US5968324A
Expired / Lapsed
US
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Method and apparatus for depositing antireflective coating
Assignee: Applied Materials Inc
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Filing: 1996-06-28
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Granted: 1999-10-19
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Expires: 2016-06-28
Abstract
Abstract A stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that different films can be deposited. The invention also provides conditions under which process parameters can be controlled to produce antireflective layers with varying optimum refractive index, absorptive index, and thickness for obtaining the desired optical behavior.
Inventors
- 👤 David Cheung
- 👤 Joe Feng
- 👤 Judy H. Huang
- 👤 Wai-Fan Yau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:03
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/308; C23C16/34; C23C16/345; C23C16/44; C23C16/52; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/081
Claims Analysis
Total Claims: 42
Claim 1
Independent Claim
121 words
A method for controlling a plasma enhanced process to achieve thickness control in thin film deposition, the method comprising the acts of: flowing selected deposition gases into a substrate processing chamber at deposition gas flow rates; adding a flow of an inert gas to the selected deposition gases at a flow rate previously determined to achieve a desired low deposition rate from a plasma enhanced reaction of the selected deposition gases, said desired low deposition rate being lower than a deposition rate using said selected deposition gases at said deposition gas flow rates with a lower flow rate of said inert gas; and depositing a thin film at said low deposition rate from a plasma enhanced reaction of said deposition gases.
Claim 2
Independent Claim
121 words
A method for controlling a plasma enhanced process to achieve thickness control in thin film deposition, the method comprising the acts of: flowing selected deposition gases into a substrate processing chamber at deposition gas flow rates; adding a flow of an inert gas to the selected deposition gases at a flow rate previously determined to achieve a desired low deposition rate from a plasma enhanced reaction of the selected deposition gases, said desired low deposition rate being lower than a deposition rate using said selected deposition gases at said deposition gas flow rates with a lower flow rate of said inert gas; and depositing a thin film at said low deposition rate from a plasma enhanced reaction of said deposition gases.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein the inert gas comprises helium.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein the selected deposition gases comprise silane and an oxygen source.
Claim 5
Dependent Claim
15 words
The method of claim 1 wherein the selected deposition gases comprise silane and nitrous oxide.
Claim 6
Dependent Claim
16 words
The method of claim 1 wherein the selected deposition gases comprise silane and a nitrogen source.
Claim 7
Dependent Claim
53 words
The method of claim 1 further comprising the act of: maintaining a chamber pressure in the range of 1-6 Torr and wherein said selected deposition gases comprise: SiH 4 flowed into the chamber at a rate of 5-300 sccm; and N 2 O flowed into the chamber at a rate of 5-300 sccm.
Claim 8
Dependent Claim
26 words
The method of claim 6 further comprising the act of heating a substrate disposed in the chamber to a temperature in the range of 200-400° C.
Claim 9
Dependent Claim
31 words
The method of claim 7 further comprising the act of supporting the substrate on a substrate supporter at a distance from a gas distribution system in the range of 200-600 mils.
Claim 10
Dependent Claim
41 words
The method of claim 6 wherein said selected deposition gases further comprise: NH 3 flowed into the chamber at a rate of less than 300 sccm; and N 2 flowed into the chamber at a rate of less than 4000 sccm.
Claim 11
Dependent Claim
41 words
The method of claim 1 wherein said deposited thin film is an antireflective layer deposited over a substrate disposed in the chamber and wherein the method further comprises the act of: forming a layer of additional material on the antireflective layer.
Claim 12
Dependent Claim
98 words
The method of claim 10 wherein the antireflective layer comprises a film which, at a given exposure wavelength, will have a first reflection of an exposure light from a first interface between the additional material and the antireflective layer, and a second reflection of an exposure light from a second interface between the antireflective layer and material over which said antireflective layer is deposited, the second reflection being an odd number which is at least 3 multiplied by 180° out of phase with the first reflection, whereby the first and second reflections at least partially cancel each other.
