US4992299A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Deposition of silicon nitride films from azidosilane sources
Assignee: Versum Materials US LLC
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Filing: 1990-02-01
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Granted: 1991-02-12
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Expires: 2010-02-01
Abstract
Abstract A method of producing a silicon nitride film on the surface of a substrate by thermal decomposition at said surface of a compound of the class ##STR1## wherein R 1 R 2 and R 3 are hydrogen azido, 1 to 6 carbon alkyl, phenyl, or 7 to 10 carbon alkaryl, at least one of R 1 , R 2 , and R 3 being 1-6 carbon alkyl, phenyl, or 7 to 10 carbon alkaryl, ethyltriazidosilane being uniquely superior, is disclosed.
Inventors
- 👤 Arthur K. Hochberg
- 👤 David L. O'Meara
- 👤 David A. Roberts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/345; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
110 words
A method of producing a silicon nitride film on the surface of a substrate comprising the steps of heating the substrate surface to a temperature of from about 400° C. to about 600° C. in an oxygen-free environment in which the pressure is from about 0.1 torr to about atmospheric and introducing into said reactor a compound of the class ##STR4## wherein R 1 , R 2 , and R 3 are hydrogen, azido, 1 to 6 carbon alkyl, phenyl, or 7 to 10 carbon aralkyl, at least one of R 1 , R 2 , and R 3 being 1-6 carbon alkyl, phenyl, or 7 to 10 carbon aralkyl.
Claim 2
Independent Claim
110 words
A method of producing a silicon nitride film on the surface of a substrate comprising the steps of heating the substrate surface to a temperature of from about 400° C. to about 600° C. in an oxygen-free environment in which the pressure is from about 0.1 torr to about atmospheric and introducing into said reactor a compound of the class ##STR4## wherein R 1 , R 2 , and R 3 are hydrogen, azido, 1 to 6 carbon alkyl, phenyl, or 7 to 10 carbon aralkyl, at least one of R 1 , R 2 , and R 3 being 1-6 carbon alkyl, phenyl, or 7 to 10 carbon aralkyl.
Claim 3
Dependent Claim
37 words
The method of claim 1 wherein the compound is of the class introducing into said reactor a compound of said class wherein R 1 , R 2 , and R 3 are 1 to 6 carbon alkyl.
Claim 4
Dependent Claim
10 words
The method of claim 1 wherein the compound is ethyltriazidosilane.
Claim 5
Dependent Claim
10 words
The method of claim 1 wherein the compound is diethyldiazidosilane.
Claim 6
Dependent Claim
10 words
The method of claim 1 wherein the compound is triethylazidosilane.
Claim 7
Dependent Claim
10 words
The method of claim 1 wherein the compound is tert-butyltriazidosilane.
Claim 8
Dependent Claim
33 words
The method of claim 1 wherein the pressure in the reactor is maintained at less than atmospheric pressure and further comprising inducing decomposition of the azidosilane compound by ion, electron, or laser energy.
Claim 9
Dependent Claim
37 words
The method of claim 7 wherein the compound is of the class introducing into said reactor a compound of said class wherein R 1 , R 2 , and R 3 are 1 to 6 carbon alkyl.
Claim 10
Dependent Claim
10 words
The method of claim 7 wherein the compound is ethyltriazidosilane.
Claim 11
Dependent Claim
10 words
The method of claim 7 wherein the compound is diethyldiazidosilane.
Claim 12
Dependent Claim
10 words
The method of claim 7 wherein the compound is triethylazidosilane.
Claim 13
Dependent Claim
10 words
The method of claim 7 wherein the compound is tert-butyltriazidosilane.
Claim 14
Dependent Claim
45 words
The method of claim 1 wherein the pressure in the reactor is maintained at less than atmospheric pressure and further comprising inducing decomposition of the azidosilane compound by plasma inducing energy and introducing hydrogen into the reactor to eliminate incorporation of carbon in the films.
Claim 15
Dependent Claim
37 words
The method of claim 13 wherein the compound is of the class introducing into said reactor a compound of said class wherein R 1 , R 2 , and R 3 are 1 to 6 carbon alkyl.
Claim 16
Dependent Claim
10 words
The method of claim 13 wherein the compound is ethyltriazidosilane.
Claim 17
Dependent Claim
10 words
The method of claim 13 wherein the compound is diethyldiazidosilane.
Claim 18
Dependent Claim
10 words
The method of claim 13 wherein the compound is triethylazidosilane.
Claim 19
Dependent Claim
10 words
The method of claim 13 wherein the compound is tert-butyltriazidosilane.
Claim 20
Independent Claim
112 words
A method of producing silicon nitride films on the surface of a substrate carrying the steps of heating the substrate surface to a temperature of from about 400° C. to about 600° C. in an oxygen-free environment in which the pressure in from about 0.1 torr to about 1 torr and introducing into said reactor a compound of the class ##STR5## wherein R 1 , R 2 , and R 3 are hydrogen, azido, 1 to 6 carbon alkyl, phenyl, or 7 to 10 carbon aralkyl, at least one of R 1 , R 2 , and R 3 being 1 to 6 carbon alkyl, phenyl, or 7 to 10 carbon aralkyl.
Claim 21
Independent Claim
112 words
A method of producing silicon nitride films on the surface of a substrate carrying the steps of heating the substrate surface to a temperature of from about 400° C. to about 600° C. in an oxygen-free environment in which the pressure in from about 0.1 torr to about 1 torr and introducing into said reactor a compound of the class ##STR5## wherein R 1 , R 2 , and R 3 are hydrogen, azido, 1 to 6 carbon alkyl, phenyl, or 7 to 10 carbon aralkyl, at least one of R 1 , R 2 , and R 3 being 1 to 6 carbon alkyl, phenyl, or 7 to 10 carbon aralkyl.
Claim 22
Dependent Claim
37 words
The method of claim 19 wherein the compound is of the class introducing into said reactor a compound of said class wherein R 1 , R 2 , and R 3 are 1 to 6 carbon alkyl.
Claim 23
Dependent Claim
10 words
The method of claim 19 wherein the compound is ethyltriazidosilane.
Claim 24
Dependent Claim
10 words
The method of claim 19 wherein the compound is diethyldiazidosilane.
Claim 25
Dependent Claim
10 words
The method of claim 19 wherein the compound is triethylazidosilane.
Claim 26
Dependent Claim
10 words
The method of claim 19 wherein the compound is tert-butyltriazidosilane.
References Cited (Backward Citations)
US4863755A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-02-11 | 1994-08-13 | 1995-02-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-11 | 1998-08-13 | 1999-02-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-11 | 2002-08-13 | 2003-02-12 | $7700.00 | Window Closed / Lapsed |