Method of making self-aligned GaAs devices having TiWNx gate/interconnect

Claim 2

In a process for making a field-effect transistor including the heating of a gallium arsenide substrate having ions implanted therein, the improvement comprising the steps of: forming a Schottky gate metallization layer directed on said substrate which layer consists of titanium-tungsten nitride (TiWN X ) and forms a diffusion barrier for said transistor, wherein said gate metallization layer is formed by reactively sputtering a TiW (30 atomic percent Ti) target in a nitrogen/argon plasma having an adjustable flow ratio within the range of 1/10 to 1/1 of nitrogen (N) to nitrogen plus argon (N+Ar) N:(N+Ar) during formation of said layer by reactive sputtering to control the atomic percent of nitrogen in said layer, said process further including the steps of: applying a dielectric encapsulant layer of silicon oxy-nitride (SiON) on said substrate and gate metalization layer and then annealing, and forming contacts on the implanted substrate by removing said encapsulant layer in predetermined areas on the substrate and depositing conductive material in said areas employing a first level conductive interconnect layer of titanium-tungsten nitride (TiWN x ).

Claim 3

The method according to claim 1, wherein said first level conductive interconnect layer is formed by reactively sputtering a TiW target in a nitrogen/argon plasma.

Claim 4

The method according to claim 2, wherein said target includes 30 atomic percent of Ti.

Claim 5

The method according to claim 1, including the further step of depositing a layer of Titanium or Molybdenum over said interconnect layer.

Claim 6

An improved process for the manufacture of a GaAs FET comprising: providing a GaAs n-type channel region in a substrate; forming a TiWN x layer on said substrate to cover said channel region and form a Schottky contact therewith by reactively sputtering a TiW target in a nitrogen/argon plasma having an N:(N+Ar) flow ratio of between about 1:10 and 1:1; applying a layer of photoresist over said TiWN x layer and patterning said photoresist to expose said TiWN x at a gate location over said channel region; forming an etch mask metal layer over said patterned photoresist and exposed TiWN x and employing a photoresist lift-off process to remove said photoresist and overlying portions of said etch mask metal layer to expose portions of said TiWN x layer, said etch mask metal being retained at said gate location; employing a reactive ion etch to remove said exposed portions of said TiWN x layer and to undercut said retained etch mask metal; and introducing additional n-type impurities into said GaAs n-type channel region, employing said retained etch mask metal as an impurity introduction mask, to form source and drain regions laterally spaced from said TiWN x as a function of said undercut of said retained etch mask metal.

Claim 7

An improved process for the manufacture of a GaAs FET comprising: providing a GaAs n-type channel region in a substrate; forming a TiWN x layer on said substrate to cover said channel region and form a Schottky contact therewith by reactively sputtering a TiW target in a nitrogen/argon plasma having an N:(N+Ar) flow ratio of between about 1:10 and 1:1; applying a layer of photoresist over said TiWN x layer and patterning said photoresist to expose said TiWN x at a gate location over said channel region; forming an etch mask metal layer over said patterned photoresist and exposed TiWN x and employing a photoresist lift-off process to remove said photoresist and overlying portions of said etch mask metal layer to expose portions of said TiWN x layer, said etch mask metal being retained at said gate location; employing a reactive ion etch to remove said exposed portions of said TiWN x layer and to undercut said retained etch mask metal; and introducing additional n-type impurities into said GaAs n-type channel region, employing said retained etch mask metal as an impurity introduction mask, to form source and drain regions laterally spaced from said TiWN x as a function of said undercut of said retained etch mask metal.