Claim 13
Dependent Claim
11 words
The method of claim 11 wherein the additional material comprises photoresist.
Claim 14
Dependent Claim
27 words
The method of claim 12 wherein the antireflective layer has a refractive index in the range of 2.1-2.4, and an absorptive index in the range of 0.2-0.5.
Claim 15
Dependent Claim
15 words
The method of claim 10 wherein the antireflective layer has a thickness between 500-1000 angstroms.
Claim 16
Dependent Claim
22 words
The method of claim 6 wherein said inert gas comprises helium and wherein said determined flow rate is greater than 1500 sccm.
Claim 17
Dependent Claim
22 words
The method of claim 9 wherein said inert gas comprises helium and wherein said determined flow rate is greater than 1500 sccm.
Claim 18
Dependent Claim
50 words
The method of claim 1 wherein said deposition gases comprise SiH 4 and N 2 O, wherein said inert gas comprises He and wherein a ratio of a flow rate of said He to a combined flow rate of said SiH 4 and N 2 O is at least 6.25:1.
Claim 19
Dependent Claim
172 words
A process for depositing an antireflective layer on a substrate in a semiconductor processing chamber comprising the acts of: flowing He into the processing chamber at a selected flow rate to provide a chamber pressure in the range of 1-6 Torr; connecting the chamber to an RF power supply to receive 50-500 Watts; supporting the substrate within the chamber; heating the substrate to a temperature in the range of 200-400° C.; flowing SiH 4 trough a gas distribution system at a flow rate of 5-300 sccm; and flowing N 2 O through the gas distribution system at a flow rate of 5-300 sccm, wherein a ratio of the selected flow rate of He to the combined flow rate of SiH 4 and N 2 O is at least 6.25:1 to deposit an antireflective layer on the substrate at a deposition rate which is lower than a deposition rate using the same flow rate of SiH 4 and the same flow rate of N 2 O with a lower flow rate of He.
Claim 20
Dependent Claim
172 words
A process for depositing an antireflective layer on a substrate in a semiconductor processing chamber comprising the acts of: flowing He into the processing chamber at a selected flow rate to provide a chamber pressure in the range of 1-6 Torr; connecting the chamber to an RF power supply to receive 50-500 Watts; supporting the substrate within the chamber; heating the substrate to a temperature in the range of 200-400° C.; flowing SiH 4 trough a gas distribution system at a flow rate of 5-300 sccm; and flowing N 2 O through the gas distribution system at a flow rate of 5-300 sccm, wherein a ratio of the selected flow rate of He to the combined flow rate of SiH 4 and N 2 O is at least 6.25:1 to deposit an antireflective layer on the substrate at a deposition rate which is lower than a deposition rate using the same flow rate of SiH 4 and the same flow rate of N 2 O with a lower flow rate of He.
Claim 21
Dependent Claim
22 words
The process of claim 18 further comprising the step of introducing NH 3 into the chamber at a rate of 0-300 sccm.
Claim 22
Dependent Claim
22 words
The process of claim 19 further comprising the step of introducing N 2 into the chamber at a rate of 0-4000 sccm.
Claim 23
Dependent Claim
45 words
The process of claim 18 wherein the selected flow rate of He is at least 1500 sccm and wherein said flow rate of SiH 4 is between 40 and 120 sccm and said flow rate of N 2 O is between 30 and 120 sccm.
Claim 24
Dependent Claim
60 words
The process of claim 18, wherein the antireflective layer has a refractive index, an absorptive index, a thickness, and a reflectance, the process farther comprising the step of increasing the rate at which the NH 3 is introduced into the chamber to cause the refractive index and the thickness to increase, and the absorptive index and the reflectance to decrease.
Claim 25
Dependent Claim
59 words
The process of claim 18, wherein the antireflective layer has a refractive index, an absorptive index, a thickness, and a reflectance, the process further comprising the step of increasing the rate at which the N 2 is introduced into the chamber to cause the refractive index, the absorptive index, and the reflectance to decrease, and the thickness to increase.
