US3990100A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having an antireflective coating
Assignee: Sony Corp
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Filing: 1975-10-02
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Granted: 1976-11-02
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Expires: 1995-10-02
Abstract
Abstract A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector, the polycrystalline silicon layer containing from 25 to 45 atomic percent of oxygen and having a refractive index intermediate that of the semiconductor crystal and the exterior environment.
Inventors
- 👤 Takayoshi Mamine
- 👤 Takeshi Matsushita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 18:41
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F77/306; H10F77/311; H10F77/315; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/546
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
37 words
A photo sensitive semiconductor device comprising a semiconductor crystal substrate and an antireflective coating on said substrate, said antireflective coating including a polycrystalline silicon layer containing oxygen in an amount of from 25 to 45 atomic percent.
Claim 2
Dependent Claim
37 words
A photo sensitive semiconductor device comprising a semiconductor crystal substrate and an antireflective coating on said substrate, said antireflective coating including a polycrystalline silicon layer containing oxygen in an amount of from 25 to 45 atomic percent.
Claim 3
Dependent Claim
14 words
A device according to claim 1 in which said substrate is composed of silicon.
Claim 4
Dependent Claim
24 words
A device according to claim 1 in which the thickness of said polycrystalline silicon layer is in the range from 600 to 1,000 Angstroms.
Claim 5
Dependent Claim
19 words
A device according to claim 1 in which a silicon dioxide layer is formed over said polycrystalline silicon layer.
Claim 6
Dependent Claim
19 words
A device according to claim 1 which includes an epoxy resin coating over at least said polycrystalline silicon layer.
Claim 7
Dependent Claim
26 words
A device according to claim 1 which includes at least one P-N junction in said substrate, and means for applying a forward bias to said junction.
Claim 8
Dependent Claim
26 words
A device according to claim 1 which includes at least one P-N junction in said substrate, and means for applying a reverse bias to said junction.
Claim 9
Dependent Claim
40 words
A semiconductor solar cell comprising a silicon substrate having at least one P-N junction therein and a polycrystalline silicon layer formed on said substrate, said polycrystalline silicon layer containing oxygen in an amount of from 25 to 45 atomic percent.
Claim 10
Dependent Claim
40 words
A semiconductor solar cell comprising a silicon substrate having at least one P-N junction therein and a polycrystalline silicon layer formed on said substrate, said polycrystalline silicon layer containing oxygen in an amount of from 25 to 45 atomic percent.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-11-02 | 1980-05-03 | 1980-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-11-02 | 1984-05-03 | 1984-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-11-02 | 1988-05-03 | 1988-11-02 | $7700.00 | Window Closed / Lapsed |