | 1986-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-06-26 | 1989-12-26 | 1990-06-27 | $7700.00 | Window Closed / Lapsed |