Claim 26
Dependent Claim
58 words
The process of claim 18, wherein the antireflective layer has a refractive index, an absorptive index, a thickness, and a reflectance, the process further comprising the step of increasing the rate at which the He is introduced into the chamber to cause the refractive index, the absorptive index, and the reflectance to increase, and the thickness to decrease.
Claim 27
Dependent Claim
46 words
The process of claim 18, wherein the antireflective layer has a refractive index, an absorptive index, a thickness, and a reflectance, the process further comprising the step of increasing the temperature to cause the refractive index, the absorptive index, the thickness, and the reflectance to increase.
Claim 28
Dependent Claim
47 words
The process of claim 18, wherein the antireflective layer has a refractive index, an absorptive index, a thickness, and a reflectance, the process further comprising the step of increasing the chamber pressure to cause the refractive index, the absorptive index, the thickness, and the reflectance to decrease.
Claim 29
Dependent Claim
53 words
The process of claim 18, wherein the antireflective layer has a refractive index, an absorptive index, a thickness, and a reflectance, the process further comprising the step of increasing the power supplied to the chamber to cause the refractive index, the absorptive index, and the reflectance to decrease, and the thickness to increase.
Claim 30
Dependent Claim
54 words
The process of claim 18, wherein the antireflective layer has a refractive index, an absorptive index, a thickness, and a reflectance, the process further comprising the step of increasing the distance between the supporter and the gas distribution system to cause the refractive index, the absorptive index, the thickness, and the reflectance to decrease.
Claim 31
Dependent Claim
55 words
The process of claim 18, wherein the antireflective layer has a refractive index, an absorptive index, a thickness, and a reflectance, the process further comprising the step of increasing the rate at which SiH 4 is introduced into the chamber to cause the refractive index, the absorptive index, the thickness, and the reflectance to increase.
Claim 32
Dependent Claim
59 words
The process of claim 18, wherein the antireflective layer has a refractive index, an absorptive index, a thickness, and a reflectance, the process further comprising the step of increasing the rate at which N 2 O is introduced into the chamber to cause the refractive index, the absorptive index, and the reflectance to decrease, and the thickness to increase.
Claim 33
Independent Claim
180 words
A method of forming a photoresist pattern, the method comprising the steps of: forming an antireflective layer over a layer on a substrate by flowing selected deposition gases into a substrate processing chamber at deposition gas flow rates and adding a flow of an inert gas to the selected deposition gases to deposit the antireflective layer at a desired deposition rate which is lower than a deposition rate using the selected deposition gases at the deposition gas flow rates with a lower flow rate of the inert gas; forming a layer of photoresist on the antireflective layer, the antireflective layer having a thickness and refractive indices such flat a first reflection from an interface between the photoresist and the antireflective layer of an exposure light will be an odd number which is at least 3 multiplied by 180° out of phase with a second reflection from an interface between the antireflective layer and the substrate layer of the exposure light; and forming the photoresist pattern by exposing the photoresist layer to the exposure light and developing the exposed photoresist layer.
Claim 34
Independent Claim
180 words
A method of forming a photoresist pattern, the method comprising the steps of: forming an antireflective layer over a layer on a substrate by flowing selected deposition gases into a substrate processing chamber at deposition gas flow rates and adding a flow of an inert gas to the selected deposition gases to deposit the antireflective layer at a desired deposition rate which is lower than a deposition rate using the selected deposition gases at the deposition gas flow rates with a lower flow rate of the inert gas; forming a layer of photoresist on the antireflective layer, the antireflective layer having a thickness and refractive indices such flat a first reflection from an interface between the photoresist and the antireflective layer of an exposure light will be an odd number which is at least 3 multiplied by 180° out of phase with a second reflection from an interface between the antireflective layer and the substrate layer of the exposure light; and forming the photoresist pattern by exposing the photoresist layer to the exposure light and developing the exposed photoresist layer.
