US5068124A
Expired / Lapsed
US
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Method for depositing high quality silicon dioxide by pecvd
Assignee: International Business Machines Corp
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Filing: 1989-11-17
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Granted: 1991-11-26
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Expires: 2009-11-17
Abstract
Abstract A method for depositing high quality silicon dioxide in a plasma enhanced chemical vapor deposition tool is described. The reactant gases are introduced into the tool together with a large amount of an inert carrier gas. A plasma discharge is established in tool by using a high RF power density thereby depositing high quality silicon dioxide at very high deposition rates. In a single wafer tool, the RF power density is in the range of 1-4 W/cm 2 and the deposition rate is from 600-1500 angstroms per minute for depositing high quality SiO 2 films.
Inventors
- 👤 John Batey
- 👤 Elaine Tierney
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:29
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/402
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
119 words
A method for depositing high quality silicon dioxide on a substrate in a plasma-enhanced chemical vapor deposition tool, comprising the steps of: (a) introducing an oxygen containing reactant gas and a silicon containing reactant gas into said tool, said silicon containing reactant gas being diluted in an inert carrier gas, the flow rate of said diluted silicon containing carrier gas being 200 sccm or greater; (b) introducing a flow of said inert carrier gas at a flow rate of 1000 sccm or greater into said tool; and (c) establishing a plasma discharge in said tool by applying RF power density of about 1 W/cm 2 or greater, thereby depositing a layer of high quality silicon dioxide on said substrate.
Claim 2
Independent Claim
119 words
A method for depositing high quality silicon dioxide on a substrate in a plasma-enhanced chemical vapor deposition tool, comprising the steps of: (a) introducing an oxygen containing reactant gas and a silicon containing reactant gas into said tool, said silicon containing reactant gas being diluted in an inert carrier gas, the flow rate of said diluted silicon containing carrier gas being 200 sccm or greater; (b) introducing a flow of said inert carrier gas at a flow rate of 1000 sccm or greater into said tool; and (c) establishing a plasma discharge in said tool by applying RF power density of about 1 W/cm 2 or greater, thereby depositing a layer of high quality silicon dioxide on said substrate.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein said oxygen reactant gas is N 2 O said silicon reactant gas SiH 4 .
Claim 4
Dependent Claim
22 words
The method of claim 1 or 2 wherein said carrier gas is selected from the group consisting of He, Ar, Ne, Xe.
Claim 5
Dependent Claim
15 words
The method of claim 2 wherein the carrier gas flow is 2000 sccm or greater.
Claim 6
Dependent Claim
11 words
The method of claim 4 wherein the carrier gas is He.
Claim 7
Dependent Claim
34 words
The method of claim 1 wherein the pressure is in the range of 5 Torr or less and the temperature is in the range of about 250° C. to 600° C., in said tool.
Claim 8
Dependent Claim
26 words
The method of claim 5 wherein the ratio of N 2 O to SiH 4 in He is in the range of about 280/200 to 560/400.
Claim 9
Dependent Claim
24 words
The method of claim 7 wherein the RF power density is in the range of about 1 W/cm 2 to 4 W/cm 2 .
Claim 10
Dependent Claim
21 words
The method of claim 1 wherein the silicon dioxide is deposited at a rate of 600 angstroms per minute or greater.
Claim 11
Dependent Claim
16 words
The method of claim 9 wherein the deposition rate is 1000 angstroms per minute or greater.
Claim 12
Dependent Claim
12 words
The method of claim 1 wherein said substrate is a semiconductor material.
Claim 13
Dependent Claim
10 words
The method of claim 11 wherein said substrate is silicon.
Claim 14
Dependent Claim
11 words
The method of claim 1 wherein said substrate is a metal.
Claim 15
Dependent Claim
11 words
The method of claim 1 wherein said substrate is a glass.
Claim 16
Independent Claim
144 words
A method for depositing a layer of high quality SiO 2 on a substrate in a single wafer PECVD tool comprising the steps of: (a) introducing gaseous SiH 4 in He and gaseous N 2 O in said tool at a flow rate ratio of N 2 O to SiH 4 in He in the range of about 280/200 to 560/400; (b) introducing gaseous He into said tool at a flow rate in the range of about 2000 sccm; (c) establishing a plasma discharge in said tool at a pressure in the range of 5 Torr or less and at a temperature in the range of about 250° C. to 600° C., by applying RF power at a density in the range of about 1 W/cm 2 to 4 W/cm 2 , thereby depositing a layer of high quality SiO 2 on said substrate.
Claim 17
Independent Claim
144 words
A method for depositing a layer of high quality SiO 2 on a substrate in a single wafer PECVD tool comprising the steps of: (a) introducing gaseous SiH 4 in He and gaseous N 2 O in said tool at a flow rate ratio of N 2 O to SiH 4 in He in the range of about 280/200 to 560/400; (b) introducing gaseous He into said tool at a flow rate in the range of about 2000 sccm; (c) establishing a plasma discharge in said tool at a pressure in the range of 5 Torr or less and at a temperature in the range of about 250° C. to 600° C., by applying RF power at a density in the range of about 1 W/cm 2 to 4 W/cm 2 , thereby depositing a layer of high quality SiO 2 on said substrate.
Claim 18
Dependent Claim
29 words
The method of claim 15 wherein the SiO 2 layer is deposited at a rate in the range of about 600 angstroms per minute to 1500 angstroms per minute.
Claim 19
Dependent Claim
12 words
The method of claim 16 wherein said substrate is a semiconductor material.
Claim 20
Dependent Claim
10 words
The method of claim 16 wherein said substrate is silicon.
Claim 21
Dependent Claim
11 words
The method of claim 16 wherein said substrate is a metal.
Claim 22
Dependent Claim
11 words
The method of claim 16 where said substrate is a glass.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-25 | 1995-05-27 | 1995-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-25 | 1999-05-27 | 1999-11-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-25 | 2003-05-27 | 2003-11-26 | $7700.00 | Window Closed / Lapsed |