Method of determining optimum optical conditions for an anti-reflective layer used in a method of forming a resist pattern

Claim 1

In a method of forming a resist pattern by forming an anti-reflective layer on an underlying metalic material and forming a photoresist on said anti-reflective layer, thereby forming a resist pattern, wherein the anti-reflective layer is formed by an organic or inorgaic substance under the conditions of the film thickness and the optimum refractive indices determined by the following means, which comprises: (I) determining an equi-contour line for the amount of photoresist absorption to a photoresist of an optionally determined film thickness using the optical condition for the anti-reflective layer as a parameter, (II) determining equi-contour lines for the amount of photoresist absorption for a plurality of resist film thicknesses in the same manner as in (I) above, (III) finding a common region for the amount of the photoresist absorption for each of the equi-contour lines obtained in (II) above and setting the optical condition defined by the common region as an optimum optical condition for the anti-reflective layer in the condition defined initially in (I) above, (IV) determining the optical condition for the anti-reflective layer by conducting the same procedures as described above while changing the condition for the anti-reflective layer and (V) finding the optimum optical condition for the anti-reflective layer in a condition for the anti-reflective layer according to (IV) above, wherein an anti-reflective layer is formed on an underlying metalic material by using an organic or inorganic substance having a value within ±0.6 for the reflection refractive index n and a value within ± for the absorption refractive index k wherein the reflection refractive index n and the absorption refractive index k are determined according to (V) above, and forming a photoresist on said anti-reflective layer, thereby forming the resist pattern.

Claim 2

A method of forming a resist pattern, where in an SiO x film having reflection refractive index n = 2.4 ± 0.6 and absorptive refractive index k = 0.7 ± 0.2 is used as an anti-reflective layer on an underlying metalic material.

Claim 4

A method of forming a resist pattern, wherein a Si x O y N z film or a Si x N y film having reflection refractive index n = 2.4 ± 0.6 and absorption refractive index k = 0.7 ± 0.2 is used as an anti-reflective layer on the underlying metalic material.

Claim 5

A method of forming a resist pattern, as defined in clams 1, wherein the underlying metalic material comprises a refractory metal silicide.

Claim 6

A method of forming a resist pattern as defined in claims 2, wherein the underlying metalic material comprises a refractory metal silicide.

Claim 7

A method of forming a resist pattern as defined in claims 3, wherein the underlying metalic material comprises a refractory metal silicide.

Claim 9

A method of forming a resist pattern, in which a Si x O y N z film is formed as an anti-refrective layer on the underlying metalic material thereby forming a resist pattern.

Claim 11

A method of forming a resist pattern in which a Si x O y N z or Si x N y film as an anti-reflective layer is formed on an underlying silicic series material, thereby forming a resist pattern.

Claim 22

A method of forming a resist pattern in which an anti-reflective layer is formed by anyone of silicon oxide nitride containig hydrogen, silicon oxide containing hydrogen, silicon nitride containing hydrogen, or silicon carbide containing hydrogen, and at least one resist layer is formed on the anti-reflevtive layer.

Claim 23

A method of forming resist pattern, wherein SiO x N y H z film, in which x is 0.30 to 0.80, y is 0.10 to 0.30, z is 0 to 0.60, is formed as an anti-reflective layer on underlying refractory metal silicide for exposure wavelengths from 150 to 450 nm, and at least one resist layer is formed on the anti-reflevtive layer.

Claim 24

A method of forming resist pattern, wherein SiO x N y H z film, in which x is 0.30 to 0.80, y is 0.10 to 0.30, z is 0,20 to 0. 60, is formed as an anti-reflective layer on underlying refractory metal silicide for exposure wavelengths from 150 to 450 nm, and at least one resist layer is formed on the anti-reflevtive layer.

Claim 27

A method of forming resist pattern, wherein SiO x N y H z film, in which x is 0.30 to 0.70, y is 0.05 to 0.30, z is 0 to 0.50, is formed as an anti-reflective layer on underlying metalic material for exposure wavelengths from 150 to 450 nm, and at least one photoresist layer is formed on the anti-reflevtive layer.

Claim 28

A method of forming a resist pattern, wherein SiO x N y H z film, in which x is 0.30 to 0.70, y is 0.05 to 0.30, z is 0,1 to 0.50, is formed as an anti-reflective layer on underlying metalic material for exposure wave lengths from 150 to 450 nm and at least one resist layer is formed on the anti-reflevtive layer.

Claim 29

A method of forming resist pattern as defined in claims 27, wherein the metalic material is anyone of an aluminum and aluminum alloys.

Claim 33

A method of forming film by vapor phase deposition using as a raw gas containing at least silicon element and oxide element, wherein the ratio of silicon element to oxide element is as follows. 0.4 ≦ [Si]/[O] ≦ 3

Claim 34

A method of forming film as defined in claims 32, weherein the gas contains a material having at least hydrogen elemnt.

Claim 35

A method of forming film by vapor phase deposition using SiH₄ and N₂O as raw gas wherein the gas ratio of said SiH₄ and N₂O is as follows. 0.4 ≦ [SiH₄]/[N₂O] ≦ 3