Claim 35
Dependent Claim
51 words
The method of claim 31 wherein: the substrate layer comprises Al; the exposure light has a wavelength of about 248 nm; and the antireflective film has a refractive index in the range of 2.1-2.4, an absorptive index in the range of 0.2-0.5, and a thickness in the range of 500-1000 angstroms.
Claim 36
Dependent Claim
18 words
The method of claim 32 wherein the substrate layer further comprises at least one of Si and Cu.
Claim 37
Dependent Claim
22 words
The method of claim 31 wherein the exposure light is a monochromatic light having a wavelength in the range of 190-900 nm.
Claim 38
Dependent Claim
11 words
The method of claim 31 wherein said odd number is 3.
Claim 39
Independent Claim
232 words
A method of forming a photoresist pattern, the method comprising the steps of: forming an SiON antireflective layer over a first layer on a substrate by flowing selected deposition gases into a substrate processing chamber at deposition gas flow rates and adding a flow of an inert gas to the selected deposition gases to deposit the SiON antireflective layer at a desired deposition rate which is lower than a deposition rate using the selected deposition gases at the deposition gas flow rates with a lower flow rate of the inert gas, said antireflective layer having a refractive index in the range of 1.7-2.9, an absorptive index in the range of 0-1.3, and a thickness in the range of 200-3000 angstroms; forming a layer of photoresist over the antireflective layer; and forming the photoresist pattern by exposing the photoresist layer to an exposure light having a wavelength of 365 nm or less and developing the exposed photoresist layer, wherein a phase shift of an odd multiple of at least 3 multiplied by 180° exists between a first reflection of the exposure light from an interface between the photoresist layer and the antireflective layer and a second reflection of the exposure light from an interface between the antireflective layer and the first layer, the first reflection having almost the same intensity as the second reflection to thereby substantially cancel the first and second reflections.
Claim 40
Independent Claim
232 words
A method of forming a photoresist pattern, the method comprising the steps of: forming an SiON antireflective layer over a first layer on a substrate by flowing selected deposition gases into a substrate processing chamber at deposition gas flow rates and adding a flow of an inert gas to the selected deposition gases to deposit the SiON antireflective layer at a desired deposition rate which is lower than a deposition rate using the selected deposition gases at the deposition gas flow rates with a lower flow rate of the inert gas, said antireflective layer having a refractive index in the range of 1.7-2.9, an absorptive index in the range of 0-1.3, and a thickness in the range of 200-3000 angstroms; forming a layer of photoresist over the antireflective layer; and forming the photoresist pattern by exposing the photoresist layer to an exposure light having a wavelength of 365 nm or less and developing the exposed photoresist layer, wherein a phase shift of an odd multiple of at least 3 multiplied by 180° exists between a first reflection of the exposure light from an interface between the photoresist layer and the antireflective layer and a second reflection of the exposure light from an interface between the antireflective layer and the first layer, the first reflection having almost the same intensity as the second reflection to thereby substantially cancel the first and second reflections.
Claim 41
Independent Claim
114 words
A method of depositing a thin film at a selected low deposition rate, said method comprising the acts of; flowing selected deposition gases into a substrate processing chamber at deposition gas flow rates; adding a flow of all inert gas to the selected deposition gases at a flow rate previously determined to achieve a desired low deposition rate from a reaction of the selected deposition gases, said desired low deposition rate being lower than a deposition rate using said selected deposition gases at said deposition gas flow rates with a lower flow rate of said inert gas; and depositing a thin film at said low deposition rate from said reaction of said deposition gases.
Claim 42
Independent Claim
114 words
A method of depositing a thin film at a selected low deposition rate, said method comprising the acts of; flowing selected deposition gases into a substrate processing chamber at deposition gas flow rates; adding a flow of all inert gas to the selected deposition gases at a flow rate previously determined to achieve a desired low deposition rate from a reaction of the selected deposition gases, said desired low deposition rate being lower than a deposition rate using said selected deposition gases at said deposition gas flow rates with a lower flow rate of said inert gas; and depositing a thin film at said low deposition rate from said reaction of said deposition gases.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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